SIHP16N50C-E3

SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET TO-220AB TO-220 FULLPAK FEATURES D • Low figure-of-merit Ron x Qg Available • 100 % avalanche tested G D Available S GD S • Gate charge improved G D2PAK (TO-263) • trr/Qrr improved • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S G D N-Channel MOSFET S Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details PRODUCT SUMMARY VDS (V) at TJ max. 560 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.38 68 Qgs (nC) 17.6 Qgd (nC) 21.8 Configuration Single ORDERING INFORMATION Package Lead (Pb)-free Lead (Pb)-free and halogen-free TO-220AB D2PAK (TO-263) TO-220 FULLPAK SiHP16N50C-E3 SiHB16N50C-E3 SiHF16N50C-E3 - SiHB16N50CTR-E3 - - SiHB16N50CTL-E3 - SiHP16N50C-BE3 - - ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 500 Gate-source voltage VGS ± 30 Continuous drain current (TJ = 150 °C) a VGS at 10 V TC = 25 °C TC = 100 °C Pulsed drain currentc ID IDM Linear derating factor Single pulse avalanche energy b EAS TO220-AB, D2PAK (TO-263) Maximum power dissipation TO-220 FULLPAK TJ, Tstg Operating junction and storage temperature range Soldering recommendations (peak temperature) d PD For 10 s UNIT V 16 10 A 40 2 W/°C 320 mJ 250 38 W -55 to +150 300 °C Notes a. Limited by maximum junction temperature b. VDD = 50 V, starting TJ = 25 °C, L = 2.5 mH, Rg = 25 Ω, IAS = 16 A c. Repetitive rating; pulse width limited by maximum junction temperature d. 1.6 mm from case S21-1104-Rev. C, 15-Nov-2021 Document Number: 91401 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL TO220-AB D2PAK (TO-263) TO-220 FULLPAK Maximum junction-to-ambient RthJA 62 65 Maximum junction-to-case (drain) RthJC 0.5 3.3 Junction-to-ambient (PCB mount) a RthJA 40 - PARAMETER UNIT °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage (N) VDS VGS = 0 V, ID = 250 μA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.6 - V/°C VGS(th) VDS = VGS, ID = 250 μA 3.0 - 5.0 V Gate-source leakage IGSS VGS = ± 30 V - - ± 100 nA Zero gate voltage drain current IDSS VDS = 500 V, VGS = 0 V - - 50 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 VGS = 10 V μA - 0.31 0.38 Ω gfs VDS = 50 V, ID = 3 A - 3 - S Input capacitance Ciss 1900 - Coss - 230 - Reverse transfer capacitance Crss VGS = 0 V, VDS = 25 V, f = 1.0 MHz - Output capacitance - 24 - - 45 68 - 18 - Drain-source on-state resistance Forward transconductance a RDS(on) ID = 8 A Dynamic Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd - 22 - Turn-on delay time td(on) - 27 - Rise time Turn-off delay time tr td(off) Fall time tf Gate input resistance Rg VGS = 10 V ID = 16 A, VDS = 400 V pF nC VDD = 250 V, ID = 16 A, Rg = 9.1 Ω, VGS = 10 V - 156 - - 29 - - 31 - f = 1 MHz, open drain - 1.6 - - - 16 - - 30 - - 1.8 - 555 - ns - 5.5 - μC - 18 - A ns Ω Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulsed diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Body diode reverse recovery current IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 10 A, VGS = 0 V TJ = 25 °C, IF = IS, dI/dt = 100 A/μs, VR = 20 V V Note • The information shown here is a preliminary product proposal, not a commercial product data sheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products S21-1104-Rev. C, 15-Nov-2021 Document Number: 91401 2 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 45 50 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V TOP 40 35 30 25 TJ = 25 °C 20 15 10 5 7.0 V 0 0 5 10 15 20 40 35 30 25 20 15 TJ = 150 °C 10 TJ = 25 °C 5 0 25 0 30 2 4 6 8 10 12 14 16 18 20 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics (TO-220) Fig. 3 - Typical Transfer Characteristics 30 ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 45 VGS TJ = 150 °C TOP 15 V 14 V 13 V 12 V 11 V 10 V 9.0 V 8.0 V 7.0 V 6.0 V BOTTOM 5.0 V 25 20 15 RDS(on), Drain-to-Source On-Resistance (Normalized) ID, Drain-to-Source Current (A) VGS 10 7.0 V 5 0 0 5 10 15 20 25 30 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics (TO-220) S21-1104-Rev. C, 15-Nov-2021 3 ID = 16 A 2.5 2 1.5 1 0.5 VGS = 10 V 0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91401 3 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com 2800 100 ISD, Reverse Drain Current (A) VGS = 0 V, f = 1MHz Ciss = Cgs +Cgd Cds SHORTED Crss = Cgd Coss = Cds + Cgd 2400 C, Capacitance (pF) Vishay Siliconix 2000 Ciss 1600 1200 Coss 800 400 Crss TJ = 150 °C 10 TJ = 25 °C 1 VGS = 0 V 0.1 0 1 10 100 0.2 1000 0.4 VDS, Drain-to-Source Voltage (V) 1.2 1.4 1.6 OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID, Drain-to-Source Current (A) VGS, Gate-to-Source Voltage (V) ID = 16 A 1 Fig. 7 - Typical Source-Drain Diode Forward Voltage VDS = 400 V VDS = 250 V VDS = 100 V 20 0.8 VSD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 24 0.6 16 12 8 4 100 µs 10 1 ms 10 ms 1 TTTTCCCC====25 25 25 25°C °C °C °C 150 150 150°C °C °C °C TTTTJJJJ====150 Single Single Single SinglePulse Pulse Pulse Pulse 0.1 0 0 20 40 60 10 80 100 VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig. 1 - Maximum Safe Operating Area (TO-220AB, D2PAK) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY RDS(on) 100 ID, Drain-to-Source Current (A) 1000 100 µs 10 1 ms 1 TC = 25 °C TJ = 150 °C Single Pulse 10 ms 0.1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig. 2 - Maximum Safe Operating Area (TO-220 FULLPAK) S21-1104-Rev. C, 15-Nov-2021 Document Number: 91401 4 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com VDS Vishay Siliconix RD VDS 90 % VGS D.U.T. RG + - VDD 10 % VGS 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % t d(on) tr t d(off) t f Fig. 10b - Switching Time Waveforms Fig. 10a - Switching Time Test Circuit 1 Thermal Response (ZthJC) 0.5 0.2 0.1 0.1 PDM 0.05 0.02 t1 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0.01 10-4 10-3 10-2 0.1 1 t1, Rectangular Pulse Duration (s) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220AB, D2PAK) 1 Thermal Response (ZthJC) 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0.01 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 3 - Maximum Effective Transient Thermal Impedance, Junction-to-Case (TO-220 FULLPAK) S21-1104-Rev. C, 15-Nov-2021 Document Number: 91401 5 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix 15 V QG VGS L VDS Driver QGS D.U.T. RG + A - VDD IAS 20 V tp QGD VG A 0.01 Ω Charge Fig. 13a - Unclamped Inductive Test Circuit Fig. 14a - Basic Gate Charge Waveform Current regulator Same type as D.U.T. V DS 50 kΩ tp 12 V 0.2 µF 0.3 µF D.U.T. + V - DS VGS 3 mA I AS IG ID Current sampling resistors Fig. 13b - Unclamped Inductive Waveforms S21-1104-Rev. C, 15-Nov-2021 Fig. 14b - Gate Charge Test Circuit Document Number: 91401 6 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive Period P.W. D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current D.U.T. VDS Body diode forward current dI/dt waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 15 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91401. S21-1104-Rev. C, 15-Nov-2021 Document Number: 91401 7 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.095 0.115 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: E21-0621-Rev. D, 04-Nov-2021 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM Document Number: 66542 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 04-Nov-2021 Package Information www.vishay.com Vishay Siliconix TO-220 FULLPAK (High Voltage) OPTION 1: FACILITY CODE = 9 A F G Q1 E D ØR A3 L1 3 x b2 3 x b1 Mold flash bleeding Q L Exposed Cu 3xb 2xe C Bottom view MILLIMETERS DIM. MIN. NOM. A 4.60 4.70 4.80 b 0.70 0.80 0.91 b1 1.20 1.30 1.47 b2 1.10 1.20 1.30 C 0.45 0.50 0.63 D 15.80 15.87 15.97 e MAX. 2.54 BSC E 10.00 10.10 F 2.44 2.54 10.30 2.64 G 6.50 6.70 6.90 L 12.90 13.10 13.30 L1 3.13 3.23 3.33 Q 2.65 2.75 2.85 Q1 3.20 3.30 3.40 ØR 3.08 3.18 3.28 Notes 1. To be used only for process drawing 2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads 3. All critical dimensions should C meet Cpk > 1.33 4. All dimensions include burrs and plating thickness 5. No chipping or package damage 6. Facility code will be the 1st character located at the 2nd row of the unit marking Revision: 08-Apr-2019 Document Number: 91359 1 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix OPTION 2: FACILITY CODE = Y A A1 E ØP n d1 d3 D u L1 V L b3 A2 b2 c b MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. A 4.570 4.830 0.180 0.190 A1 2.570 2.830 0.101 0.111 A2 2.510 2.850 0.099 0.112 b 0.622 0.890 0.024 0.035 b2 1.229 1.400 0.048 0.055 b3 1.229 1.400 0.048 0.055 c 0.440 0.629 0.017 0.025 D 8.650 9.800 0.341 0.386 d1 15.88 16.120 0.622 0.635 d3 12.300 12.920 0.484 0.509 E 10.360 10.630 0.408 e 2.54 BSC 0.419 0.100 BSC L 13.200 13.730 0.520 0.541 L1 3.100 3.500 0.122 0.138 n 6.050 6.150 0.238 0.242 ØP 3.050 3.450 0.120 0.136 u 2.400 2.500 0.094 0.098 V 0.400 0.500 0.016 0.020 ECN: E19-0180-Rev. D, 08-Apr-2019 DWG: 5972 Notes 1. To be used only for process drawing 2. These dimensions apply to all TO-220 FULLPAK leadframe versions 3 leads 3. All critical dimensions should C meet Cpk > 1.33 4. All dimensions include burrs and plating thickness 5. No chipping or package damage 6. Facility code will be the 1st character located at the 2nd row of the unit marking Revision: 08-Apr-2019 Document Number: 91359 2 For technical questions, contact: hvmos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix TO-263AB (HIGH VOLTAGE) A (Datum A) 3 A 4 4 L1 B A E c2 H Gauge plane 4 0° to 8° 5 D B Detail A Seating plane H 1 2 C 3 C L L3 L4 Detail “A” Rotated 90° CW scale 8:1 L2 B A1 B A 2 x b2 c 2xb E 0.010 M A M B ± 0.004 M B 2xe Plating 5 b1, b3 Base metal c1 (c) D1 4 5 (b, b2) Lead tip MILLIMETERS DIM. MIN. MAX. View A - A INCHES MIN. 4 E1 Section B - B and C - C Scale: none MILLIMETERS MAX. DIM. MIN. INCHES MAX. MIN. MAX. A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - A1 0.00 0.25 0.000 0.010 E 9.65 10.67 0.380 0.420 6.22 - 0.245 - b 0.51 0.99 0.020 0.039 E1 b1 0.51 0.89 0.020 0.035 e b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 L 1.78 2.79 0.070 0.110 2.54 BSC 0.100 BSC c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 c1 0.38 0.58 0.015 0.023 L2 - 1.78 - 0.070 c2 1.14 1.65 0.045 0.065 L3 D 8.38 9.65 0.330 0.380 L4 0.25 BSC 4.78 5.28 0.010 BSC 0.188 0.208 ECN: S-82110-Rev. A, 15-Sep-08 DWG: 5970 Notes 1. Dimensioning and tolerancing per ASME Y14.5M-1994. 2. Dimensions are shown in millimeters (inches). 3. Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body at datum A. 4. Thermal PAD contour optional within dimension E, L1, D1 and E1. 5. Dimension b1 and c1 apply to base metal only. 6. Datum A and B to be determined at datum plane H. 7. Outline conforms to JEDEC outline to TO-263AB. Document Number: 91364 Revision: 15-Sep-08 www.vishay.com 1 AN826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR D2PAK: 3-Lead 0.420 0.355 0.635 (16.129) (9.017) (10.668) 0.145 (3.683) 0.135 (3.429) 0.200 0.050 (5.080) (1.257) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Document Number: 73397 11-Apr-05 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000