SIHP11N80E-BE3

SiHP11N80E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES D • Low figure-of-merit (FOM) Ron x Qg TO-220AB • Low input capacitance (Ciss) • Reduced switching and conduction losses • Ultra low gate charge (Qg) G Available • Avalanche energy rated (UIS) G D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S S N-Channel MOSFET APPLICATIONS • • • • Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting - High-intensity discharge (HID) - Fluorescent ballast lighting • Industrial - Welding - Induction heating - Motor drives - Battery chargers - Renewable energy - Solar (PV inverters) PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C 850 VGS = 10 V Qg max. (nC) 0.38 88 Qgs (nC) 9 Qgd (nC) 16 Configuration Single ORDERING INFORMATION Package TO-220AB SiHP11N80E-BE3 a Lead (Pb)-free and halogen-free SiHP11N80E-GE3 Note a. “-BE3” denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 800 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) Pulsed drain VGS at 10 V TC = 25 °C TC = 100 °C current a ID IDM Linear derating factor UNIT V 12 8 A 32 1.4 W/°C mJ Single pulse avalanche energy b EAS 226 Maximum power dissipation PD 179 W TJ, Tstg -55 to +150 °C Operating junction and storage temperature range Drain-source voltage slope TJ = 125 °C Reverse diode dV/dt d Soldering recommendations (peak temperature) c For 10 s dV/dt 70 4.3 300 V/ns °C Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. VDD = 140 V, starting TJ = 25 °C, L = 28.2 mH, Rg = 25 , IAS = 4.0 A c. 1.6 mm from case d. ISD  ID, dI/dt = 100 A/μs, starting TJ = 25 °C S22-0949-Rev. C, 21-Nov-2022 Document Number: 91933 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP11N80E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Maximum junction-to-case (drain) RthJC - 0.7 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VGS = 0 V, ID = 250 μA 800 - - V VDS/TJ Reference to 25 °C, ID = 1 mA - 1.1 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2 - 4 V VGS = ± 20 V - - ± 100 nA VGS = ± 30 V - - ±1 μA VDS = 800 V, VGS = 0 V - - 1 VDS = 640 V, VGS = 0 V, TJ = 125 °C - - 10 Gate-source leakage IGSS Zero gate voltage drain current IDSS μA - 0.38 0.44  gfs VDS = 30 V, ID = 5.5 A - 4.5 - S Input capacitance Ciss 1670 - Coss - 68 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 100 V, f = 1 MHz - Output capacitance - 9 - Effective output capacitance, energy related a Co(er) - 43 - Effective output capacitance, time  related b Co(tr) - 212 - - 44 88 - 9 - Drain-source on-state resistance Forward transconductance RDS(on) VGS = 10 V ID = 5.5 A Dynamic pF VDS = 0 V to 480 V, VGS = 0 V Total gate charge Qg Gate-source charge Qgs VGS = 10 V ID = 5.5 A, VDS = 480 V Gate-drain charge Qgd - 16 - Turn-on delay time td(on) - 18 36 VDD = 480 V, ID = 5.5 A, VGS = 10 V, Rg = 9.1  - 15 30 - 55 110 - 18 36 f = 1 MHz, open drain 0.4 0.9 1.8 - - 12 - - 32 Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg nC ns  Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRRM MOSFET symbol showing the  integral reverse p - n junction diode D A G TJ = 25 °C, IS = 5.5 A, VGS = 0 V TJ = 25 °C, IF = IS = 5.5 A, dI/dt = 100 A/μs, VR = 25 V S - - 1.2 V - 345 690 ns - 4.2 8.4 μC - 21 - A Notes a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS S22-0949-Rev. C, 21-Nov-2022 Document Number: 91933 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP11N80E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 35 3.0 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 28 21 14 7 0 2.5 2.0 1.5 1.0 VGS = 10 V 0.5 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) 20 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Fig. 1 - Typical Output Characteristics 10 000 18 TOP 15 V 14 V 13 V 12 V 11 V 10 V 9V 8V 7V 6V BOTTOM 5 V 12 TJ = 150 °C Ciss 1000 C, Capacitance (pF) 15 9 6 VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds shorted Crss = Cgd Coss = Cds + Cgd 100 Coss Crss 10 3 1 0 0 5 10 15 VDS, Drain-to-Source Voltage (V) 0 20 100 200 300 400 500 600 VDS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 2 - Typical Output Characteristics 9 10 000 35 8 28 Coss, Output Capacitance (pF) ID, Drain-to-Source Current (A) TJ = 25 °C 21 TJ = 150 °C 14 7 7 1000 6 5 Eoss Coss 4 100 3 2 1 VDS = 30.2 V 10 0 0 5 10 15 VGS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics S22-0949-Rev. C, 21-Nov-2022 20 Eoss, Output Capacitance Stored Energy (μJ) ID, Drain-to-Source Current (A) ID = 5.5 A TJ = 25 °C RDS(on), Drain-to-Source On-Resistance (Normalized) ID, Drain-to-Source Current (A) TOP 0 0 100 200 300 400 500 VDS, Drain-to-Source Voltage (V) 600 Fig. 6 - Coss and Eoss vs. VDS Document Number: 91933 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP11N80E www.vishay.com Vishay Siliconix 12 VDS = 480 V VDS = 300 V VDS = 120 V 9 9 ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 12 6 6 3 3 0 0 0 15 30 45 Qg, Total Gate Charge (nC) 25 60 Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 50 75 100 125 TC, Case Temperature (°C) 150 Fig. 10 - Maximum Drain Current vs. Case Temperature 975 VDS, Drain-to-Source Breakdown Voltage (V) ISD, Reverse Drain Current (A) 100 TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0 0.4 0.8 1.2 VSD, Source-Drain Voltage (V) 1.6 Fig. 8 - Typical Source-Drain Diode Forward Voltage Operation in this area limited by RDS(on) ID, Drain Current (A) 100 950 925 900 875 850 825 800 775 750 725 ID = 250 μA 700 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 11 - Temperature vs. Drain-to-Source Voltage IDM limited 10 100 μs Limited by RDS(on)* 1 1 ms 0.1 TC = 25 °C TJ = 150 °C single pulse 10 ms BVDSS limited 0.01 1 10 100 1000 VDS, Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Fig. 9 - Maximum Safe Operating Area S22-0949-Rev. C, 21-Nov-2022 Document Number: 91933 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP11N80E www.vishay.com Vishay Siliconix 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single pulse 0.01 0.0001 0.001 0.01 Pulse Time (s) 0.1 1 Fig. 12 - Normalized Thermal Transient Impedance, Junction-to-Case RD VDS VDS tp VGS D.U.T. VDD Rg + - VDD VDS 10 V Pulse width ≤ 1 μs Duty factor ≤ 0.1 % IAS Fig. 13 - Switching Time Test Circuit Fig. 16 - Unclamped Inductive Waveforms VDS Qg 10 V 90 % Qgs 10 % VGS Qgd VG td(on) td(off) tr tf Charge Fig. 14 - Switching Time Waveforms Fig. 17 - Basic Gate Charge Waveform Current regulator Same type as D.U.T. L VDS Vary tp to obtain required IAS 50 kΩ D.U.T. Rg 12 V 0.2 μF 0.3 μF + - VDD + D.U.T. IAS - VDS 10 V tp 0.01 Ω VGS 3 mA Fig. 15 - Unclamped Inductive Test Circuit IG ID Current sampling resistors Fig. 18 - Gate Charge Test Circuit S22-0949-Rev. C, 21-Nov-2022 Document Number: 91933 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP11N80E www.vishay.com Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 - - 4 + 1 Rg • • • • 1 Driver gate drive Period P.W. + V - DD dv/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T. VDS Body diode forward current di/dt waveform Diode recovery dv/dt Re-applied voltage V DD Body diode forward drop 4 Inductor current Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 19 - For N-Channel           Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91933. S22-0949-Rev. C, 21-Nov-2022 Document Number: 91933 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2023 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000