SIJH440E-T1-GE3

SiJH440E www.vishay.com Vishay Siliconix N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® 8 x 8L Single • TrenchFET® Gen IV power MOSFET • Fully lead (Pb)-free device • Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss • Up to 200 A maximum continuous drain current • 50 % smaller footprint than D2PAK / TO-263 • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D 8 m m 1 8.1 mm Top View 4 S 3 S 2 S 1 G Bottom View APPLICATIONS PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 10 V RDS(on) max. () at VGS = 4.5 V Qg typ. (nC) ID (A) a, g Configuration D • Synchronous rectification 40 0.00096 0.00115 127 200 Single • OR-ing G • Motor drive control • Battery management N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 8 x 8L SiJH440E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) SYMBOL VDS VGS TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Pulsed drain current (t = 100 μs) ID IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA =70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg LIMIT 40 +20 / -16 200 a 200 a 40 b 33.8 b 500 160 2.67 b, c 60 180 158 110 3b 2.1 b -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b Steady state RthJA 42 50 °C/W 0.8 0.95 Maximum junction-to-case (drain) Steady state RthJC Notes a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 50 °C/W. g. TC = 25 °C. S16-2149-Rev. A, 17-Oct-16 Document Number: 76206 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH440E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 250 μA 40 - - VDS/TJ ID = 10 mA - 24 - VGS(th) temperature coefficient VGS(th)/TJ ID = 250 μA - -6.6 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID =250 μA 1 - 2.3 V Gate-source leakage IGSS VDS = 0 V, VGS = +20 / -16 V - - 100 nA Zero gate voltage drain current IDSS On-state drain current a ID(on) Drain-source on-state resistance a Forward transconductance a RDS(on) gfs VDS = 40 V, VGS =0 V - - 1 VDS = 40 V, VGS = 0 V, TJ = 70 °C - - 15 VDS  10 V, VGS =10 V 60 - - A  VGS = 10 V, ID = 20 A - 0.00080 0.00096 VGS = 4.5 V, ID = 20 A - 0.00096 0.00115 VDS = 15 V, ID = 20 A - 140 - - 20 330 - - 2920 - - 820 - - 279 420 μA S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 20 V, VGS = 0 V, f = 1 MHz VDS = 20 V, VGS = 10 V, ID = 20 A - 127 195 VDS = 20 V, VGS = 4.5 V, ID =20 A - 64 - - 24.5 - f = 1 MHz 0.5 1.7 3.0 - 28 56 td(on) tr VDD = 20 V, RL = 10 , ID  20 A, VGEN = 10 V, Rg = 1  - 35 70 - 105 210 tf - 30 60 td(on) - 140 280 td(off) tr td(off) VDD = 20 V, RL = 1 , ID  20 A, VGEN = 4.5 V, Rg = 1  tf - 290 580 - 78 156 - 53 106 pF nC  ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD TC = 25 °C IS = 5 A, VGS = 0 V - - 160 - - 300 - 0.68 1.1 A V Body diode reverse recovery time trr - 92 184 ns Body diode reverse recovery charge Qrr - 245 490 nC Reverse recovery fall time ta - 54 - Reverse recovery rise time tb - 38 - IF = 20 A, dI/dt = 100 A/μs, TJ = 25 °C ns Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing.  Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S16-2149-Rev. A, 17-Oct-16 Document Number: 76206 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH440E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 200 250 10000 10000 VGS = 10 V thru 4 V 80 VGS = 3 V 100 40 1000 150 1st line 2nd line 1000 120 2nd line ID - Drain Current (A) 200 1st line 2nd line 2nd line ID - Drain Current (A) 160 TC = 25 °C 100 100 TC = 125 °C 50 TC = -55 °C VGS = 2 V 0 0 10 0 0.5 1 1.5 2 10 0 2.5 1 2 3 4 VDS - Drain-to-Source Voltage (V) 2nd line VGS - Gate-to-Source Voltage (V) 2nd line Output Characteristics Transfer Characteristics 5 Axis Title Axis Title 25000 10000 0.0011 10000 VGS = 4.5 V 0.0008 0.0007 100 VGS = 10 V 1000 15000 Coss 10000 100 5000 0.0006 0.0005 10 0 20 40 60 80 1st line 2nd line 1000 0.0009 2nd line C - Capacitance (pF) 20000 Crss 0 10 0 100 5 10 20 ID - Drain Current (A) 2nd line VDS - Drain-to-Source Voltage (V) 2nd line On-Resistance vs. Drain Current and Gate Voltage Capacitance 1.6 ID = 20 A 8 1000 1st line 2nd line 6 VDS = 10 V, 20 V, 30 V 100 2 0 10 0 60 120 180 240 300 2nd line RDS(on) - On-Resistance (Normalized) 10000 4 25 Axis Title Axis Title 10 2nd line VGS - Gate-to-Source Voltage (V) 15 10000 ID = 20 A VGS = 10 V 1.4 1000 1.2 VGS = 4.5 V 1.0 100 0.8 0.6 10 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) 2nd line TJ - Junction Temperature (°C) 2nd line Gate Charge On-Resistance vs. Junction Temperature S16-2149-Rev. A, 17-Oct-16 1st line 2nd line 0.0010 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) Ciss Document Number: 76206 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH440E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 100 0.5 10000 0.2 2nd line VGS(th) - Variance (V) 1000 1 TJ = 25 °C 0.1 100 1000 -0.1 ID = 5 mA -0.4 100 0.01 ID = 250 μA -0.7 0.001 -1.0 10 0 0.2 0.4 0.6 0.8 1.0 10 -50 1.2 -25 0 25 50 75 100 125 150 VSD - Source-to-Drain Voltage (V) 2nd line TJ - Temperature (°C) 2nd line Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 0.005 400 10000 0.004 10000 320 1000 2nd line Power (W) 1000 0.002 240 1st line 2nd line 0.003 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 1st line 2nd line TJ = 150 °C 1st line 2nd line 2nd line IS - Source Current (A) 10 10000 160 100 TJ = 125 °C 100 0.001 80 TJ = 25 °C 0 0 0.001 10 0 2 4 6 8 10 10 0.01 0.1 1 10 VGS - Gate-to-Source Voltage (V) 2nd line Time (s) 2nd line On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title 100 2nd line ID - Drain Current (A) 10000 IDM limited ID limited 100 μs 1 ms 10 Limited by RDS(on) 1000 10 ms 100 ms (1) 1 1st line 2nd line 1000 1 s 100 10 s 0.1 DC TA = 25 °C Single pulse 0.01 0.01 (1) BVDSS limited 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient S16-2149-Rev. A, 17-Oct-16 Document Number: 76206 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH440E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 400 10000 1000 240 1st line 2nd line 2nd line ID - Drain Current (A) 320 160 Package limited 100 80 0 10 0 25 50 75 100 125 150 TC - Case Temperature (°C) 2nd line Current Derating a Axis Title Axis Title 200 10000 3.0 160 10000 2.4 1.8 1st line 2nd line 80 2nd line Power (W) 1000 1st line 2nd line 2nd line Power (W) 1000 120 1.2 100 40 100 0.6 0 10 0 25 50 75 100 125 150 0 10 0 25 50 75 100 125 TC - Case Temperature (°C) 2nd line TA - Ambient Temperature (°C) 2nd line Power, Junction-to-Case Power, Junction-to-Ambient 150 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S16-2149-Rev. A, 17-Oct-16 Document Number: 76206 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH440E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 10000 Duty Cycle = 0.5 Notes: 0.2 PDM 0.1 0.1 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 t1 0.05 t2 t 1. Duty cycle, D = t1 2 2. Per unit base = RthJA = 50 °C/W 0.02 Single pulse 3. TJM - TA = PDMZthJA 100 (t) 4. Surface mounted 0.01 0.0001 0.001 0.01 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 1 0.2 1000 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.05 0.1 0.02 Single pulse 0.01 0.00001 100 10 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case                     Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?76206. S16-2149-Rev. A, 17-Oct-16 Document Number: 76206 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L Case Outline D2 E5 L1 D3 K D3 D7 D5 D5 D7 D5 E1 E W3 W2 W1 D5 E2 E3 b2 K F Bottom view (single) 0.25 Gauge line Top view (single) E5 L θ e W4 D1 D E4 E1 E b1 D5 D4 A2 A1 b D6 E2 E3 W4 D6 W W3 W2 W1 D5 E4 b2 D4 b b1 D1 D e Bottom view (dual) DIM. A C A3 Top view (dual) MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.70 1.80 1.90 0.067 0.071 MAX. 0.075 A1 0.00 0.08 0.13 0.000 0.003 0.005 A2 0.25 0.30 0.35 0.010 0.012 0.014 A3 0.55 0.62 0.70 0.022 0.024 0.028 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 7.80 7.90 8.00 0.307 0.311 0.315 c 0.20 0.25 0.30 0.008 0.010 0.012 D 8.00 8.10 8.25 0.315 0.319 0.325 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D3 2.85 2.95 3.05 0.112 0.116 0.120 D4 6.11 6.21 6.31 0.241 0.244 0.248 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 D7 1.76 1.86 1.96 0.069 0.073 0.077 Revision: 16-Oct-17 Document Number: 67734 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. e 1.95 2.00 2.05 0.077 0.079 0.081 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 3.94 4.04 4.14 0.140 0.159 0.163 E3 4.69 4.79 4.89 0.185 0.189 0.193 E4 3.23 3.33 3.43 0.127 0.131 0.135 E5 0.65 0.75 0.85 0.026 0.030 0.033 F 0.00 0.10 0.15 0.000 0.004 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.80 0.90 1.00 0.031 0.035 0.039 W 0.30 0.40 0.50 0.012 0.016 0.020 W1 0.30 0.40 0.50 0.012 0.016 0.020 W2 4.39 4.49 4.59 0.173 0.177 0.181 W3 4.54 4.64 4.74 0.179 0.183 0.187 W4 0.32 0.37 0.42 0.013 0.015 0.017  6° 10° 14° 6° 10° 14° C17-1388-Rev. B, 16-Oct-17 DWG: 6026 Revision: 16-Oct-17 Document Number: 67734 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 PAD Pattern www.vishay.com Vishay Siliconix Recommended Minimum PADs for PowerPAK® 8 x 8L Single 8.00 (0.31) 0.50 (0.02) 4.05 (0.16) 3.55 (0.14) Y 3.99 (0.16) 4.59 (0.18) 6.90 (0.27) (0, 0) 0.44 (0.02) X 0.54 (0.02) 0.85 (0.03) 6.11 (0.24) 1.29 (0.05) 1.94 (0.08) 8.25 (0.32) 3.23 (0.13) 0.82 (0.03) 2.47 (0.10) 3.62 (0.14) 4.05 (0.16) 2.03 (0.08) 1.15 (0.05) 0.88 (0.03) Dimensions in millimeters (inches) Note • Linear dimensions are in black, the same information is provided in ordinate dimensions which are in blue. Revision: 08-Apr-15 1 Document Number: 67477 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000