SIA777EDJ-T1-GE3

SiA777EDJ Vishay Siliconix N- and P-Channel for Level Shift Load Switch FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Typical ESD Protection: N-Channel 2800 V P-Channel 1900 V • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) N-Channel 20 P-Channel - 12 RDS(on) (Ω) ID (A) 0.225 at VGS = 4.5 V 0.270 at VGS = 2.5 V 0.345 at VGS = 1.8 V 0.960 at VGS = 1.5 V 0.057 at VGS = - 4.5 V 0.077 at VGS = - 2.5 V 0.115 at VGS = - 1.8 V 0.200 at VGS = - 1.5 V 1.5a 1.5a 1.5a 0.5 - 4.5a - 4.5a - 4.5a - 1.5 Qg (Typ.) 1.1 nC APPLICATIONS • Load Switch with Level Shift for Portable Devices - N-Channel for Level Shift Drive - P-Channel for Main Switch 5 nC PowerPAK® SC-70-6 Dual D2 S2 1 S1 Q2 D1/G2 2 G1 D 1/G 2 3 D2 D1/G2 Marking Code D2 6 Part # code NC 5 2.05 mm 4 S2 R 2.05 mm Q1 G1 EFX XXX Lot Traceability and Date code S1 Ordering Information: SiA777EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Source Drain Current Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C P-Channel - 12 ±8 a ID IDM Pulsed Drain Current N-Channel 20 ±6 IS PD TJ, Tstg Unit V a 1.5 1.5a - 4.5 - 4.5a 1.5a, b, c 1.5a, b, c 4 1.5a - 4.5a, b, c - 3.9b, c - 15 - 4.5a 1.6b, c 5 3.2 - 1.6b, c 7.8 5 1.9b, c 1.2b, c 1.9b, c 1.2b, c - 55 to 150 260 A W °C THERMAL RESISTANCE RATINGS Parameter N-Channel Typ. Max. 52 65 20 25 P-Channel Typ. Max. 52 65 12.5 16 Unit t≤5s Maximum Junction-to-Ambientb, f °C/W Maximum Junction-to-Case (Drain) Steady State Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for channel 1 and channel 2 is 110 °C/W. Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 Symbol RthJA RthJC www.vishay.com 1 SiA777EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain-Source On-State Resistanceb Forward Transconductanceb VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs VGS = 0 V, ID = 250 µA N-Ch 20 VGS = 0 V, ID = - 250 µA P-Ch - 12 ID = 250 µA N-Ch V 21 ID = - 250 µA P-Ch -3 ID = 250 µA N-Ch - 2.3 mV/°C ID = - 250 µA P-Ch VDS = VGS, ID = 250 µA N-Ch 0.4 1.0 VDS = VGS, ID = - 250 µA P-Ch - 0.4 -1 2.3 VDS = 0 V, VGS = ± 3 V N-Ch ±1 VDS = 0 V, VGS = ± 4.5 V P-Ch ± 0.5 VDS = 0 V, VGS = ± 6 V N-Ch ±1 VDS = 0 V, VGS = ± 8 V P-Ch ±3 VDS = 20 V, VGS = 0 V N-Ch 1 VDS = - 12 V, VGS = 0 V P-Ch -1 VDS = 20 V, VGS = 0 V, TJ = 55 °C N-Ch 10 VDS = - 12 V, VGS = 0 V, TJ = 55 °C P-Ch - 10 VDS ≥ 5 V, VGS = 4.5 V N-Ch 4 VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 10 V µA mA µA A VGS = 4.5 V, ID = 1.6 A N-Ch 0.183 0.225 VGS = - 4.5 V, ID = - 3.8 A P-Ch 0.047 0.057 VGS = 2.5 V, ID = 1.5 A N-Ch 0.220 0.270 VGS = - 2.5 V, ID = - 3.3 A P-Ch 0.063 0.077 VGS = 1.8 V, ID = 1.3 A N-Ch 0.275 0.345 VGS = - 1.8 V, ID = 2.6 A P-Ch 0.095 0.115 VGS = 1.5 V, ID = 0.3 A N-Ch 0.320 0.960 VGS = - 1.5 V, ID = 1 A P-Ch 0.125 0.200 VDS = 10 V, ID = 1.6 A N-Ch 3.5 VDS = - 10 V, ID = - 3.8 A P-Ch 11 VDS = 10 V, VGS = 5 V, ID = 1.7 A N-Ch 1.3 VDS = - 6 V, VGS = - 8 V, ID = - 4.9 A P-Ch 7.5 12 N-Ch 1.1 1.7 8 Ω S Dynamica Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.7 A P-Ch 5 N-Ch 0.2 P-Channel VDS = - 6 V, VGS = - 4.5 V, ID = - 4.9 A P-Ch 0.6 N-Ch 0.1 Qgs Qgd Rg P-Ch f = 1 MHz 2.2 nC 1.8 N-Ch 40 200 400 P-Ch 2 10 20 Ω Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 SiA777EDJ Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Dynamica Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(on) tr N-Channel VDD = 10 V, RL = 7.7 Ω ID ≅ 1.3 A, VGEN = 4.5 V, Rg = 1 Ω tf P-Channel VDD = - 6 V, RL = 1.5 Ω ID ≅ - 3.9 A, VGEN = - 4.5 V, Rg = 1 Ω IS TC = 25 °C td(off) N-Ch 20 30 P-Ch 20 30 N-Ch 12 20 P-Ch 20 30 N-Ch 70 105 50 P-Ch 32 N-Ch 20 30 P-Ch 16 25 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time ISM VSD N-Ch 1.5 P-Ch - 4.5 N-Ch 4 - 15 P-Ch IS = 1.3 A, VGS = 0 V N-Ch 0.9 1.2 IS = - 3.9 A, VGS = 0 V P-Ch - 0.8 - 1.2 trr Body Diode Reverse Recovery Charge Qrr N-Channel IF = 1.3 A, dI/dt = 100 A/µs, TJ = 25 °C Reverse Recovery Fall Time ta P-Channel IF = - 3.9 A, dI/dt = - 100 A/µs, TJ = 25 °C Reverse Recovery Rise Time tb A N-Ch 50 75 P-Ch 45 70 N-Ch 30 45 P-Ch 25 40 N-Ch 15 P-Ch 15 N-Ch 35 P-Ch 30 V ns nC ns Notes: a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 www.vishay.com 3 SiA777EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 35 10-1 10-2 10-3 I GSS - Gate Current (A) I GSS - Gate Current (mA) 30 25 20 15 10 10-4 10-5 TJ = 25 °C TJ = 150 °C 10-6 10-7 10-8 5 10-9 0 10-10 0 2 4 6 8 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-to-Source Voltage Gate Current vs. Gate-to-Source Voltage 4.0 2.0 3.5 VGS = 5 V thru 2 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 3.0 2.5 2.0 VGS = 1.5 V 1.5 1.2 0.8 TC = 25 °C 1.0 0.4 TC = 125 °C 0.5 VGS = 1 V 0.0 0.0 0.5 1.0 1.5 2.0 2.5 TC = - 55 °C 0.0 0.0 3.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 0.50 ID = 1.7 A VGS = 1.5 V VGS - Gate-to-Source Voltage (V) R DS(on) - On-Resistance (Ω) 0.45 VGS = 1.8 V 0.40 0.35 0.30 VGS = 2.5 V 0.25 4 VDS = 10 V VDS = 16 V 2 0.20 VGS = 4.5 V 0.15 0.0 www.vishay.com 4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.3 0.6 0.9 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge 1.2 1.5 Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 SiA777EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 10 1.7 1.6 I S - Source Current (A) VGS = 4.5 V, 2.5 V, 1.8 V; ID = 1.6 A 1.4 (Normalized) R DS(on) - On-Resistance 1.5 1.3 1.2 1.1 VGS = 1.5 V; ID = 0.4 A 1.0 1 TJ = 25 °C TJ = 150 °C 0.1 0.9 0.8 0.7 - 50 - 25 0 25 50 75 100 125 0.01 0.0 150 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Normalized On-Resistance vs. Junction Temperature 8 1.0 6 Power (W) R DS(on) - On-Resistance (Ω) ID = 1.6 A 0.8 0.6 0.4 4 TJ = 125 °C 2 0.2 TJ = 25 °C 0 0.001 0.0 0 1 2 3 4 5 0.01 0.1 1 10 100 1000 Time (s) VGS - Gate-to-Source Voltage (V) Single Pulse Power, Junction-to-Ambient On-Resistance vs. Gate-to-Source Voltage 10 0.9 Limited by RDS(on)* 100 µs I D - Drain Current (A) VGS(th) (V) 0.8 0.7 ID = 250 µA 0.6 1 1 ms 10 ms 100 ms 0.1 1 s, 10 s DC 0.5 TA = 25 °C Single Pulse 0.4 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 100 125 150 0.01 0.1 BVDSS Limited 100 1 10 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 5 SiA777EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 5 4 4 Power Dissipation (W) I D - Drain Current (A) 3 2 Package Limited 3 2 1 1 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 SiA777EDJ Vishay Siliconix N-CHANNEL TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 0.02 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = RthJA = 110 °C/W 3. TJM - T A = PDMZthJA(t) 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.1 10 -4 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 www.vishay.com 7 SiA777EDJ Vishay Siliconix 3.0 10-3 2.5 10-4 TJ = 25 °C I GSS - Gate Current (A) I GSS - Gate Current (mA) P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 1.5 1.0 0.5 TJ = 25 °C 10-6 10-7 10-8 10-9 0.0 10-10 0 3 6 9 12 15 0 3 6 9 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 15 10 VGS = 3 V VGS = 5 V thru 3.5 V 8 I D - Drain Current (A) 20 VGS = 2.5 V 15 VGS = 2 V 10 5 6 4 TC = 25 °C 2 VGS = 1.5 V TC = 125 °C TC = - 55 °C VGS = 1 V 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 1.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 2.0 1200 0.25 VGS = 1.5 V VGS = 1.8 V 1000 0.20 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 12 Gate Current vs. Gate-Source Voltage 25 I D - Drain Current (A) TJ = 150 °C 10-5 0.15 0.10 VGS = 2.5 V 0.05 800 Ciss 600 Crss 400 Coss 200 VGS = 4.5 V 0 0.00 0 3 6 9 12 15 ID - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage www.vishay.com 8 0 3 6 9 12 VDS - Drain-to-Source Voltage (V) Capacitance Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 SiA777EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.4 ID = 4.9 A VDS = 10 V 4 VDS = 3 V VDS = 9.6 V 2 VGS = 2.5 V; ID = 3.8 A 1.2 (Normalized) 6 1.1 VGS = 1.8 V; ID = 1 A 1.0 VGS = 1.5 V; ID = 1 A 0.9 0.8 - 50 0 0 2 4 6 8 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.20 0.16 R DS(on) - On-Resistance (Ω) I S - Source Current (A) VGS = 4.5 V; ID = 3.8 A 1.3 R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 8 10 TJ = 150 °C TJ = 25 °C 1 ID = 1 A; TJ = 125 °C 0.12 ID = 3.8 A; TJ = 125 °C 0.08 ID = 3.8 A; TJ = 25 °C ID = 1 A; TJ = 25 °C 0.04 0.00 0.1 0.0 0.5 1.0 0 1.5 1 VSD - Source-to-Drain Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 20 0.7 0.6 0.5 Power (W) VGS(th) (V) 15 ID = 250 µA 0.4 10 5 0.3 0.2 - 50 - 25 0 25 50 75 TJ - Temperature (°C) Threshold Voltage Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 100 125 150 0 0.001 0.01 0.1 1 10 100 1000 Pulse (s) Single Pulse Power (Junction-to-Ambient) www.vishay.com 9 SiA777EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 I D - Drain Current (A) Limited by RDS(on)* 10 100 µs 1 ms 1 10 ms 0.1 100 ms 1 s, 10 s DC TA = 25 °C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 8 12 Power Dissipation (W) I D - Drain Current (A) 10 8 6 Package Limited 4 6 4 2 2 0 0 0 25 50 75 100 125 150 25 50 75 100 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 125 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 10 Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 SiA777EDJ Vishay Siliconix P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = Single Pulse t1 t2 2. Per Unit Base = R thJA = 110 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65371. Document Number: 65371 S09-2032-Rev. A, 05-Oct-09 www.vishay.com 11 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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