SIA433EDJ-T1-GE3

New Product SiA433EDJ Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.018 at VGS = - 4.5 V - 12a 0.026 at VGS = - 2.5 V - 12a 0.065 at VGS = - 1.8 V -4 Qg (Typ.) 20 nC PowerPAK SC-70-6L-Single 1 D 3 G D 5 2.05 mm Marking Code S D S S APPLICATIONS 2 D 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg Tested • Built in ESD Protection with Zener Diode • Typical ESD Performance: 1800 V • Compliant to RoHS Directive 2002/95/EC 2.05 mm 4 • Portable Devices - Load Switch - Battery Switch - Charger Switch G R BLX Part # code XXX Lot Traceability and Date code D P-Channel MOSFET Ordering Information: SiA433EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Maximum Power Dissipation ID Operating Junction and Storage Temperature Range TJ, Tstg d, e V - 12a - 2.9b, c 19 12 IS PD Unit - 12a - 12a - 11.3b, c - 9.1b, c - 50 IDM Continuous Source-Drain Diode Current Soldering Recommendations (Peak Temperature) Limit - 20 ± 12 3.5b, c 2.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t≤5s Steady State Symbol RthJA RthJC Typical 28 5.3 Maximum 36 6.5 Unit °C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 80 °C/W. Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 www.vishay.com 1 New Product SiA433EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 20 Typ. Max. Unit Static Drain-Source Breakdown Voltage ΔVDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea IGSS IDSS ID(on) RDS(on) gfs ID = - 250 µA VDS = VGS, ID = - 250 µA V - 12 mV/°C 3 - 0.5 - 1.2 VDS = 0 V, VGS = ± 12 V ± 20 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≤ - 5 V, VGS = - 4.5 V - 20 V µA A VGS = - 4.5 V, ID = - 7.6 A 0.015 0.018 VGS = - 2.5 V, ID = - 6.3 A 0.021 0.026 VGS = - 1.8 V, ID = - 2.5 A 0.040 0.065 VDS = - 10 V, ID = - 7.6 A 35 VDS = - 10 V, VGS = - 8 V, ID = - 11 A 50 75 20 30 Ω S Dynamicb Total Gate Charge Gate-Source Charge Qg Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time VDS = - 10 V, VGS = - 4.5 V, ID = - 11 A td(off) f = 1 MHz VDD = - 10 V, RL = 1 Ω ID ≅ - 9 A, VGEN = - 4.5 V, Rg = 1 Ω 0.2 1 2 0.71 1.1 1.7 2.6 6 9 tf 3.2 5 td(on) 0.3 0.45 0.6 0.9 10 15 3.5 5.5 tr td(off) nC 8.4 td(on) tr 3.3 VDD = - 10 V, RL = 1 Ω ID ≅ - 9 A, VGEN = - 10 V, Rg = 1 Ω tf kΩ us Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 12 - 50 IS = - 9 A, VGS = 0 V IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.85 - 1.2 V 30 60 ns 20 40 nC 13 17 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 New Product SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10-2 1.0 10-3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 0.8 0.6 0.4 TJ = 25 °C 10-4 10-5 TJ = 150 °C 10-6 10-7 TJ = 25 °C 0.2 10-8 10-9 0.0 0 3 6 9 12 15 0 3 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 10 50 VGS = 5 V thru 3 V VGS = 2.5 V 8 I D - Drain Current (A) I D - Drain Current (A) 40 30 VGS = 2 V 20 6 4 TC = 25 °C 2 10 TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 TC = - 55 °C 0.5 1.5 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Transfer Characteristics Output Characteristics 10 0.08 VGS - Gate-to-Source Voltage (V) 0.07 R DS(on) - On-Resistance (Ω) 1.0 VGS = 1.8 V 0.06 0.05 0.04 VGS = 2.5 V 0.03 0.02 0.01 ID = 11 A 8 VDS = 10 V 6 VDS = 16 V VDS = 5 V 4 2 VGS = 4.5 V 0 0.00 0 10 20 30 40 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 50 0 10 20 30 40 50 Qg - Total Gate Charge (nC) Gate Charge www.vishay.com 3 New Product SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.6 100 ID = 7.6 A (Normalized) R DS(on) - On-Resistance I S - Source Current (A) VGS = 4.5 V 1.4 1.2 VGS = 2.5 V 1.0 10 TJ = 150 °C TJ = 25 °C 1 0.8 0.6 - 50 - 25 0 25 50 75 100 125 0.1 0.0 150 0.2 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 0.6 0.8 1.0 1.2 Soure-Drain Diode Forward Voltage 1.1 0.06 1.0 0.05 ID = 7.6 A; TJ = 125 °C 0.9 ID = 2.5 A; TJ = 125 °C 0.04 VGS(th) (V) R DS(on) - On-Resistance (Ω) 0.4 VSD - Source-to-Drain Voltage (V) 0.03 ID = 2.5 A; TJ = 25 °C 0.8 ID = 250 µA 0.7 ID = 7.6 A; TJ = 25 °C 0.02 0.6 0.01 0.5 0.4 - 50 0.00 0 1 2 3 4 5 - 25 0 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 150 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage 100 30 Limited by RDS(on)* I D - Drain Current (A) 25 Power (W) 20 15 10 100 µs 10 1 ms 1 10 ms 100 ms 1 s, 10 s 0.1 5 TA = 25 °C Single Pulse DC BVDSS Limited 0 0.001 0.01 0.1 1 10 100 1000 Time (s) Single Pulse Power, Junction-to-Ambient www.vishay.com 4 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 New Product SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 20 Power Dissipation (W) I D - Drain Current (A) 25 20 15 Package Limited 10 15 10 5 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Power Derating * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 www.vishay.com 5 New Product SiA433EDJ Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 10-4 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65472. www.vishay.com 6 Document Number: 65472 S09-2114-Rev. A, 12-Oct-09 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000