SIHH28N60E-T1-GE3

SiHH28N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES Pin 4 • Completely lead (Pb)-free device PowerPAK® 8 x 8 • Low figure-of-merit (FOM) Ron x Qg Pin 1 • Low input capacitance (Ciss) 4 • Reduced switching and conduction losses Pin 2 1 • Ultra low gate charge (Qg) 2 • Avalanche energy rated (UIS) 3 3 Pin 3 N-Channel MOSFET • Kelvin connection for reduced gate noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. (Ω) at 25 °C APPLICATIONS 650 VGS = 10 V • Server and telecom power supplies 0.085 129 • Switch mode power supplies (SMPS) Qgs (nC) 20 • Power factor correction power supplies (PFC) Qgd (nC) 44 • Lighting Qg max. (nC) Configuration Single - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) ORDERING INFORMATION Package PowerPAK 8 x 8 Lead (Pb)-free and halogen-free SiHH28N60E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 600 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain current a ID UNIT V 29 19 A IDM 76 1.6 W/°C Single pulse avalanche energy b EAS 353 mJ Maximum power dissipation PD 202 W TJ, Tstg -55 to +150 °C Linear derating factor Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dV/dt c dV/dt 70 13 V/ns Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 Ω, IAS = 5 A c. ISD ≤ ID, dI/dt = 100 A/μs, starting TJ = 25 °C S17-0780-Rev. C, 22-May-17 Document Number: 91932 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH28N60E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA 38 50 Maximum junction-to-case (Drain) RthJC 0.48 0.62 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VGS = 0 V, ID = 250 μA 600 - - V ΔVDS/TJ Reference to 25 °C, ID = 10 mA - 0.58 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 10 Gate-source leakage IGSS Zero gate voltage drain current IDSS Drain-source on-state resistance Forward transconductance μA - 0.085 0.098 Ω gfs VDS = 30 V, ID = 14 A - 7.6 - S VGS = 0 V, VDS = 100 V, f = 1 MHz - 2614 - - 125 - - 5 - - 86 - - 444 - - 86 129 - 20 - RDS(on) VGS = 10 V ID = 14 A Dynamic Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Effective output capacitance, energy related a Co(er) Effective output capacitance, time related b Co(tr) pF VDS = 0 V to 480 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs VGS = 10 V ID = 10 A, VDS = 480 V Gate-drain charge Qgd - 44 - Turn-on delay time td(on) - 29 58 VDD = 480 V, ID = 14 A, VGS = 10 V, Rg = 9.1 Ω - 75 113 - 84 126 - 54 81 f = 1 MHz 0.2 0.5 1.0 - - 29 - - 76 Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg nC ns Ω Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 14 A, VGS = 0 V TJ = 25 °C, IF = IS = 14 A, dI/dt = 100 A/μs, VR = 25 V S - 0.9 1.2 V - 386 772 ns - 6 12 μC - 25 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDS S17-0780-Rev. C, 22-May-17 Document Number: 91932 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH28N60E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 3.0 80 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 60 ID = 14 A TJ = 25 °C RDS(on), Drain-to-Source On-Resistance (Normalized) 40 20 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) -60 -40 -20 20 50 100 000 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 30 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd TJ = 150 °C 10 000 Ciss C, Capacitance (pF) 40 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics ID, Drain-to-Source Current (A) 2.5 20 1000 Coss 100 10 Crss 10 0 1 0 5 10 15 VDS, Drain-to-Source Voltage (V) 20 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 80 18 Coss, Output Capacitance (pF) ID, Drain-to-Source Current (A) 16 5000 TJ = 25 °C 60 TJ = 150 °C 40 20 14 12 10 Eoss Coss 8 500 6 4 2 VDS = 27 V 50 0 0 5 10 15 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S17-0780-Rev. C, 22-May-17 20 Eoss, Output Capacitance stored Energy (μJ) ID, Drain-to-Source Current (A) TOP 0 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 6 - COSS and EOSS vs. VDS Document Number: 91932 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH28N60E www.vishay.com Vishay Siliconix 30 VDS = 480 V VDS = 300 V VDS = 120 V 24 9 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 12 6 18 12 3 6 0 0 0 20 40 60 80 Qg, Total Gate Charge (nC) 25 100 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 775 TJ = 150 °C 10 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 100 TJ = 25 °C 1 VGS = 0 V 0.1 0.2 0.6 1.0 1.4 VSD, Source-Drain Voltage (V) 1.8 Fig. 8 - Typical Source-Drain Diode Forward Voltage Operation in this area limited by RDS(on) ID, Drain Current (A) 100 750 725 700 675 650 625 600 ID = 250 μA 575 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage IDM limited 10 100 μs Limited by RDS(on)* 1 1 ms 10 ms 0.1 TC = 25 °C TJ = 150 °C Single pulse BVDSS limited 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S17-0780-Rev. C, 22-May-17 Document Number: 91932 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH28N60E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.001 0.000001 0.00001 0.0001 0.001 Pulse Time (s) 0.01 0.1 1 Normalized Thermal Trransient Impedance, RthJA Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case 1 Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.001 Single pulse 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Time (s) Fig. 13 - Normalized Thermal Transient Impedance, Junction-to-Ambient VDS VGS L RD Vary tp to obtain required IAS VDS D.U.T. RG D.U.T RG + - VDD + - IAS 10 V V DD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 0.01 Ω tp Fig. 14 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Test Circuit VDS VDS tp 90 % VDD VDS 10 % VGS td(on) tr td(off) tf Fig. 15 - Switching Time Waveforms S17-0780-Rev. C, 22-May-17 IAS Fig. 17 - Unclamped Inductive Waveforms Document Number: 91932 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHH28N60E www.vishay.com Vishay Siliconix Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 18 - Basic Gate Charge Waveform Fig. 19 - Gate Charge Test Circuit Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 20 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91932. S17-0780-Rev. C, 22-May-17 Document Number: 91932 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer  ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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