SQ3418AEEV-T1_GE3

Work-In-Progress SQ3418AEEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® power MOSFET VDS (V) 40 RDS(on) (Ω) at VGS = 10 V 0.032 RDS(on) (Ω) at VGS = 4.5 V 0.042 ID (A) 8 Configuration Single TSOP-6 Single D 6 • AEC-Q101 qualifiedd • 100 % Rg and UIS tested • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 (1, 2, 5, 6) D S 4 D 5 • Typical ESD protection 800 V (3) G 1 D Top View 2 D 3 G (4) S N-Channel MOSFET Marking Code: 8M ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and Halogen-free SQ3418AEEV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °C a TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID V 8 5 IS 6 IDM 32 IAS 5 EAS 1.2 PD UNIT 5 1.6 A mJ W TJ, Tstg -55 to +175 °C SYMBOL LIMIT UNIT RthJA 110 RthJF 30 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) PCB Mount c °C/W Notes a. Package limited. b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. c. When mounted on 1" square PCB (Fr-4 material). d. Parametric verification ongoing. SPending-Rev. A, 16-Sep-14 Document Number: 62975 1 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Work-In-Progress SQ3418AEEV www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 12 V - - ± 500 nA VDS = 0 V, VGS = ± 20 V - - ±1 mA Gate-Source Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b ID(on) RDS(on) VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 10 - - VGS = 10 V ID = 5 A - 0.026 0.032 VGS = 10 V ID = 5 A, TJ = 125 °C - - 0.050 VGS = 10 V ID = 5 A, TJ = 175 °C - - 0.061 VGS = 4.5 V ID = 4 A - 0.032 0.042 - 13 - gfs VDS = 15 V, ID = 4 A V μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge c Qg Gate-Source Charge c Qgs Gate-Drain Charge c Qgd Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c VGS = 0 V VGS = 4.5 V Rg VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 4 A f = 1 MHz td(on) tr td(off) VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tf - 528 - - 112 - - 76 - - 3.5 - - 1.3 - - 1.2 - - 2.3 - - 8 - - 8 - - 15 - - 7 - pF nC Ω ns Source-Drain Diode Ratings and Characteristics TC = 25 °C b Pulsed Current a ISM Forward Voltage VSD IF = 3 A, VGS = 0 - - 32 A - 0.8 1.2 V Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62975. SPending-Rev. A, 16-Sep-14 Document Number: 62975 2 For technical questions, contact: automos.techsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000