SIS776DN-T1-GE3

SiS776DN Vishay Siliconix N-Channel 30 V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 e RDS(on) (Ω) ID (A) 0.0062 at VGS = 10 V 35 0.0087 at VGS = 4.5 V 35 Qg (Typ.) 11.6 nC PowerPAK 1212-8 S 3.30 mm 3.30 mm 1 APPLICATIONS S 2 • System Power - Low Side S 3 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Power MOSFET and Schottky Diode • Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile • 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC G 4 D D 8 D 7 D 6 Schottky Diode D 5 G Bottom View N-Channel MOSFET S Ordering Information: SiS776DN-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 TC = 70 °C TA = 25 °C ID Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy IDM TC = 25 °C TA = 25 °C L = 0.1 mH IS TC = 70 °C TA = 25 °C Soldering Recommendations (Peak Temperature)c, d 60 A 35e 5.4a, b 20 EAS 20 mJ 52 PD 33 3.8a, b W 2.4a, b TA = 70 °C Operating Junction and Storage Temperature Range 18.3a, b IAS TC = 25 °C Maximum Power Dissipation 35e 14.5a, b TA = 70 °C Pulsed Drain Current V 35e TC = 25 °C Continuous Drain Current (TJ = 150 °C) Unit TJ, Tstg - 50 to 150 260 °C Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. e. Package limited. Document Number: 67012 S10-2251-Rev. A, 04-Oct-10 www.vishay.com 1 SiS776DN Vishay Siliconix THERMAL RESISTANCE RATINGS Parameter Symbol a, b Maximum Junction-to-Ambient Maximum Junction-to-Case (Drain) Typical Maximum t ≤ 10 s RthJA 24 33 Steady State RthJC 1.9 2.4 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. b. Maximum under steady state conditions is 81 °C/W. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static VDS VGS = 0 V, ID = 1 mA 30 VGS(th) VDS = VGS, ID = 250 µA 1.0 Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistancea Forward Transconductancea RDS(on) gfs V 2.5 V ± 100 nA VDS = 30 V, VGS = 0 V 0.030 0.30 VDS = 30 V, VGS = 0 V, TJ = 100 °C 1.6 15 VGS = 10 V, ID = 10 A 0.0050 0.0062 VGS = 4.5 V, ID = 7 A 0.0072 0.0087 VDS = 10 V, ID = 10 A 40 VDS ≥ 5 V, VGS = 10 V 30 mA A Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time www.vishay.com 2 1360 VDS = 15 V, VGS = 0 V, f = 1 MHz 340 pF 117 VDS = 15 V, VGS = 10 V, ID = 10 A VDS = 15 V, VGS = 4.5 V, ID = 10 A 24 36 11.6 17.5 3.5 3.6 1.5 3.0 td(on) 18 35 tr 11 22 f = 1 MHz VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 0.4 20 40 tf 10 20 td(on) 11 22 10 20 20 40 8 16 td(off) tr td(off) tf nC VDD = 15 V, RL = 1.5 Ω ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω Ω ns Document Number: 67012 S10-2251-Rev. A, 04-Oct-10 SiS776DN Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Currenta IS TC = 25 °C 35 ISM VSD 60 IS = 3 A A 0.49 0.65 Body Diode Reverse Recovery Time trr 19 35 ns Body Diode Reverse Recovery Charge Qrr 8 15 nC Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb Body Diode Voltage IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 8 11 V ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 67012 S10-2251-Rev. A, 04-Oct-10 www.vishay.com 3 SiS776DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 10 80 V GS = 10 V thru 4 V 8 ID - Drain Current (A) I D - Drain Current (A) 64 48 32 6 4 T C = 25 °C V GS = 3 V 2 16 T C = 125 °C V GS = 2 V 0 0 0.5 1.0 1.5 2.0 T C = - 55 °C 0 0 2.5 1 3 4 5 VGS - Gate-to-Source Voltage (V) V DS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.009 1800 0.008 1440 V GS = 4.5 V C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2 0.007 0.006 Ciss 1080 720 Coss V GS = 10 V 0.005 360 0.004 0 Crss 0 12 24 36 48 60 0 5 15 20 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.8 10 ID = 10 A ID = 10 A 1.6 8 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 10 V DS = 10 V 6 V DS = 15 V 4 V DS = 20 V 2 VGS = 10 V 1.4 VGS = 4.5 V 1.2 1.0 0.8 0 0 www.vishay.com 4 5 10 15 20 25 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 150 Document Number: 67012 S10-2251-Rev. A, 04-Oct-10 SiS776DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 0.05 100 ID = 10 A TJ = 150 °C TJ = 25 °C RDS(on) - On-Resistance (Ω) I S - Source Current (A) 10 1 0.1 0.04 0.03 0.02 0.01 0.01 0.001 0 0 0.2 0.4 0.6 0.8 1.0 T J = 125 °C T J = 25 °C 0 1 2 VSD - Source-to-Drain Voltage (V) 3 4 5 6 7 8 9 10 VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 10-1 150 10-2 10-3 30 V 10 V 10-4 90 Power (W) IR - Reverse (A) 120 60 20 V 10-5 30 10-6 10-7 0 25 50 75 100 125 0 0.001 150 0.01 TJ - Temperature (°C) 0.1 1 10 Time (s) Reverse Current (Schottky) Single Pulse Power, Junction-to-Ambient 100 Limited by RDS(on) * ID - Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 10 s 0.1 DC TA = 25 °C Single Pulse 0.01 0.01 0.1 BVDSS Limited 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Document Number: 67012 S10-2251-Rev. A, 04-Oct-10 www.vishay.com 5 SiS776DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 75 ID - Drain Current (A) 60 45 Package Limited 30 15 0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 65 2.0 52 1.6 39 1.2 Power (W) Power (W) Current Derating* 26 0.8 0.4 13 0.0 0 0 25 50 75 100 125 150 0 25 50 75 100 125 TC - Case Temperature (°C) TA - Ambient Temperature (°C) Power Derating, Junction-to-Case Power, Junction-to-Ambient 150 * The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 67012 S10-2251-Rev. A, 04-Oct-10 SiS776DN Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 81 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 10 -3 10 -2 4. Surface Mounted 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67012. Document Number: 67012 S10-2251-Rev. A, 04-Oct-10 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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