SIHF12N50C-E3

SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved 15 Configuration Single TO-220AB TO-220 FULLPAK G D • Compliant to RoHS Directive 2002/95/EC D S D2PAK GD S (TO-263) G S G D N-Channel MOSFET S ORDERING INFORMATION Package TO-220AB D2PAK (TO-263) TO-220 FULLPAK Lead (Pb)-free SiHP12N50C-E3 SiHB12N50C-E3 SiHF12N50C-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) LIMIT TO220-AB SYMBOL D2PAK (TO-263) PARAMETER Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 30 Continuous Drain Current (TJ = 150 °C)a VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currentc Single Pulse Avalanche EAS PD Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d TJ, Tstg for 10 s A 28 1.67 Maximum Power Dissipation V 7.5 IDM Energyb UNIT 12 ID Linear Derating Factor TO-220 FULLPAK 0.28 180 208 mJ 36 - 55 to + 150 300 W/°C W °C Notes a. Limited by maximum junction temperature. b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 12 A. c. Repetitive rating; pulse width limited by maximum junction temperature. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 www.vishay.com 1 SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TO220-AB D2PAK (TO-263) TO-220 FULLPAK Maximum Junction-to-Ambient RthJA 62 65 Maximum Junction-to-Case (Drain) RthJC 0.6 3.5 mount)a RthJA 40 - Junction-to-Ambient (PCB UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V nA Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage (N) Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance IGSS IDSS RDS(on) gfs VGS = ± 30 V - - ± 100 VDS = 500 V, VGS = 0 V - - 50 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 VGS = 10 V - 0.46 0.555 Ω - 3 - S - 1375 - - 165 - - 17 - - 32 48 - 12 - ID = 4 A VDS = 50 V, ID = 3 A μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs VGS = 0 V, VDS = 25 V, f = 1.0 MHz VGS = 10 V ID = 10 A, VDS = 400 V pF nC Gate-Drain Charge Qgd - 15 - Turn-On Delay Time td(on) - 18 - - 35 - - 23 - - 6 - - 1.1 - - - 12 - - 28 - - 1.8 - 580 - ns - 4.3 - μC - 13 - A Rise Time Turn-Off Delay Time tr td(off) Fall Time tf Gate Input Resistance Rg VDD = 250 V, ID = 10 A Rg = 4.3 Ω, VGS = 10 V f = 1 MHz, open drain ns Ω Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Current ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Body Diode Reverse Recovery Current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 10 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V V Note • The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. www.vishay.com 2 Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 25 20 15 35 TJ = 25 °C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 30 10 5 7.0 V 0 25 20 TJ = 150 °C 15 10 5 0 0 5 10 15 20 25 0 30 5 10 15 20 25 VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics (TO-220) Fig. 3 - Typical Transfer Characteristics VGS TJ = 150 °C TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 15 12 9 RDS(on), Drain-to-Source On-Resistance (Normalized) VDS, Drain-to-Source Voltage (V) 18 ID, Drain-to-Source Current (A) TJ = 25 °C 30 7.0 V 6 3 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics (TO-220) Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 3 ID = 12 A 2.5 2 1.5 1 0.5 VGS = 10 V 0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix 100 2400 C, Capacitance (pF) 2000 ISD, Reverse Drain Current (A) VGS = 0 V, f = 1MHz Ciss = Cgs +Cgd Cds SHORTED Crss = Cgd Coss = Cds + Cgd 1600 Ciss 1200 800 Coss 400 Crss TJ = 150 °C TJ = 25 °C 10 1 VGS = 0 V 0.1 0 1 10 100 0.2 1000 0.4 VDS, Drain-to-Source Voltage (V) ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) 1.2 1.4 1.6 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID = 12 A 1 Fig. 7 - Typical Source-Drain Diode Forward Voltage VDS = 400 V VDS = 250 V VDS = 100 V 20 0.8 VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 24 0.6 16 12 8 4 10 100 µs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 10 ms 0.1 0 0 10 20 30 40 50 10 60 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area (TO-220AB, D2PAK) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID, Drain-to-Source Current (A) 1000 10 100 µs 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 10 ms 0.1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area (TO-220 FULLPAK) www.vishay.com 4 Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix VDS RD VDS 90 % VGS D.U.T. RG + - VDD 10 % VGS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % t d(on) tr t d(off) t f Fig. 10b - Switching Time Waveforms Fig. 10a - Switching Time Test Circuit 1 Thermal Response (ZthJC) 0.5 0.1 0.05 0.1 0.02 PDM Single Pulse (Thermal Response) t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 0.001 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220AB, D2PAK) 1 Thermal Response (ZthJC) 0.5 0.2 0.1 PDM 0.1 0.05 t1 t2 0.02 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0.001 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220 FULLPAK) Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 www.vishay.com 5 SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix 15 V QG VGS L VDS Driver QGS D.U.T. RG + A - VDD IAS 20 V tp 0.01 Ω Fig. 13a - Unclamped Inductive Test Circuit QGD VG A Charge Fig. 14a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. V DS 50 kΩ tp 12 V 0.2 µF 0.3 µF D.U.T. + V - DS VGS 3 mA I AS IG ID Current sampling resistors Fig. 13b - Unclamped Inductive Waveforms www.vishay.com 6 Fig. 14b - Gate Charge Test Circuit Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - • • • • RG dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Body diode VDD forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 15 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91388. Document Number: 91388 S10-0969-Rev. B, 26-Apr-10 www.vishay.com 7 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Package Information www.vishay.com Vishay Siliconix TO-220 FULLPAK (High Voltage) OPTION 1: FACILITY CODE = 9 A F G Q1 E D ØR A3 L1 3 x b2 3 x b1 Mold flash bleeding Q L Exposed Cu 3xb 2xe C Bottom view MILLIMETERS DIM. MIN. NOM. A 4.60 4.70 4.80 b 0.70 0.80 0.91 b1 1.20 1.30 1.47 b2 1.10 1.20 1.30 C 0.45 0.50 0.63 D 15.80 15.87 15.97 e MAX. 2.54 BSC E 10.00 10.10 F 2.44 2.54 10.30 2.64 G 6.50 6.70 6.90 L 12.90 13.10 13.30 L1 3.13 3.23 3.33 Q 2.65 2.75 2.85 Q1 3.20 3.30 3.40 ØR 3.08 3.18 3.28 Notes 1. To be used only for process drawing 2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads 3. All critical dimensions should C meet Cpk > 1.33 4. All dimensions include burrs and plating thickness 5. No chipping or package damage 6. Facility code will be the 1st character located at the 2nd row of the unit marking Revision: 08-Apr-2019 Document Number: 91359 1 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix OPTION 2: FACILITY CODE = Y A A1 E ØP n d1 d3 D u L1 V L b3 A2 b2 c b MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.570 4.830 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 e 2.54 BSC 0.419 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 ØP 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 V 0.400 0.500 0.016 0.020 ECN: E19-0180-Rev. D, 08-Apr-2019 DWG: 5972 Notes 1. To be used only for process drawing 2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads 3. All critical dimensions should C meet Cpk > 1.33 4. All dimensions include burrs and plating thickness 5. No chipping or package damage 6. Facility code will be the 1st character located at the 2nd row of the unit marking Revision: 08-Apr-2019 Document Number: 91359 2 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000