SIDR622DP-T1-GE3

SiDR622DP www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) MOSFET FEATURES PowerPAK® SO-8DC D D 6 5 D 7 • TrenchFET® power MOSFET D 8 • 100 % Rg and UIS tested • Top side cooling feature provides additional venue for thermal transfer S 6.1 5m m 1 3 4 S G m 5m 5.1 Top View 1 2 S S APPLICATIONS D • Synchronous rectification Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • Primary side switching 150 0.0177 0.0204 20.7 56.7 Single • High power density DC/DC G • H-bridge • Motor drive control S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK SO-8DC SiDR622DP-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche Energy L = 0.1 mH IAS EAS Maximum power dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range Soldering recommendations (peak temperature) d, e TJ, Tstg LIMIT 150 ± 20 56.7 45.3 64.6 b, c 51.7 b, c 100 60 g 5.6 b, c 40 80 125 80 6.25 b, c 4 b, c -55 to +150 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT t ≤ 10 s RthJA 15 20 Maximum junction-to-ambient b, f Maximum junction-to-case (drain) Steady state RthJC °C/W 0.8 1 Maximum junction-to-case (source) Steady state RthJC 1.1 1.4 Notes a. Based on TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. t = 10 s d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8DC is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 54 °C/W g. Package limited S17-1100-Rev. A, 17-Jul-17 Document Number: 75951 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR622DP www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 150 - - V - 120 - - -9.7 - Static Drain-source breakdown voltage VDS temperature coefficient ΔVDS/TJ VGS(th) temperature coefficient ΔVGS(th)/TJ Gate-source threshold voltage ID = 250 μA mV/°C VGS(th) VDS = VGS, ID = 250 μA 2.5 - 4.5 V Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 150 V, VGS = 0 V - - 1 VDS = 150 V, VGS = 0 V, TJ = 70 °C - - 10 VDS ≥ 5 V, VGS = 10 V 50 - - VGS = 10 V, ID = 20 A - 0.0147 0.0177 VGS = 7.5 V, ID = 15 A - 0.0170 0.0204 VDS = 10 V, ID = 20 A - 33 - - 1516 - VDS = 75 V, VGS = 0 V, f = 1 MHz - 236 - - 10.5 - VDS = 50 V, VGS = 10 V, ID = 20 A - 27 41 - 20.7 31 VDS = 50 V, VGS = 7.5 V, ID = 20 A - 9.2 - - 8.2 - μA A Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Output charge Qoss VDS = 50 V, VGS = 0 V - 60 90 Gate resistance Rg f = 1 MHz 0.8 1.8 3.5 - 13 25 - 6 12 - 18 36 Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time td(on) tr td(off) VDD = 50 V, RL = 2.5 Ω ID ≅ 20 A, VGEN = 10 V, Rg = 1 Ω tf - 6 12 td(on) - 16 32 - 7 14 - 16 32 - 6 12 tr td(off) VDD = 50 V, RL = 2.5 Ω ID ≅ 20 A, VGEN = 7.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current (t = 100 μs) ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 5 A IF = 20 A, di/dt = 100 A/μs, TJ = 25 °C - - 60 - - 100 - 0.77 1.1 V - 114 225 ns - 350 680 nC - 55 - - 59 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1100-Rev. A, 17-Jul-17 Document Number: 75951 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR622DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 100 10000 10000 VGS = 10 V thru 8 V 40 100 VGS = 6 V 20 1000 60 1st line 2nd line 1000 60 2nd line ID - Drain Current (A) 80 VGS = 7 V 1st line 2nd line 2nd line ID - Drain Current (A) 80 40 TC = 25 °C 100 20 TC = 125 °C TC = -55 °C VGS = 5 V 0 0 10 0 2 4 6 8 10 10 0 2 4 VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 10 Axis Title Axis Title 3500 10000 10000 2800 1st line 2nd line TC = 25 °C 100 Ciss 1400 100 700 20 TC = 125 °C 0 0 10 0 2 4 6 8 Coss Crss TC = -55 °C 10 0 10 20 40 80 VGS - Gate-to-Source Voltage (V) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current Capacitance Axis Title ID = 20 A VDS = 75 V 1000 1st line 2nd line 6 4 100 2 0 10 6 12 18 24 30 2nd line RDS(on) - On-Resistance (Normalized) VDS = 50 V VDS = 25 V 10000 2.5 10000 8 100 Axis Title 10 0 60 ID = 20 A 2.0 VGS = 10 V 1000 1.5 VGS = 7.5 V 100 1.0 0.5 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S17-1100-Rev. A, 17-Jul-17 1st line 2nd line 40 1000 2100 1st line 2nd line 1000 60 2nd line C - Capacitance (pF) 80 2nd line ID - Drain Current (A) 8 VDS - Drain-to-Source Voltage (V) 2nd line 100 2nd line VGS - Gate-to-Source Voltage (V) 6 Document Number: 75951 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR622DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.10 10000 TJ = 150 °C 1000 1 TJ = 25 °C 0.1 100 0.01 0.08 1000 0.06 0.04 1st line 2nd line 2nd line IS - Source Current (A) 2nd line RDS(on) - On-Resistance (Ω) ID = 20 A 10 TJ = 125 °C 100 0.02 TJ = 25 °C 0.001 10 0 0.2 0.4 0.6 0.8 1.0 0 10 5 1.2 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) 2nd line VSD - Source-to-Drain Voltage (V) 2nd line Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title Axis Title 0.6 10000 100 10000 0.3 1000 60 1st line 2nd line ID = 5 mA -0.6 40 100 ID = 250 μA -0.9 1000 2nd line Power (W) -0.3 1st line 2nd line VGS(th) - Variance (V) 80 0 100 20 -1.2 -1.5 10 -50 -25 0 25 50 75 0 0.001 100 125 150 10 0.01 0.1 TJ - Temperature (°C) 2nd line 1 10 Time (s) 2nd line Threshold Voltage Single Pulse Power, Junction-to-Ambient Axis Title 1000 RDS(on) Limited (1) 10000 IDM Limited ID(on) Limited 100 μs 10 1000 1 ms 10 ms 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 100 ms 0.1 TA = 25 °C Single pulse 0.01 100 1s 10 s DC BVDSSLimited 0.001 0.01 (1) 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S17-1100-Rev. A, 17-Jul-17 Document Number: 75951 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR622DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 60 1000 1st line 2nd line 2nd line ID - Drain Current (A) 80 40 100 20 0 10 0 25 50 75 100 125 150 TC - Case (Drain) Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 125 10000 3.0 100 10000 2.4 1.8 1st line 2nd line 50 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 75 1.2 100 25 100 0.6 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S17-1100-Rev. A, 17-Jul-17 Document Number: 75951 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiDR622DP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 54 °C/W 0.02 Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 1 0.2 0.1 1000 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.02 0.1 Single pulse 100 0.01 0.0001 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75951. S17-1100-Rev. A, 17-Jul-17 Document Number: 75951 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8 Double Cooling Case Outline D 8 M1 7 M4 6 K1 5 D1 5 6 K1 7 8 K T3 E T1 E1 T2 H T5 M4 e M3 1 2 3 4 4 2 1 b e A1 c DIM. 3 Back side view A T4 L M2 MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 0.51 0.56 0.61 0.012 0.014 0.016 A1 0.00 0.02 0.05 0.000 0.0008 0.002 b 0.36 0.41 0.46 0.014 0.016 0.018 c 0.15 0.20 0.25 0.006 0.008 0.010 D 4.90 5.00 5.10 0.193 0.197 0.201 D1 3.71 3.76 3.81 0.146 0.148 0.150 e 1.27 BSC MAX. 0.050 BSC E 5.90 6.00 6.10 0.232 0.236 E1 3.60 3.65 3.70 0.142 0.144 0.146 H 0.49 0.54 0.59 0.019 0.021 0.023 K 1.22 1.27 1.32 0.048 0.050 0.052 K1 0.64 typ. 0.240 0.025 typ. L 0.49 0.54 0.59 0.019 0.021 0.023 M1 3.85 3.90 3.95 0.152 0.154 0.156 M2 2.74 2.79 2.84 0.108 0.110 0.112 M3 1.06 1.11 1.16 0.042 0.044 0.046 M4 0.56 typ. N 0.022 typ. 8 8 T1 4.51 4.56 4.61 0.178 0.180 0.182 T2 2.58 2.63 2.68 0.102 0.104 0.106 T3 1.88 1.93 1.98 0.074 0.076 0.078 T4 0.97 typ. 0.038 typ. T5 0.48 typ. 0.019 typ. ECN: T16-0445-Rev. A, 11-Jul-16 DWG: 6048 Revison: 11-Jul-16 Document Number: 75846 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000