SI7983DP-T1-E3

Si7983DP Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.017 at VGS = - 4.5 V - 12 0.020 at VGS = - 2.5 V - 11 0.024 at VGS = - 1.8 V - 10.1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile APPLICATIONS • Load Switch PowerPAK SO-8 S1 6.15 mm 5.15 mm 1 S1 G1 2 S2 S2 3 G2 4 G1 D1 8 G2 D1 7 D2 6 D2 5 Bottom View Ordering Information: Si7983DP-T1-E3 (Lead (Pb)-free) Si7983DP-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Symbol VDS VGS TA = 25 °C TA = 70 °C IDM IS Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa ID TA = 25 °C TA = 70 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b, c 10 s - 12 - 9.6 - 2.9 3.5 2.2 Steady State - 20 ±8 - 7.7 - 6.2 - 30 - 1.2 1.4 0.9 - 55 to 150 260 Unit V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJC Typical 26 60 2.2 Maximum 35 85 2.7 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. Document Number: 72637 S09-0272-Rev. B, 16-Feb-09 www.vishay.com 1 Si7983DP Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.40 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 600 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS ≥ - 5 V, VGS = - 4.5 V VGS = - 4.5 V, ID = - 12 A 0.014 0.017 RDS(on) VGS = - 2.5 V, ID = - 11 A 0.016 0.020 VGS = - 1.8 V, ID = - 4.1 A 0.020 0.024 gfs VDS = - 15 V, ID = - 12 A 41 VSD IS = - 2.9 A, VGS = 0 V - 0.8 - 1.2 49 74 VDS = - 10 V, VGS = - 4.5 V, ID = - 12 A 7.2 Gate Threshold Voltage Drain-Source On-State Resistance a Forward Transconductancea Diode Forward Voltage a -1 V ± 100 nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C -5 µA - 30 A Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Rg Gate Resistance f = 1 MHz VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 8 td(on) Turn-On Delay Time nC 12.1 IF = - 2.9 A, dI/dt = 100 A/µs 35 55 60 90 390 585 190 285 106 160 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 5 thru 2 V 25 20 I D - Drain Current (A) I D - Drain Current (A) 25 1.5 V 15 10 5 20 15 10 TC = 125 °C 5 25 °C 1V - 55 °C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72637 S09-0272-Rev. B, 16-Feb-09 Si7983DP Vishay Siliconix 25 °C, unless otherwise noted 0.06 6000 0.05 5000 Ciss Capacitance (pF) 0.04 0.03 VGS = 1.8 V 0.01 3000 - VGS = 2.5 V 0.02 4000 2000 C R DS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS Coss 1000 VGS = 4.5 V Crss 0 0.00 0 5 10 15 - ID 20 25 0 30 4 8 VDS Drain Current (A) - On-Resistance vs. Drain Current 20 Drain-to-Source Voltage (V) 1.6 VDS = 10 V ID = 12 A VGS = 4.5 V ID = 12 A - On-Resistance 1.4 3 R DS(on) 2 (Normalized) 4 - Gate-to-Source Voltage (V) 16 Capacitance 5 V GS 12 1.2 1.0 0.8 1 0.6 0 0 10 20 Qg - 30 40 50 - 60 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.06 30 On-Resistance (Ω) TJ = 150 °C 0.04 ID = 12 A 0.03 R DS(on) - 10 - Source Current (A) 0.05 IS TJ = 25 °C 0.02 ID = 4.1 A 0.01 1 0.0 0.00 0.2 0.4 VSD - 0.6 0.8 1.0 Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72637 S09-0272-Rev. B, 16-Feb-09 1.2 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si7983DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.4 50 ID = 600 µA 40 0.2 30 Power (W) V GS(th) Variance (V) 0.3 0.1 20 0.0 10 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 0 0.001 150 0.01 0.1 TJ - Temperature (°C) 1 10 100 600 Time (s) Single Pulse Power, Junction-to-Ambient Threshold Voltage 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 0.1 TA = 25 °C Single Pulse dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 68 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72637 S09-0272-Rev. B, 16-Feb-09 Si7983DP Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (s) 10- 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72637. Document Number: 72637 S09-0272-Rev. 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