SQ2360EES-T1-GE3

SQ2360EES www.vishay.com Vishay Siliconix Automotive N-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) (Ω) at VGS = 10 V 0.085 RDS(on) (Ω) at VGS = 4.5 V 0.130 ID (A) 4 Configuration • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 Single SOT-23 (TO-236) TrenchFET® Power MOSFET AEC-Q101 Qualifiedc 100 % Rg and UIS Tested Typical ESD Protection 800 V D D 3 G 2 S 1 G Top View S N-Channel MOSFET Marking Code: 8Mxxx ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2360EES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current a Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 4 2.3 IS 3.7 IDM 16 IAS 6 EAS 1.8 PD UNIT 3 1 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 166 RthJF 50 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount b °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. S14-1082-Rev. F, 26-May-14 Document Number: 65352 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2360EES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage VDS VGS = 0, ID = 250 μA 60 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 - 2.5 IGSS - - ± 5.5 VGS = 0 V VDS = 0 V, VGS = ± 20 V VDS = 60 V - - 1 - - 50 Zero Gate Voltage Drain Current IDSS VGS = 0 V VDS = 60 V, TJ = 125 °C VGS = 0 V VDS = 60 V, TJ = 175 °C - - 150 On-State Drain Current a ID(on) VGS = 10 V VDS ≥ 5 V 10 - - Drain-Source On-State Resistance a Forward Transconductance b RDS(on) gfs VGS = 10 V ID = 6 A, TJ = 25 °C - 0.058 0.085 VGS = 10 V ID = 6 A, TJ = 125 °C - - 0.197 VGS = 10 V ID = 6 A, TJ = 175 °C - - 0.258 VGS = 4.5 V ID = 5 A - 0.081 0.130 - 5.8 - - 295 370 - 55 70 VDS = -15 V, ID = 1.9 A V μA μA A Ω Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 35 55 Total Gate Charge c Qg - 7.40 12 Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Rg Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VDS = 25 V, f = 1 MHz VGS = 10 V VDS = 30 V, ID = 2 A - 0.95 - - 1.94 - f = 1 MHz 1.24 2.46 3.68 - 5 8 VDD = 30 V, RL = 15 Ω ID ≅ 2 A, VGEN = 10 V, Rg = 1 Ω - 11 17 - 10 15 - 8 12 td(on) tr td(off) tf pF nC Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 1.5 A, VGS = 0 - - 16 A - 0.8 1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S14-1082-Rev. F, 26-May-14 Document Number: 65352 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2360EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.005 10-2 I GSS - Gate Current (A) I GSS - Gate Current (mA) 0.004 0.003 TJ = 25 °C 0.002 0.001 0.000 10-4 TJ = 150 °C 10-6 TJ = 25 °C 10-8 10-10 0 6 12 18 24 VGS - Gate-to-Source Voltage (V) 30 0 Gate Current vs. Gate-Source Voltage 6 12 18 24 VGS - Gate-to-Source Voltage (V) 30 Gate Current vs. Gate-Source Voltage 12 12 VGS = 10 V thru 5 V 10 10 I D - Drain Current (A) I D - Drain Current (A) VGS = 4 V 8 6 4 2 8 6 4 TC = 25 °C TC = 125 °C 2 VGS = 3 V TC = - 55 °C 0 0 0 1 2 3 4 0 5 1 Output Characteristics 4 5 0.25 8 0.20 R DS(on) - On-Resistance (Ω) g fs - Transconductance (S) 3 Transfer Characteristics 10 TC = - 55 °C 6 TC = 25 °C 4 TC = 125 °C 2 0 0.0 2 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.15 0.10 VGS = 4.5 V VGS = 10 V 0.05 0.00 0.4 0.8 1.2 1.6 2.0 I D - Drain Current (A) 4 6 8 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current S14-1082-Rev. F, 26-May-14 0 2 10 12 Document Number: 65352 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2360EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 600 10 VDS = 30 V ID = 2 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 500 400 Ciss 300 200 Coss 100 8 6 4 2 Crss 0 0 0 10 20 30 40 50 60 0 6 Capacitance Gate Charge 8 10 10 ID = 1.5 A 2.1 VGS = 10 V I S - Source Current (A) RDS(on) - On-Resistance (Normalized) 4 Qg - Total Gate Charge (nC) 2.5 1.7 VGS = 4.5 V 1.3 1 TJ = 25 °C 0.1 TJ = 150 °C 0.01 0.9 0.5 - 50 - 25 0 25 50 75 100 125 150 0.001 0.0 175 TJ - Junction Temperature (°C) 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 0.5 0.5 0.4 0.2 VGS(th) Variance (V) R DS(on) - On-Resistance (Ω) 2 VDS - Drain-to-Source Voltage (V) 0.3 0.2 - 0.1 - 0.4 ID = 5 mA ID = 250 µA TJ = 125 °C 0.1 1.5 - 0.7 TJ = 25 °C 0.0 0 2 4 6 8 10 - 1.0 - 50 VGS - Gate-to-Source Voltage (V) 25 50 75 100 TJ - Temperature (°C) On-Resistance vs. Gate-Source Voltage Threshold Voltage S14-1082-Rev. F, 26-May-14 - 25 0 125 150 175 Document Number: 65352 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2360EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 IDM Limited ID = 1 mA 76 10 Limited by RDS(on)* ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 80 72 68 100 μs 1 ms 1 10 ms 100 ms 0.1 64 TC = 25 °C Single Pulse 60 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0.01 0.01 175 BVDSS Limited 1s, 10s, DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Drain-Source Breakdown vs. Junction Temperature Safe Operating Area THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 166 °C/W 0.02 3. TJM - T A = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 10-1 1 10 100 600 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient S14-1082-Rev. F, 26-May-14 Document Number: 65352 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2360EES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65352. S14-1082-Rev. F, 26-May-14 Document Number: 65352 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2360EES www.vishay.com REVISION HISTORY REVISION F Vishay Siliconix a DATE DESCRIPTION OF CHANGE 04-Apr-14 • Correction of RDS(on) value used in calculation of maximum continuous drain current and safe operating area curve. • VGS = 4.5 V curve added to on-resistance vs. junction temperature graph. Note a. As of April 2014 S14-1082-Rev. F, 26-May-14 Document Number: 65352 7 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix SOT-23 (TO-236): 3-LEAD b 3 E1 1 E 2 e S e1 D 0.10 mm C 0.004" A2 A C q Gauge Plane Seating Plane Seating Plane C A1 Dim 0.25 mm L L1 MILLIMETERS Min INCHES Max Min Max 0.044 A 0.89 1.12 0.035 A1 0.01 0.10 0.0004 0.004 A2 0.88 1.02 0.0346 0.040 b 0.35 0.50 0.014 0.020 c 0.085 0.18 0.003 0.007 D 2.80 3.04 0.110 0.120 E 2.10 2.64 0.083 0.104 E1 1.20 1.40 0.047 e 0.95 BSC e1 L 1.90 BSC 0.40 L1 q 0.0748 Ref 0.60 0.016 0.64 Ref S 0.024 0.025 Ref 0.50 Ref 3° 0.055 0.0374 Ref 0.020 Ref 8° 3° 8° ECN: S-03946-Rev. K, 09-Jul-01 DWG: 5479 Document Number: 71196 09-Jul-01 www.vishay.com 1 Application Note 826 Vishay Siliconix 0.049 (1.245) 0.029 0.022 (0.559) (0.724) 0.037 (0.950) (2.692) 0.106 RECOMMENDED MINIMUM PADS FOR SOT-23 0.053 (1.341) 0.097 (2.459) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72609 Revision: 21-Jan-08 www.vishay.com 25 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000