SQ1470EH
www.vishay.com
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• AEC-Q101 Qualifiedd
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
30
RDS(on) () at VGS = 4.5 V
0.065
RDS(on) () at VGS = 2.5 V
0.095
ID (A)
2.8
Configuration
Single
SOT-363
SC-70 (6-LEADS)
D
D
1
6
D
D
2
5
D
Marking Code
G
3
4
XX
G
YY
9C
Lot Traceability
and Date Code
S
S
Part # Code
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
SC-70
Lead (Pb)-free and Halogen-free
SQ1470EH-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
TC = 25 °C
Continuous Drain Currenta
Continuous Source Current (Diode
ID
TC = 125 °C
Conduction)a
Pulsed Drain Currentb
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipationb
L = 0.1 mH
Operating Junction and Storage Temperature Range
2.8
IS
2.8
11
IAS
10
PD
TC = 125 °C
V
2.8
IDM
EAS
TC = 25 °C
UNIT
5
3.3
1.1
A
mJ
W
TJ, Tstg
- 55 to + 175
°C
SYMBOL
LIMIT
UNIT
RthJA
125
RthJF
45
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
PCB Mountc
Junction-to-Foot (Drain)
°C/W
Notes
a. Package limited.
b. Pulse test; pulse width 300 μs, duty cycle 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
S11-2128 Rev. C, 31-Oct-11
1
Document Number: 67059
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1470EH
www.vishay.com
Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS = 0 V, ID = 250 μA
30
-
-
VGS(th)
VDS = VGS, ID = 250 μA
0.6
1.0
1.6
VDS = 0 V, VGS = ± 12 V
IGSS
-
-
± 500
VGS = 0 V
VDS = 30 V
-
-
1
-
-
50
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V
VDS = 30 V, TJ = 125 °C
VGS = 0 V
VDS = 30 V, TJ = 175 °C
-
-
150
On-State Drain Currenta
ID(on)
VGS = 4.5 V
VDS5 V
5
-
-
Drain-Source On-State Resistancea
Forward Transconductanceb
RDS(on)
VGS = 4.5 V
ID = 3.8 A
-
0.050
0.065
VGS = 4.5 V
ID = 3.8 A, TJ = 125 °C
-
-
0.097
VGS = 4.5 V
ID = 3.8 A, TJ = 175 °C
-
-
0.115
VGS = 2.5 V
ID = 3.1 A
gfs
VDS = 15 V, ID = 2 A
-
0.070
0.095
-
8
-
-
488
610
-
60
75
V
nA
μA
A
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
36
45
Total Gate Chargec
Qg
-
4.4
6.6
-
1
-
-
1
-
f = 1 MHz
3
6.35
9.7
-
8
12
VDD = 15 V, RL = 3.9
ID 3.8 A, VGEN = 4.5 V, Rg = 1
-
13
20
-
14
21
-
8
12
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
Gate Resistance
Rg
Turn-On Delay
Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
VGS = 0 V
VGS = 4.5 V
VDS = 25 V, f = 1 MHz
VDS = 15 V, ID = 3.8 A
td(on)
tr
td(off)
tf
pF
nC
ns
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
Forward Voltage
VSD
IF = 2.5 A, VGS = 0 V
-
-
11
A
-
0.8
1.2
V
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S11-2128 Rev. C, 31-Oct-11
2
Document Number: 67059
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1470EH
www.vishay.com
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
10
10
VGS = 10 V thru 3 V
VGS = 2.5 V
8
ID - Drain Current (A)
ID - Drain Current (A)
8
6
4
2
6
4
TC = 25 °C
2
TC = 125 °C
0
0
1
2
3
4
VDS - Drain-to-Source Voltage (V)
0
1
2
3
4
VGS - Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
12
0.12
TC = - 55 °C
9
TC = 25 °C
6
TC = 125 °C
RDS(on) - On-Resistance (Ω)
gfs - Transconductance (S)
5
0.15
15
VGS = 2.5 V
0.09
0.06
VGS = 4.5 V
0.03
3
0.00
0
0.0
0.6
1.2
1.8
2.4
3.0
ID - Drain Current (A)
0
6
9
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
1000
3
12
15
VGS - Gate-to-Source Voltage (V)
5
800
C - Capacitance (pF)
TC = - 55 °C
0
5
600
Ciss
400
200
ID = 3.8 A
VDS = 15 V
4
3
2
1
Coss
Crss
0
0
0
5
10
15
20
25
30
0
VDS - Drain-to-Source Voltage (V)
4
6
8
10
Qg - Total Gate Charge (nC)
Capacitance
S11-2128 Rev. C, 31-Oct-11
2
Gate Charge
3
Document Number: 67059
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1470EH
www.vishay.com
Vishay Siliconix
0.5
100
0.2
10
- 0.1
ID = 5 mA
- 0.4
TJ = 150 °C
IS - Source Current (A)
VGS(th) Variance (V)
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
ID = 250 μA
1
0.1
- 0.7
TJ = 25 °C
0.01
- 1.0
- 50 - 25
0
25
50
75
100
125
150
0.001
0.0
175
0.2
TJ - Temperature (°C)
Threshold Voltage
0.8
1.0
1.2
2.0
ID = 3.8 A
RDS(on) - On-Resistance (Normalized)
RDS(on) - On-Resistance (Ω)
0.6
Source Drain Diode Forward Voltage
0.24
0.18
0.12
TJ = 150 °C
0.06
TJ = 25 °C
1.7
VGS = 4.5 V
1.4
VGS = 2.5 V
1.1
0.8
0.5
- 50 - 25
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
40
38
0
TJ - Junction Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
100
IDM Limited
ID = 1 mA
10
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
0.4
VSD - Source-to-Drain Voltage (V)
36
34
100 μs
Limited by RDS(on)*
ID Limited
0.1
32
30
- 50 - 25
0
25
50
75
100
125
150
0.01
0.01
175
TJ - Junction Temperature (°C)
Drain Source Breakdown vs. Junction Temperature
S11-2128 Rev. C, 31-Oct-11
1 ms
1
TC = 25 °C
Single Pulse
10 ms
100 ms
1s, 10 s, DC
BVDSS Limited
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
4
Document Number: 67059
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ1470EH
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = R thJA = 125 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
0.01
10-4
4. Surface Mounted
10-3
10-2
10-1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10-4
10-3
10-2
10-1
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67059.
S11-2128 Rev. C, 31-Oct-11
5
Document Number: 67059
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and
for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of
any of the products, services or opinions of the corporation, organization or individual associated with the third-party website.
Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website
or for that of subsequent links.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 01-Jan-2022
1
Document Number: 91000