SIJH5700E-T1-GE3

SiJH5700E www.vishay.com Vishay Siliconix N-Channel 150 V (D-S) 175 °C MOSFET FEATURES PowerPAK K® 8 x 8L • TrenchFET® Gen V power MOSFET • Fully lead (Pb)-free device • Very low RDS x Qg figure of merit (FOM) D S 8 m m S S G 1 7.9 S 4 mm Top View S 3 S 2 • Up to 174 A maximum continuous drain current • 50 % smaller footprint than D2PAK (TO-263) G 1 • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Bottom View PRODUCT SUMMARY VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 7.5 V Qg typ. (nC) ID (A) a Configuration D • Synchronous rectification 150 0.0041 0.0044 93 174 Single • OR-ing G • Motor drive control • Battery management N-Channel MOSFET S ORDERING INFORMATION Package Lead (Pb)-free and halogen-free PowerPAK 8 x 8L SIJH5700E-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-source voltage Gate-source voltage Continuous drain current (TJ = 175 °C) TC = 25 °C TC = 70 °C TA = 25 °C SYMBOL LIMIT VDS VGS 150 ±20 174 138 17 b ID TA = 70 °C Pulsed drain current (t = 100 μs) IDM Continuous source-drain diode current TC = 25 °C TA = 25 °C IS Single pulse avalanche current Single pulse avalanche energy L = 0.1 mH IAS EAS TC = 25 °C TC = 70 °C Maximum power dissipation TA = 25 °C TA =70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c PD TJ, Tstg 15 b 500 303 3b 40 80 333 233 3.3 b 2.3 b -55 to +175 260 UNIT V A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b Steady state RthJA 36 45 °C/W 0.36 0.45 Maximum junction-to-case (drain) Steady state RthJC Notes a. TC = 25 °C b. Surface mounted on 1" x 1" FR4 board c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 8 x 8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0138-Rev. A, 14-Feb-2022 Document Number: 62052 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH5700E www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT V Static Drain-source breakdown voltage VDS VGS = 0 V, ID = 1 mA 150 - - ΔVDS/TJ ID = 10 mA - 86 - VGS(th) temperature coefficient ΔVGS(th)/TJ ID = 250 μA - -9.5 - Gate-source threshold voltage VDS temperature coefficient mV/°C VGS(th) VDS = VGS, ID =250 μA 2 - 4 V Gate-source leakage IGSS VDS = 0 V, VGS = ±20 - - 100 nA Zero gate voltage drain current IDSS Drain-source on-state resistance a Forward transconductance a VDS = 120 V, VGS =0 V - - 1 VDS = 120 V, VGS = 0 V, TJ = 70 °C - - 15 VGS = 10 V, ID = 20 A - 0.0034 0.0041 VGS = 7.5 V, ID = 20 A - 0.0036 0.0044 VDS = 15 V, ID = 70 A - 175 - - 7500 - - 620 - - 12 - - 93 140 - 70 105 VDS = 75 V, VGS = 7.5 V, ID = 20 A - 36 - - 8 - f = 1 MHz 0.36 1.8 3.6 - 28 60 - 20 40 - 45 90 tf - 45 90 td(on) - 24 50 - 33 70 - 41 80 - 46 90 RDS(on) gfs μA Ω S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Gate resistance Rg Turn-on delay time Rise time Turn-off delay time Fall time Turn-on delay time Rise time Turn-off delay time Fall time VDS = 75 V, VGS = 0 V, f = 1 MHz VDS = 75 V, VGS = 10 V, ID = 20 A td(on) tr td(off) tr td(off) VDD = 75 V, RL = 7.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω VDD = 75 V, RL = 7.5 Ω, ID ≅ 10 A, VGEN = 7.5 V, Rg = 1 Ω tf pF nC Ω ns Drain-Source Body Diode Characteristics Continuous source-drain diode current IS Pulse diode forward current ISM Body diode voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb TC = 25 °C IS = 10 A, VGS = 0 V IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C - - 303 - - 500 - 0.75 1.1 V - 197 400 ns - 1480 2960 nC - 141 - - 56 - A ns Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0138-Rev. A, 14-Feb-2022 Document Number: 62052 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH5700E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 150 10000 10000 150 VGS = 10 V thru 6 V VGS = 5 V 60 100 1000 90 TC = 25 °C 60 100 30 30 1st line 2nd line 1000 90 2nd line ID - Drain Current (A) 120 1st line 2nd line 2nd line ID - Drain Current (A) 120 TC = 150 °C TC = -55 °C VGS = 4 V 0 10 0.5 1.0 1.5 2.0 2.5 0 3.0 1 2 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 100 000 0.0040 1st line 2nd line 1000 VGS = 7.5 V 0.0035 100 VGS = 10 V 2nd line C - Capacitance (pF) 10000 0.0030 6 Axis Title Axis Title 0.0045 10000 Ciss 10 000 1000 Coss 1000 100 100 Crss 0 30 60 90 120 10 10 10 0.0025 0 150 5 10 Axis Title Axis Title 10000 8 1000 1st line 2nd line 2nd line VGS - Gate-to-Source Voltage (V) ID = 20 A 6 VDS = 40 V, 75 V, 120 V 4 100 2 10 0 60 80 100 10000 2.6 2nd line RDS(on) - On-Resistance (Normalized) 10 40 ID = 20 A 2.2 VGS = 10 V 1000 1.8 VGS = 7.5 V 1.4 100 1.0 0.6 10 0.2 -50 -25 0 25 50 75 100 125 150 175 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature S22-0138-Rev. A, 14-Feb-2022 25 Capacitance On-Resistance vs. Drain Current and Gate Voltage 20 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) 0 15 1st line 2nd line RDS(on) - On-Resistance ( ) 3 1st line 0 10 0 Document Number: 62052 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH5700E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 3.5 TJ = 175 °C 10 10000 4.0 10000 1000 TJ = 25 °C 1 3.0 1st line 2nd line 2nd line VGS(th) (V) 1000 1st line 2nd line 2nd line IS - Source Current (A) 100 ID = 250 µA 2.5 100 100 0.1 2.0 0 0.2 0.4 0.6 0.8 10 1.5 10 0.01 1.0 -50 -25 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage Axis Title Axis Title 10000 0.025 10000 200 160 TJ = 125 °C 100 0.005 1000 120 1st line 2nd line 0.010 2nd line P - Power (W) 1000 0.015 1st line 2nd line 2nd line RDS(on) - On-Resistance ( ) ID = 20 A 0.020 80 100 40 TJ = 25 °C 10 0 0 2 4 6 8 0 0.01 10 0.1 1 10 100 10 1000 VGS - Gate-to-Source Voltage (V) t - Time (s) On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient Axis Title IDM limited 10000 1000 2nd line ID - Drain Current (A) 100 µs ID(ON) limited 1 ms 1000 10 10 ms 1 1st line 2nd line Limited by RDS(on) 100 a 100 ms 100 0.1 TA = 25 °C, single pulse 1s 10 s DC BVDSS limited 0.01 0.01 0.1 1 10 100 10 1000 VDS - Drain-to-Source Voltage (V) Safe Operating Area, Junction-to-Ambient Note a. VGS > minimum VGS at which RDS(on) is specified S22-0138-Rev. A, 14-Feb-2022 Document Number: 62052 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH5700E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 200 10000 10000 400 150 100 1000 250 1st line 2nd line 100 2nd line P - Power (W) 300 1000 1st line 2nd line 2nd line ID - Drain Current (A) 350 200 150 100 100 50 50 10 0 0 25 50 75 100 125 150 175 10 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating a Power, Junction-to-Case 175 Note a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S22-0138-Rev. A, 14-Feb-2022 Document Number: 62052 5 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SiJH5700E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title 1 10000 0.2 Notes 0.1 PDM 1000 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.1 t1 0.05 t2 t1 1. Duty cycle, D = t 2 2. Per unit base = RthJA = 45 °C/W 0.02 3. TJM - TA = PDMZthJA Single pulse 0.01 0.0001 0.001 0.01 100 (t) 4. Surface mounted 0.1 1 10 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 1 10000 0.2 1000 0.1 0.1 1st line 2nd line Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.05 100 0.02 Single pulse 0.01 0.0001 10 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62052. S22-0138-Rev. A, 14-Feb-2022 Document Number: 62052 6 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® 8 x 8L BWL Case Outline 2 c D2 E3 D5 E4 W4 D6 E2 D6 W1 D5 E5 b2 E1 E z1 b e b1 z2 L1 L A2 A1 0.25 gauge line D1 ȧ Bottom view (single) A Top view (single) DIM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. A 1.50 1.60 1.70 0.059 0.063 MAX. 0.067 A1 0.00 - 0.127 0.000 - 0.005 A2 0.655 0.705 0.755 0.026 0.028 0.030 b 0.92 1.00 1.08 0.036 0.039 0.043 b1 1.02 1.10 1.18 0.040 0.043 0.046 b2 6.84 6.94 7.04 0.269 0.273 0.277 c 0.20 0.25 0.30 0.008 0.010 0.012 D1 7.80 7.90 8.00 0.307 0.311 0.315 D2 6.70 6.80 6.90 0.264 0.268 0.272 D5 0.37 0.47 0.57 0.015 0.019 0.022 D6 2.49 2.59 2.69 0.098 0.102 0.106 e 1.97 2.00 2.03 0.078 0.079 0.080 E 7.90 8.00 8.10 0.311 0.315 0.319 E1 6.12 6.22 6.32 0.241 0.245 0.249 E2 4.21 4.31 4.41 0.166 0.170 0.174 E3 4.92 5.02 5.12 0.194 0.198 0.202 E4 3.80 3.90 4.00 0.150 0.154 0.157 E5 0.65 0.75 0.85 0.026 0.030 0.033 L 0.61 0.68 0.75 0.024 0.027 0.030 L1 1.00 1.07 1.15 0.039 0.042 0.045 W1 0.30 0.40 0.50 0.012 0.016 0.020 W4 0.32 0.37 0.42 0.013 0.015 0.017 z1 0.45 0.55 0.65 0.018 0.022 0.026 z2 1.81 1.91 2.01 0.071 0.075 0.079  0° - 5° 0° - 5° ECN: S19-0643-Rev. B, 05-Aug-2019 DWG: 6073 Note • Millimeter will govern Revison: 05-Aug-2019 Document Number: 79736 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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