SQ3418EEV-T1-GE3

SQ3418EEV www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Typical ESD Protection 800 V • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC 40 RDS(on) () at VGS = 10 V 0.032 RDS(on) () at VGS = 4.5 V 0.048 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm 1 6 2 5 3 4 (1, 2, 5, 6) D (3) G 2.85 mm Marking Code: 8Bxxx (4) S N-Channel MOSFET ORDERING INFORMATION Package TSOP-6 Lead (Pb)-free and Halogen-free SQ3418EEV-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 40 Gate-Source Voltage VGS ± 20 Continuous Drain Current TC = 25 °Ca ID TC = 125 °C Continuous Source Current (Diode Conduction) Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb L = 0.1 mH TC = 25 °C Operating Junction and Storage Temperature Range V 8 5 IS 6 IDM 32 IAS 5 EAS 1.2 PD TC = 125 °C UNIT 5 1.6 A mJ W TJ, Tstg - 55 to + 175 °C SYMBOL LIMIT UNIT RthJA 110 RthJF 30 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient PCB Mountc Junction-to-Foot (Drain) °C/W Notes a. Package limited. b. Pulse test; pulse width  300 μs, duty cycle  2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing. S11-2124-Rev. C, 07-Nov-11 1 Document Number: 65357 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3418EEV www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductanceb VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 IGSS IDSS ID(on) RDS(on) V VDS = 0 V, VGS = ± 12 V - - ± 500 nA VDS = 0 V, VGS = ± 20 V - - ±1 mA 1 VGS = 0 V VDS = 40 V - - VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 VGS = 10 V VDS5 V 10 - - VGS = 10 V ID = 5 A - 0.026 0.032 VGS = 10 V ID = 5 A, TJ = 125 °C - - 0.050 VGS = 10 V ID = 5 A, TJ = 175 °C - - 0.061 VGS = 4.5 V ID = 4 A - 0.040 0.048 - 13 - - 528 660 - 112 140 - 76 95 gfs VDS = 15 V, ID = 4 A μA A  S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec VGS = 0 V VGS = 4.5 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 4 A f = 1 MHz Rg td(on) tr VDD = 20 V, RL = 4  ID  5 A, VGEN = 10 V, Rg = 1  td(off) tf Source-Drain Diode Ratings and Characteristics TC = 25 Pulsed Currenta ISM Forward Voltage VSD - 7.1 11 - 1.7 - - 3.7 - 1.2 2.4 3.6 - 8 12 - 8 12 - 15 23 - 7 11 pF nC  ns °Cb IF = 3 A, VGS = 0 - - 32 A - 0.8 1.2 V Notes a. Pulse test; pulse width  300 μs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S11-2124-Rev. C, 07-Nov-11 2 Document Number: 65357 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3418EEV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 10-2 0.005 T J = 25 °C 10-3 10-4 IGSS - Gate Current (A) IGSS - Gate Current (A) 0.004 0.003 0.002 10-5 T J = 150 °C 10-6 T J = 25 °C 10-7 10-8 0.001 10-9 10-10 0.000 0 6 12 18 24 0 30 6 VGS - Gate-Source Voltage (V) Gate Current vs. Gate-Source Voltage 12 18 24 VGS - Gate-Source Voltage (V) 30 Gate Current vs. Gate-Source Voltage 24 30 VGS = 10 V thru 5 V 24 ID - Drain Current (A) ID - Drain Current (A) 18 18 12 TC = 25 °C 6 VGS = 4 V 6 12 TC = 125 °C VGS = 3 V TC = - 55 °C 0 0 0 2 4 6 8 0 10 2 6 8 10 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 25 gfs - Transconductance (S) 8 ID - Drain Current (A) 4 TC = 125 °C 6 TC = 25 °C 4 TC = - 55 °C 20 TC = 25 °C 15 TC = 125 °C 10 5 2 TC = - 55 °C 0 0 0 1 2 3 4 VGS - Gate-to-Source Voltage (V) 0 5 Transfer Characteristics S11-2124-Rev. C, 07-Nov-11 2 4 6 ID - Drain Current (A) 8 10 Transconductance 3 Document Number: 65357 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3418EEV www.vishay.com Vishay Siliconix 0.15 1000 0.12 800 Ciss C - Capacitance (pF) RDS(on) - On-Resistance (Ω) TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 0.09 VGS = 4.5 V 0.06 600 400 Coss VGS = 10 V 0.03 200 0.00 0 Crss 0 6 12 18 ID - Drain Current (A) 24 30 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 150 175 2.0 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 40 Capacitance 5 ID = 4 A VDS = 20 V 4 3 2 1 0 2 4 6 8 Qg - Total Gate Charge (nC) ID = 5 A 1.7 1.4 VGS = 10 V 1.1 0.8 0.5 - 50 - 25 0 10 0 25 50 75 100 125 TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature 100 0.25 10 0.20 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 35 TJ = 150 °C 1 0.1 TJ = 25 °C 0.01 0.15 0.10 TJ = 150 °C 0.05 TJ = 25 °C 0.001 0.00 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage S11-2124-Rev. C, 07-Nov-11 0 2 4 6 8 VGS - Gate-to-Source Voltage (V) 10 On-Resistance vs. Gate-Source Voltage 4 Document Number: 65357 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3418EEV www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 60 0.6 ID = 1 mA VDS - Drain-to-Source Voltage (V) VGS(th) Variance (V) 0.3 0.0 - 0.3 ID = 5 mA - 0.6 ID = 250 μA - 0.9 - 1.2 - 50 - 25 0 25 50 75 100 TJ - Temperature (°C) 125 150 57 54 51 48 45 - 50 - 25 175 Threshold Voltage 0 25 50 75 100 125 TJ - Junction Temperature (°C) 150 175 Drain-Source Breakdown vs. Junction Temperature 100 ID - Drain Current (A) IDM Limited 100 μs 10 Limited by RDS(on)* 1 ms ID Limited 1 10 ms 100 ms 1 s, 10 s, DC 0.1 BVDSS Limited TC = 25 °C Single Pulse 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area S11-2124-Rev. C, 07-Nov-11 5 Document Number: 65357 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQ3418EEV www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.05 PDM 0.1 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 110 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. 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