SIA519EDJ-T1-GE3

SiA519EDJ Vishay Siliconix N- and P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 20 RDS(on) () ID (A) • TrenchFET® Power MOSFETs • Typical ESD Protection: N-Channel 2000 V P-Channel 1000 V • 100 % Rg Tested • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Qg (Typ.) a 0.040 at VGS = 4.5 V 4.5 0.065 at VGS = 2.5 V 4.5a 0.090 at VGS = - 4.5 V - 4.5a 0.137 at VGS = - 2.5 V - 4.5a 3.7 nC 5.3 nC PowerPAK® SC-70-6 Dual D1 S2 1 S1 2 G1 3 D2 D1 D1 6 G1 Marking Code G2 D2 EGX G2 5 2.05 mm 4 S2 2.05 mm Part # code XXX Lot Traceability and Date code D2 S1 Ordering Information: SiA519EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C P-Channel - 20 ± 12 4.5a ID IDM Pulsed Drain Current N-Channel 20 IS PD V 4.5a 4.5a - 4.5a 4.5a, b, c 4.4b, c 15 4.5a - 3.7b, c - 3b, c - 15 - 4.5a 1.6b, c 7.8 5 - 1.6b, c 7.8 5 1.9b, c 1.2b, c 1.9b, c 1.2b, c TJ, Tstg Unit - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS N-Channel P-Channel Typ. Max. Typ. Max. Symbol Unit t5s RthJA 52 65 52 65 Maximum Junction-to-Ambientb, f °C/W RthJC Maximum Junction-to-Case (Drain) Steady State 12.5 16 12.5 16 Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 110 °C/W. Parameter Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS Drain-Source Breakdown Voltage VDS/TJ VDS Temperature Coefficient VGS(th)/TJ VGS(th) Temperature Coefficient VGS(th) Gate Threshold Voltage VGS = 0 V, ID = 250 µA N-Ch 20 VGS = 0 V, ID = - 250 µA P-Ch - 20 ID = 250 µA N-Ch 23 ID = - 250 µA P-Ch - 11 ID = 250 µA N-Ch - 3.3 ID = - 250 µA P-Ch N-Ch 0.6 1.4 VDS = VGS, ID = - 250 µA P-Ch - 0.5 - 1.3 ± 0.5 P-Ch ± 0.5 N-Ch ± 90 P-Ch ±8 VDS = 20 V, VGS = 0 V N-Ch 1 -1 VDS = 0 V, VGS = ± 12 V IDSS On-State Drain Currentb ID(on) Drain-Source On-State Resistanceb Forward Transconductanceb RDS(on) gfs 2.6 N-Ch IGSS Zero Gate Voltage Drain Current mV/°C VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 4.5 V Gate-Body Leakage V VDS = - 20 V, VGS = 0 V P-Ch VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 20 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS 5 V, VGS = 4.5 V N-Ch 10 VDS - 5 V, VGS = - 4.5 V P-Ch - 10 V µA A VGS = 4.5 V, ID = 4.2 A N-Ch 0.032 0.040 VGS = - 4.5 V, ID = - 2.9 A P-Ch 0.074 0.090 VGS = 2.5 V, ID = 3.3 A N-Ch 0.053 0.065 VGS = - 2.5 V, ID = - 2.3 A P-Ch 0.113 0.137 VDS = 10 V, ID = 4.2 A N-Ch 12 VDS = - 10 V, ID = - 2.9 A P-Ch 7  S Dynamica Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Crss Qg N-Channel VDS = 10 V, VGS = 0 V, f = 1 MHz P-Channel VDS = - 10 V, VGS = 0 V, f = 1 MHz Rg 350 P-Ch 340 N-Ch 82 P-Ch 105 N-Ch 50 pF P-Ch 95 VDS = 10 V, VGS = 10 V, ID = 5.5 A N-Ch 7.7 12 VDS = - 10 V, VGS = - 10 V, ID = - 3.7 A P-Ch 10.5 16 N-Ch 3.7 6 N-Channel VDS = 10 V, VGS = 4.5 V, ID = 5.5 A P-Ch 5.3 8 N-Ch 0.85 P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 3.7 A P-Ch 0.75 N-Ch 0.95 Qgs Qgd N-Ch P-Ch f = 1 MHz nC 2 N-Ch 0.7 3.5 7 P-Ch 0.2 10 20  Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. www.vishay.com 2 For technical questions, contact: pmostechsupport@vishay.com Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamica td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time td(on) Turn-On Delay Time tr Rise Time Fall Time P-Channel VDD = - 10 V, RL = 3.3  ID  - 3 A, VGEN = - 4.5 V, Rg = 1  N-Channel VDD = 10 V, RL = 2.3  ID  4.4 A, VGEN = 10 V, Rg = 1  tf P-Channel VDD = - 10 V, RL = 3.3  ID  - 3 A, VGEN = - 10 V, Rg = 1  IS TC = 25 °C td(off) Turn-Off Delay Time N-Channel VDD = 10 V, RL = 2.3  ID  4.4 A, VGEN = 4.5 V, Rg = 1  N-Ch 10 15 P-Ch 20 30 N-Ch 12 20 P-Ch 20 30 N-Ch 21 35 P-Ch 25 40 N-Ch 16 25 P-Ch 10 15 N-Ch 5 10 10 P-Ch 5 N-Ch 10 15 P-Ch 10 15 N-Ch 15 25 P-Ch 20 30 N-Ch 10 15 P-Ch 10 15 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta ISM VSD Body Diode Voltage Body Diode Reverse Recovery Time N-Ch 4.5 P-Ch - 4.5 N-Ch 15 P-Ch - 15 IS = 4.4 A, VGS = 0 V N-Ch 0.8 1.2 IS = - 3 A, VGS = 0 V P-Ch - 0.8 - 1.2 trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 4.4 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 3 A, dI/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A N-Ch 15 30 P-Ch 26 50 N-Ch 8 20 P-Ch 13 25 N-Ch 8 P-Ch 14 N-Ch 7 P-Ch 12 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width  300 µs, duty cycle  2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 50 10-1 10-2 10-3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 40 IGSS at 25 °C 30 20 10-4 TJ = 150 °C 10-5 10-6 TJ = 25 °C 10-7 10-8 10 10-9 0 10-10 0 3 6 9 12 15 0 18 3 6 9 12 15 18 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 5 VGS = 5 V thru 3 V 4 VGS = 2.5 V I D - Drain Current (A) I D - Drain Current (A) 12 9 6 VGS = 2 V 3 3 2 TC = 25 °C 1 TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0 0.0 3.0 0.5 1.5 2.0 2.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.12 500 0.10 400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 1.0 0.08 VGS = 2.5 V 0.06 VGS = 4.5 V 0.04 Ciss 300 200 Coss 100 0.02 Crss 0.00 0 0 3 6 9 12 15 ID - Drain Current (A) 0 2 4 6 10 12 14 16 18 20 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage www.vishay.com 4 8 For technical questions, contact: pmostechsupport@vishay.com Capacitance Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 10 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 5.5 A 8 VDS = 5 V 6 VDS = 16 V 4 VDS = 10 V 2 2 4 6 1.4 VGS = 4.5 V, 2.5 V 1.2 1.0 0.8 0.6 - 50 0 0 ID = 4.2 A 8 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 0.12 100 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.10 10 TJ = 150 °C TJ = 25 °C 1 ID = 2 A; TJ = 125 °C 0.08 ID = 4.2 A; TJ = 125 °C 0.06 ID = 2 A; TJ = 25 °C ID = 4.2 A; TJ = 25 °C 0.04 0.02 0.00 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 1.3 20 1.2 15 Power (W) VGS(th) (V) 1.1 1.0 ID = 250 µA 0.9 0.8 10 5 0.7 0.6 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 1 ms 10 ms 0.1 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 12 8 Power Dissipation (W) I D - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 For technical questions, contact: pmostechsupport@vishay.com Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 85 °C/W Single Pulse 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 7 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 4 10-2 10-4 3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 10-3 2 IGSS at 25 °C 1 10-5 10-6 TJ = 150 °C 10-7 TJ = 25 °C 10-8 10-9 10-10 10-11 10-12 0 0 3 6 9 12 15 0 18 6 9 12 15 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 15 18 5 VGS = 3 V VGS = 5 V thru 3.5 V 12 4 I D - Drain Current (A) I D - Drain Current (A) 3 VGS = 2.5 V 9 6 VGS = 2 V 3 3 2 TC = 25 °C 1 TC = 125 °C VGS = 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 TC = - 55 °C 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.30 2.5 800 600 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.25 0.20 0.15 VGS = 2.5 V 0.10 VGS = 4.5 V Ciss 400 200 Coss 0.05 Crss 0.00 0 0 3 6 9 12 15 0 3 6 9 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance www.vishay.com 8 For technical questions, contact: pmostechsupport@vishay.com 12 Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1.6 10 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) ID = 3.7 A 8 VDS = 10 V 6 VDS = 5 V 4 VDS = 16 V 2 3 6 9 1.4 VGS = 2.5 V 1.2 VGS = 4.5 V 1.0 0.8 0.6 - 50 0 0 ID = 2.9 A 12 - 25 0 Qg - Total Gate Charge (nC) 25 50 75 100 125 150 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.30 R DS(on) - On-Resistance (Ω) I S - Source Current (A) 0.25 TJ = 150 °C 10 TJ = 25 °C 1 0.20 ID = 1 A, TJ = 125 °C ID = 2.9 A, TJ = 125 °C 0.15 ID = 1 A, TJ = 25 °C 0.10 ID = 2.9 A, TJ = 25 °C 0.05 0.00 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 1.0 0.9 15 ID = 250 µA Power (W) VGS(th) (V) 0.8 0.7 10 0.6 5 0.5 0.4 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 TJ - Temperature (°C) Pulse (s) Threshold Voltage Single Pulse Power (Junction-to-Ambient) Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 9 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 100 Limited by RDS(on)* I D - Drain Current (A) 10 100 µs 1 1 ms 10 ms TA = 25 °C Single Pulse 100 ms 1 s, 10 s DC 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 10 Power Dissipation (W) I D - Drain Current (A) 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 TC - Case Temperature (°C) 125 150 25 50 75 100 125 150 TC - Case Temperature (°C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 For technical questions, contact: pmostechsupport@vishay.com Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiA519EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65176. Document Number: 65176 S13-1890-Rev. D, 02-Sep-13 For technical questions, contact: pmostechsupport@vishay.com www.vishay.com 11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix b e PIN1 PIN3 PIN1 PIN2 PIN3 PIN5 K1 E1 E1 K PIN6 K3 D1 D1 K D2 D1 E3 E1 E2 K4 K L PIN2 b e L PowerPAK® SC70-6L PIN6 PIN4 K2 PIN5 K1 K2 BACKSIDE VIEW OF SINGLE PIN4 K2 BACKSIDE VIEW OF DUAL A D C A1 E Notes: 1. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating Z z DETAIL Z SINGLE PAD DIM A MILLIMETERS DUAL PAD INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 A1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 C 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 D 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 D1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 D2 0.135 0.235 0.335 0.005 0.009 0.013 E 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 E1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 E2 0.345 0.395 0.445 0.014 0.016 0.018 E3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 BSC 0.026 BSC 0.65 BSC 0.026 BSC K 0.275 TYP 0.011 TYP 0.275 TYP 0.011 TYP K1 0.400 TYP 0.016 TYP 0.320 TYP 0.013 TYP K2 0.240 TYP 0.009 TYP 0.252 TYP 0.010 TYP K3 0.225 TYP 0.009 TYP K4 L 0.355 TYP 0.175 0.275 0.014 TYP 0.375 T 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 0.05 0.10 0.15 0.002 0.004 0.006 ECN: C-07431 − Rev. C, 06-Aug-07 DWG: 5934 Document Number: 73001 06-Aug-07 www.vishay.com 1 Application Note 826 Vishay Siliconix RECOMMENDED PAD LAYOUT FOR PowerPAK® SC70-6L Dual 2.500 (0.098) 0.300 (0.012) 0.350 (0.014) 0.325 (0.013) 0.275 (0.011) 0.613 (0.024) 2.500 (0.098) 0.950 (0.037) 0.475 (0.019) 0.160 (0.006) 0.275 (0.011) 1 0.650 (0.026) 1.600 (0.063) APPLICATION NOTE Dimensions in mm (inches) Return to Index www.vishay.com 1 Document Number: 70487 Revision: 18-Oct-13 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000