SQJ431AEP
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Vishay Siliconix
Automotive P-Channel 200 V (D-S) 175 °C MOSFET
FEATURES
PowerPAK® SO-8L Single
• TrenchFET® power MOSFET
• AEC-Q101 qualified
• 100 % Rg and UIS tested
D
6.
15
m
m
m
1
13
m
4
G
5.
Top View
3
S
2
S
1
S
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
Bottom View
PRODUCT SUMMARY
G
VDS (V)
-200
RDS(on) () at VGS = -10 V
0.305
RDS(on) () at VGS = -6 V
0.315
ID (A)
-9.4
Configuration
Package
D
Single
P-Channel MOSFET
PowerPAK SO-8L
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-source voltage
VDS
-200
Gate-source voltage
VGS
± 20
TC = 25 °C
Continuous drain current
TC = 125 °C
Continuous source current (diode conduction)
Pulsed drain current a
Single pulse avalanche current
L = 0.1 mH
Single pulse avalanche energy
TC = 25 °C
Maximum power dissipation a
TC = 125 °C
Operating junction and storage temperature range
Soldering recommendations (peak
ID
-5.4
-60
IDM
-37
IAS
-30
EAS
45
TJ, Tstg
temperature) c, d
V
-9.4
IS
PD
UNIT
68
22
-55 to +175
260
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-ambient
Junction-to-case (drain)
PCB mount b
SYMBOL
LIMIT
RthJA
68
RthJC
2.2
UNIT
°C/W
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. When mounted on 1" square PCB (FR4 material)
c. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L. The end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection
d. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
S18-0008-Rev. A, 15-Jan-18
Document Number: 75999
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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SQJ431AEP
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Vishay Siliconix
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
VDS
VGS = 0, ID = -250 μA
-200
-
-
VGS(th)
VDS = VGS, ID = -250 μA
-2.5
-3.0
-3.5
VDS = 0 V, VGS = ± 20 V
UNIT
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
On-state drain current a
Drain-source on-state resistance a
Forward transconductance b
Dynamic
IGSS
IDSS
ID(on)
RDS(on)
gfs
-
-
± 100
VGS = 0 V
VDS = -200 V
-
-
-1
VGS = 0 V
VDS = -200 V, TJ = 125 °C
-
-
-50
VGS = 0 V
VDS = -200 V, TJ = 175 °C
-
-
-150
VGS = -10 V
VDS -5 V
-5
-
-
VGS = -10 V
ID = -3.8 A
-
0.254
0.305
VGS = -10 V
ID = -3.8 A, TJ = 125 °C
-
-
0.591
VGS = -10 V
ID = -3.8 A, TJ = 175 °C
-
-
0.763
VGS = -6 V
ID = -3.8 A
-
0.261
0.315
-
15
-
-
2734
3700
-
155
210
-
103
140
VDS = -15 V, ID = -3.8 A
V
nA
μA
A
S
b
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge c
Qg
Gate-source charge c
Qgs
Gate-drain charge c
Qgd
Gate resistance
Rg
Turn-on delay
time c
Rise time c
Turn-off delay time c
Fall time c
VGS = 0 V
VDS = -25 V, f = 1 MHz
-
55
85
-
11
-
-
17
-
f = 1 MHz
0.6
1.25
1.9
-
16
25
VDD = -100 V, RL = 20.8
ID -4.8 A, VGEN = -10 V, Rg = 1
-
5
10
-
35
55
-
5
10
VGS = -10 V
VDS = -100 V, ID = -5.2 A
td(on)
tr
td(off)
tf
pF
nC
ns
Source-Drain Diode Ratings and Characteristics b
Pulsed current a
ISM
Forward voltage
VSD
IF = -5 A, VGS = 0
-
-
-37
-
-0.8
-1.2
V
-
101
205
ns
-
52
105
nC
-
87
-
Body diode reverse recovery time
trr
Body diode reverse recovery charge
Qrr
Reverse recovery fall time
ta
Reverse recovery rise time
tb
-
14
-
IRM(REC)
-
-11.3
-
Body diode peak reverse recovery
current
IF = -4 A, di/dt = 100 A/μs
A
ns
A
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S18-0008-Rev. A, 15-Jan-18
Document Number: 75999
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ431AEP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
35
50
10000
10000
TC = -55 °C
VGS = 5 V
14
100
7
TC = 25 °C
40
1000
30
1st line
2nd line
1000
21
1st line
2nd line
2nd line
ID - Drain Current (A)
28
2nd line
gfs - Transconductance (S)
VGS = 10 V thru 6 V
TC = 125 °C
20
100
10
VGS = 4 V
0
0
10
0
2
4
6
8
5
10
20
ID - Drain Current (A)
2nd line
Output Characteristics
Transconductance
25
Axis Title
4000
0.8
10000
0.6
VGS = 6 V
0.4
VGS = 10 V
0.2
Ciss
1000
2400
1st line
2nd line
2nd line
C - Capacitance (pF)
3200
1600
100
Crss
800
Coss
0
0
6
12
18
24
0
30
10
0
ID - Drain Current (A)
2nd line
40
1st line
2nd line
TC = 25 °C
100
8
TC = -55 °C
0
10
4
6
8
10
10000
ID = 5.2 A
VDS = 100 V
8
1000
6
1st line
2nd line
1000
24
2nd line
VGS - Gate-to-Source Voltage (V)
32
2
4
100
2
0
10
0
20
40
60
80
VGS - Gate-to-Source Voltage (V)
2nd line
Qg - Total Gate Charge (nC)
2nd line
Transfer Characteristics
Gate Charge
S18-0008-Rev. A, 15-Jan-18
200
10
10000
0
160
Axis Title
Axis Title
TC = 125 °C
120
Capacitance
40
16
80
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current
2nd line
ID - Drain Current (A)
15
VDS - Drain-to-Source Voltage (V)
2nd line
1.0
2nd line
RDS(on) - On-Resistance (Ω)
10
0
10
100
Document Number: 75999
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ431AEP
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Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
Axis Title
Axis Title
1.0
TJ = 150 °C
1000
1
100
0.1
TJ = 25 °C
0.01
10
0
0.3
0.6
0.9
1.2
0.8
1000
0.6
TJ = 125°C
0.4
100
0.2
TJ = 25 °C
0
10
0
1.5
2
6
8
10
VGS - Gate-to-Source Voltage (V)
2nd line
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Axis Title
-0.3
ID = 5 mA
-0.7
ID = 250 μA
-1.1
-1.5
0
25
50
8002
7003
246
6004
5005
234
4006
3007
222
2008
210
75 100 125 150 175
10
-50 -25
TJ - Temperature (°C)
2nd line
0
50
75 100 125 150 175
Drain Source Breakdown vs. Junction Temperature
Axis Title
Axis Title
3.0
1000
10000
10000
VGS = 10 V
IDM limited
100
1st line
2nd line
1000
VGS = 6 V
1.2
100
2nd line
ID - Drain Current (A)
2.4
1.8
25
TJ - Junction Temperature (°C)
2nd line
Threshold Voltage
ID = 4 A
9001
ID = 1 mA
258
1000
Limited by RDS(on) (1)
10
100 μs
1 ms
1
10 ms
TC = 25 °C
Single pulse
0
10
-50 -25
0
25
50
75 100 125 150 175
TJ - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S18-0008-Rev. A, 15-Jan-18
100
100 ms, 1 s,
10 s, DC
0.1
0.6
1st line
2nd line
-50 -25
10000
1st line
2nd line
2nd line
VDS - Drain-to-Source Voltage (V)
270
0.1
2nd line
RDS(on) - On-Resistance (Normalized)
4
VSD - Source-to-Drain Voltage (V)
2nd line
0.5
2nd line
VGS(th) Variance (V)
10000
1st line
2nd line
10
2nd line
RDS(on) - On-Resistance (Ω)
10000
1st line
2nd line
2nd line
IS - Source Current (A)
100
0.01
0.01
(1)
0.1
1
BVDSS limited
10
100
10
1000
VDS - Drain-to-Source Voltage (V)
VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
Document Number: 75999
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQJ431AEP
www.vishay.com
Vishay Siliconix
THERMAL RATINGS (TC = 25 °C, unless otherwise noted)
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = R thJA = 68 °C/W
0.02
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10 -4
10 -3
10 -2
10 -1
1
Square Wave Pulse Duration (s)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
Square Wave Pulse Duration (s)
1
10
Normalized Thermal Transient Impedance, Junction-to-Case
Note
• The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Case (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75999.
S18-0008-Rev. A, 15-Jan-18
Document Number: 75999
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
www.vishay.com
Vishay Siliconix
PowerPAK® SO-8L Case Outline 2
W
E1
E
E2
W2
W3
W1
b2
D2
b
b1
L1
L
L1
A1
θ
e
D1
b3
b4
0.25 gauge line
Backside view (single)
D
Topside view (single)
b2
E1
E
E2
W2
W3
W1
F
K
D3
D3
L1
D2
b
b1
e
b3
D1
b4
Backside view (dual)
D
C
A
Topside view (dual)
Document Number: 66934
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Nov-2021
Package Information
www.vishay.com
DIM.
Vishay Siliconix
MILLIMETERS
INCHES
MIN.
NOM.
MAX.
MIN.
NOM.
MAX.
A
1.00
1.07
1.14
0.039
0.042
0.045
A1
0.00
-
0.127
0.00
-
0.005
b
0.33
0.41
0.48
0.013
0.016
0.019
b1
0.44
0.51
0.58
0.017
0.020
0.023
b2
4.80
4.90
5.00
0.189
0.193
0.197
b3
0.094
0.004
b4
0.47
0.019
c
0.20
0.25
0.30
0.008
0.010
0.012
D
5.00
5.13
5.25
0.197
0.202
0.207
D1
4.80
4.90
5.00
0.189
0.193
0.197
D2
3.86
3.96
4.06
0.152
0.156
0.160
D3
1.63
1.73
1.83
0.064
0.068
0.072
e
1.27 BSC
0.050 BSC
E
6.05
6.15
6.25
0.238
0.242
0.246
E1
4.27
4.37
4.47
0.168
0.172
0.176
E2
2.75
2.85
2.95
0.108
0.112
0.116
F
-
-
0.15
-
-
0.006
L
0.62
0.72
0.82
0.024
0.028
0.032
L1
0.92
1.07
1.22
0.036
0.042
0.048
K
0.51
0.020
W
0.23
0.009
W1
0.41
0.016
W2
2.82
0.111
W3
θ
2.96
0°
-
0.117
10°
0°
-
10°
ECN: C21-1498-Rev. C, 01-Nov-2021
DWG: 6044
Note
• Millimeters will govern
Document Number: 66934
2
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Revision: 01-Nov-2021
PAD Pattern
www.vishay.com
Vishay Siliconix
RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L SINGLE
5.000
(0.197)
0.510
(0.020)
2.310
(0.091)
4.061
(0.160)
0.595
(0.023)
6.250
(0.246)
8.250
(0.325)
3.630
(0.143)
0.610
(0.024)
0.410
(0.016)
2.715
(0.107)
0.860
(0.034)
1.291
(0.051)
0.710
(0.028)
0.820
(0.032)
1.905
(0.075)
1.270
(0.050)
7.250
(0.285)
Recommended Minimum Pads
Dimensions in mm (inches)
Revision: 07-Feb-12
1
Document Number: 63818
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
to the warranty expressed therein.
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Revision: 09-Jul-2021
1
Document Number: 91000