0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
SI9435BDY-T1-GE3

SI9435BDY-T1-GE3

  • 厂商:

    TFUNK(威世)

  • 封装:

    SOT96-1

  • 描述:

    MOSFET P-CH 30V 4.1A 8-SOIC

  • 数据手册
  • 价格&库存
SI9435BDY-T1-GE3 数据手册
Si9435BDY Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 10 V - 5.7 0.055 at VGS = - 6 V - 5.0 0.070 at VGS = - 4.5 V - 4.4 - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC SO-8 S S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9435BDY-T1-E3 (Lead (Pb)-free) Si9435BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a IS TA = 25 °C TA = 70 °C PD - 4.1 - 4.6 - 3.2 - 30 - 2.3 - 1.1 2.5 1.3 1.6 0.8 TJ, Tstg Operating Junction and Storage Temperature Range V - 5.7 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State RthJA RthJF Typical Maximum 40 50 70 95 24 30 Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72245 S09-0870-Rev. D, 18-May-09 www.vishay.com 1 Si9435BDY Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. - 1.0 Typ.a Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currentb ID(on) Gate Threshold Voltage Drain-Source On-State Resistance b b Forward Transconductance Diode Forward Voltage b - 3.0 V ± 100 nA VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 70 °C -5 RDS(on) VDS ≤ - 10 V, VGS = - 10 V - 20 VDS ≤ - 5 V, VGS = - 4.5 V -5 µA A VGS = - 10 V, ID = - 5.7 A 0.033 0.042 VGS = - 6 V, ID = - 5 A 0.043 0.055 0.070 VGS = - 4.5 V, ID = - 4.4 A 0.056 gfs VDS = - 15 V, ID = - 5.7 A 13 VSD IS = - 2.3 A, VGS = 0 V - 0.8 - 1.1 16 24 VDS = - 15 V, VGS = - 10 V, ID = - 3.5 A 2.3 Ω S V a Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.5 Gate Resistance Rg 8.8 td(on) 14 25 14 25 Turn-On Delay Time Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = - 15 V, RL = 15 Ω ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω IF = - 1.2 A, dI/dt = 100 A/µs nC Ω 42 70 30 50 30 60 ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72245 S09-0870-Rev. D, 18-May-09 Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 30 VGS = 10 V thru 6 V 5V 25 ID - Drain Current (A) ID - Drain Current (A) 25 20 15 4V 10 20 15 10 TC = 125 °C 5 5 25 °C 3V - 55 °C 0 0 0 1 2 3 4 0 5 1 4 5 Transfer Characteristics Output Characteristics 1100 0.15 880 C - Capacitance (pF) 0.12 0.09 VGS = 4.5 V 0.06 VGS = 6 V Ciss 660 440 Coss 220 0.03 VGS = 10 V Crss 0 0.00 0 4 8 12 16 0 20 5 10 20 25 30 Capacitance On-Resistance vs. Drain Current 1.6 10 VGS = 10 V ID = 5.7 A VDS = 15 V ID = 3.5 A 1.4 R DS(on) - On-Resistance (Normalized) 8 6 4 1.2 1.0 0.8 2 0 0.0 15 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) VGS - Gate-to-Source Voltage (V) 3 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) RDS(on) - On-Resistance (Ω) 2 3.2 6.4 9.6 Qg - Total Gate Charge (nC) Gate Charge Document Number: 72245 S09-0870-Rev. D, 18-May-09 12.8 16.0 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature www.vishay.com 3 Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 50 1 0.0 TJ = 25 °C TJ = 150 °C 10 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 0.16 ID = 5.7 A 0.12 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 0 1.2 2 8 10 On-Resistance vs. Gate-to-Source Voltage 0.6 150 0.4 120 ID = 250 µA 0.2 90 Power (W) V GS(th) Variance (V) 6 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 0.0 60 - 0.2 - 0.4 - 50 4 30 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10-1 1 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 10 100 Limited by RDS(on)* ID - Drain Current (A) 10 1 ms 1 0.1 10 ms 100 ms 1s 10 s TC = 25 °C Single Pulse DC 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VDS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Foot www.vishay.com 4 Document Number: 72245 S09-0870-Rev. D, 18-May-09 Si9435BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 70 °C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72245. Document Number: 72245 S09-0870-Rev. D, 18-May-09 www.vishay.com 5 Package Information Vishay Siliconix SOIC (NARROW): 8-LEAD JEDEC Part Number: MS-012 8 6 7 5 E 1 3 2 H 4 S h x 45 D C 0.25 mm (Gage Plane) A e B All Leads q A1 L 0.004" MILLIMETERS INCHES DIM Min Max Min Max A 1.35 1.75 0.053 0.069 A1 0.10 0.20 0.004 0.008 B 0.35 0.51 0.014 0.020 C 0.19 0.25 0.0075 0.010 D 4.80 5.00 0.189 0.196 E 3.80 4.00 0.150 e 0.101 mm 1.27 BSC 0.157 0.050 BSC H 5.80 6.20 0.228 0.244 h 0.25 0.50 0.010 0.020 L 0.50 0.93 0.020 0.037 q 0° 8° 0° 8° S 0.44 0.64 0.018 0.026 ECN: C-06527-Rev. I, 11-Sep-06 DWG: 5498 Document Number: 71192 11-Sep-06 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR SO-8 0.172 (4.369) 0.028 0.022 0.050 (0.559) (1.270) 0.152 (3.861) 0.047 (1.194) 0.246 (6.248) (0.711) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index APPLICATION NOTE Return to Index www.vishay.com 22 Document Number: 72606 Revision: 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
SI9435BDY-T1-GE3 价格&库存

很抱歉,暂时无法提供与“SI9435BDY-T1-GE3”相匹配的价格&库存,您可以联系我们找货

免费人工找货