SIA453EDJ-T1-GE3

SiA453EDJ www.vishay.com Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () (Max.) ID (A)a 0.0185 at VGS = - 10 V - 24 0.0235 at VGS = - 4.5 V - 21 0.0260 at VGS = - 3.7 V - 20 0.0377 at VGS = - 2.5 V - 10 Qg (Typ.) 21 nC PowerPAK SC-70-6L-Single APPLICATIONS 1 D 2 3 6 G 5 S D 2.05 mm S S • Portable Devices such as Smart Phones, Tablet PCs and Mobile Computing - Load Switch - Power Management - Input Protection Switch (over  voltage, reverse voltage) D D • TrenchFET® Power MOSFET • Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance • 100 % Rg and UIS Tested • Typical ESD Protection: 4000 V (HBM) • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 G Marking Code 2.05 mm 4 B2X Part # code Ordering Information: SiA453EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) D XXX Lot Traceability and Date code P-Channel MOSFET Unit ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS - 30 Gate-Source Voltage VGS ± 12 TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C - 24 - 19 ID - 10b, c - 8b, c TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current Single Avalanche Current Single Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C - 16 IS - 2.9b, c IAS - 10 EAS 5 mJ 19 12 PD W 3.5b, c 2.2b, c TA = 70 °C Operating Junction and Storage Temperature Range A - 80 TC = 25 °C Maximum Power Dissipation V TJ, Tstg - 50 to 150 Soldering Recommendations (Peak Temperature)d, e °C 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) Symbol Typical Maximum t5s RthJA 28 36 Steady State RthJC 5.3 6.5 Unit °C/W Notes a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. S13-1271-Rev. A, 27-May-13 Document Number: 62864 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA453EDJ www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 μA - 30 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th) Temperature Coefficient VGS(th)/TJ ID = - 250 μA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 μA Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea V - 21 - 0.6 - 1.4 VDS = 0 V, VGS = ± 12 V ±4 VDS = 0 V, VGS = ± 4.5 V ± 0.5 VDS = - 30 V, VGS = 0 V -1 VDS = - 30 V, VGS = 0 V, TJ = 55 °C VDS  - 5 V, VGS = - 10 V RDS(on) gfs mV/°C 3.1 V μA - 10 - 10 A VGS = - 10 V, ID = - 5 A 0.0150 0.0185 VGS = - 4.5 V, ID = - 5 A 0.0185 0.0235 VGS = - 3.7 V, ID = - 5 A 0.0205 0.0260 VGS = - 2.5 V, ID = - 2 A 0.0290 0.0377 VGS = - 15 V, ID = - 5 A 22  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1900 VDS = - 15 V, VGS = 0 V, f = 1 MHz 160 pF 145 VDS = - 15 V, VGS = - 10 V, ID = - 11 A VDS = - 15 V, VGS = - 4.5 V, ID = - 11 A 44 66 21 32 3.9 nC 5.9 f = 1 MHz td(on) VDD = - 15 V, RL = 1.7  ID  - 9 A, VGEN = - 4.5 V, Rg = 1  tr td(off) 1.8 9 18 25 50 45 90 65 130 tf 28 55 td(on) 10 20 5 10 90 180 25 50 VDD = - 15 V, RL = 1.7  ID  - 9 A, VGEN = - 10 V, Rg = 1  tr td(off) tf  ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Current (t = 100 μs) ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 16 - 80 IS = - 9 A, VGS = 0 V IF = - 9 A, dI/dt = 100 A/μs, TJ = 25 °C A - 0.85 - 1.2 V 22 45 ns 20 40 nC 16 6 ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S13-1271-Rev. A, 27-May-13 Document Number: 62864 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA453EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10-2 20 10-3 12 IGSS - Gate Current (A) IGSS - Gate Current (mA) 16 TJ = 25 °C 8 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 4 10-8 10-9 0 0 4 8 12 16 0 20 4 Gate Current vs. Gate-Source Voltage 80 8 12 16 20 VGS - Gate-to-Source Voltage (V) VGS - Gate-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage 20 VGS = 10 V thru 5 V VGS = 4 V 16 ID - Drain Current (A) ID - Drain Current (A) 60 VGS = 3 V 40 12 TC = 25 °C 8 20 TC = 125 °C 4 VGS = 2 V TC = - 55 °C 0 0 0.0 0.5 1.0 1.5 2.0 2.5 0.0 3.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.5 3000 0.060 VGS = 2.5 V 2500 VGS = 4.5 V 0.040 VGS = 3.7 V 0.030 0.020 VGS = 10 V 0.010 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 0.050 Ciss 2000 1500 1000 Coss 500 Crss 0 0.000 0 20 40 60 80 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage S13-1271-Rev. A, 27-May-13 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 62864 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA453EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 VDS = 10 V ID = 11 A 8 6 VDS = 5 V VDS = 16 V 4 1.8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 2 VGS = 4.5 V, 3.7 V 1.4 VGS = 2.5 V 1.2 1.0 0.8 0.6 0 0.4 0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.050 TJ = 150 °C ID = 5 A 0.040 RDS(on) - On-Resistance (Ω) IS - Source Current (A) VGS = 10 V ID = 5 A 1.6 10 TJ = 25 °C 1 0.030 TJ = 125 °C 0.020 TJ = 25 °C 0.010 0.1 0.000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Soure-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.1 30 1.0 25 0.9 Power (W) VGS(th) (V) 20 0.8 0.7 ID = 250 μA 15 10 0.6 5 0.5 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (°C) Threshold Voltage S13-1271-Rev. A, 27-May-13 Single Pulse Power, Junction-to-Ambient Document Number: 62864 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA453EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* ID - Drain Current (A) 10 100 µs 1 ms 1 10 ms 0.1 100 ms 10 s 1s TA = 25 °C DC BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 30 20 Power Dissipation (W) ID - Drain Current (A) 25 20 15 10 15 10 5 5 0 0 0 25 50 75 100 TC - Case Temperature (°C) Current Derating* 125 150 25 50 75 100 125 TC - Case Temperature (°C) 150 Power Derating       * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S13-1271-Rev. A, 27-May-13 Document Number: 62864 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA453EDJ www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 80 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 1 0.1 10-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case                    Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62864. S13-1271-Rev. A, 27-May-13 Document Number: 62864 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Single 0.300 (0.012) 0.650 (0.026) 0.350 (0.014) 0.275 (0.011) 0.550 (0.022) 0.475 (0.019) 2.200 (0.087) 1.500 (0.059) 0.870 (0.034) 0.235 (0.009) 0.355 (0.014) 0.350 (0.014) 1 0.650 (0.026) 0.300 (0.012) 0.950 (0.037) Dimensions in mm/(Inches) Return to Index APPLICATION NOTE Document Number: 70486 Revision: 21-Jan-08 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000