SQ2361EES-T1-GE3

SQ2361EES www.vishay.com Vishay Siliconix Automotive P-Channel 60 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • - 60 RDS(on) () at VGS = - 10 V 0.150 RDS(on) () at VGS = - 4.5 V 0.200 ID (A) - 2.5 G 1 S 2 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 S TO-236 (SOT-23) 3 D TrenchFET® Power MOSFET Typical ESD Protection: 800 V AEC-Q101 Qualified 100 % Rg and UIS Tested G Top View D SQ2361EES Marking Code: 8Nxxx P-Channel MOSFET ORDERING INFORMATION Package SOT-23 Lead (Pb)-free and Halogen-free SQ2361EES-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS - 60 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currenta Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationa L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V - 2.5 - 1.4 IS - 2.5 IDM - 10 IAS - 15 EAS 11 PD UNIT 2 0.67 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 175 RthJF 75 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mountb °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. When mounted on 1" square PCB (FR-4 material). S12-2198-Rev. C, 24-Sep-12 Document Number: 70953 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361EES www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage - - - - 2.5 ID(on) Drain-Source On-State Resistancea Forward - 60 - 1.5 IDSS Currenta Transconductanceb VGS = 0 V, ID = - 250 μA VDS = VGS, ID = - 250 μA IGSS Zero Gate Voltage Drain Current On-State Drain VDS VGS(th) RDS(on) gfs VDS = 0 V, VGS = ± 20 V - - ± 30 VDS = 0 V, VGS = ± 8 V - - ±2 VGS = 0 V VDS = - 60 V - - -1 VGS = 0 V VDS = - 60 V, TJ = 125 °C - - - 50 VGS = 0 V VDS = - 60 V, TJ = 175 °C - - - 150 VGS = - 10 V VDS - 5 V - 10 - - VGS = - 10 V ID = - 2.4 A - 0.115 0.150 VGS = - 10 V ID = - 2.4 A , TJ = 125 °C - - 0.260 VGS = - 10 V ID = - 2.4 A, TJ = 175 °C - - 0.310 VGS = - 4.5 V ID = - 1.8 A - 0.160 0.200 - 5 - - 435 545 VDS = - 10 V, ID = - 2 A V mA μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Source-Drain Diode Ratings and Rg VGS = 0 V VGS = - 10 V VDS = - 30 V, f = 1 MHz VDS = - 30 V, ID = - 6 A f = 1 MHz td(on) tr td(off) VDD = - 30 V, RL = 20  ID  - 1.5 A, VGEN = - 10 V, Rg = 1  tf - 55 70 - 40 50 - 11.2 17 - 1.6 - - 3.2 - 2.7 5.4 8.1 - 7 11 - 8 12 - 19 29 - 8 12 pF nC  ns Characteristicsb Pulsed Currenta ISM Forward Voltage VSD IF = - 1.5 A, VGS = 0 V - - - 10 A - - 0.8 - 1.2 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S12-2198-Rev. C, 24-Sep-12 Document Number: 70953 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10-0 0.005 10-1 10-2 I GSS - Gate Current (A) I GSS - Gate Current (A) 0.004 0.003 0.002 T J = 25 °C 10-3 10-4 10-5 TJ = 150 °C 10-6 TJ = 25 °C 10-7 10-8 0.001 10-9 0 10-10 0 5 10 15 20 VGS - Gate-to-Source Voltage (V) 0 25 7 14 21 28 35 VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage 12 10 VGS = 10 V thru 6 V 8 ID - Drain Current (A) ID - Drain Current (A) 10 8 6 VGS = 5 V 4 VGS = 3 V 6 4 2 2 T C = 25 °C T C = 125 °C VGS = 4 V 0 0 1 2 3 5 4 VDS - Drain-to-Source Voltage (V) 0 4 6 8 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 2 10 0.5 8 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) T C = - 55 °C 0 T C = - 55 °C 6 T C = 25 °C T C = 125 °C 4 2 0.4 0.3 0.2 V GS = 4.5 V V GS = 10 V 0.1 0 0.0 0 1 2 3 4 ID - Drain Current (A) Transconductance S12-2198-Rev. C, 24-Sep-12 5 6 0 2 4 6 8 10 ID - Drain Current (A) On-Resistance vs. Drain Current Document Number: 70953 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361EES www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10 800 ID = 6 A VGS - Gate-to-Source Voltage (V) C - Capacitance (pF) 700 600 500 Ciss 400 300 200 Coss 8 V DS = 30 V 6 4 2 100 Crss 0 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) 0 60 2 4 6 8 Qg - Total Gate Charge (nC) 2.5 100 ID = 1.7 A 2.1 10 V GS = 10 V IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 12 Gate Charge Capacitance 1.7 1.3 V GS = 4.5 V 0.9 T J = 150 °C 1 T J = 25 °C 0.1 0.01 0.5 - 50 0.001 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature 1.0 1.0 0.8 0.7 ID = 250 μA VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) 10 0.6 0.4 0.4 ID = 5 mA 0.1 T J = 150 °C - 0.2 0.2 T J = 25 °C 0.0 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-Source Voltage S12-2198-Rev. C, 24-Sep-12 10 - 0.5 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Temperature (°C) Threshold Voltage Document Number: 70953 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361EES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) ID = 1 mA IDM Limited - 64 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) - 60 - 68 - 72 Limited by RDS(on)* 100 μs 1 1 ms 0.1 10 ms - 76 TC = 25 °C Single Pulse - 80 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 0.01 0.01 175 BVDSS Limited 100 ms 1 s, 10 s, DC 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Drain Source Breakdown vs. Junction Temperature Safe Operating Area Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 175 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 4. Surface Mounted 10-2 10-1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S12-2198-Rev. C, 24-Sep-12 Document Number: 70953 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ2361EES www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?70953. S12-2198-Rev. C, 24-Sep-12 Document Number: 70953 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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