SQJ126EP-T1_GE3

SQJ126EP www.vishay.com Vishay Siliconix Automotive N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L • TrenchFET® Gen IV power MOSFET • AEC-Q101 qualified • 100 % Rg and UIS tested D • Qgd/Qgs ratio characteristics 6. 15 m m 1 4 G m 0m 4.9 Top View 3 S 2 S 1 S 1 optimizes switching • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Bottom View PRODUCT SUMMARY G VDS (V) 30 RDS(on) () at VGS = 10 V 0.00094 ID (A) Configuration Package < 500 S Single N-Channel MOSFET PowerPAK SO-8L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 30 Gate-source voltage VGS ± 20 Continuous drain current TC = 25 °C TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current Single pulse avalanche energy Maximum power dissipation a L = 0.1 mH TC = 25 °C TC = 125 °C Operating junction and storage temperature range ID 500 IS 454 776 IAS 53.5 EAS 143 TJ, Tstg Soldering recommendations (peak temperature) c V 288 IDM PD UNIT 500 166 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL LIMIT RthJA 42 RthJC 0.3 UNIT °C/W Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S20-0744-Rev. A, 05-Oct-2020 Document Number: 77126 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ126EP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance b VDS VGS = 0, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 2.5 3.0 3.5 VDS = 0 V, VGS = ± 20 V IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 40 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 250 VGS = 10 V VDS  5 V 30 - - VGS = 10 V ID = 15 A - VGS = 10 V ID = 15 A, TJ = 125 °C - - 0.00165 VGS = 10 V ID = 15 A, TJ = 175 °C - - 0.0020 - 100 - VDS = 15 V, ID = 10 A V nA μA A 0.0007 0.00094  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Turn-on delay time c Rise time c Turn-off delay time c Fall time c Rg VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 15 V, ID = 15 A f = 1 MHz td(on) tr td(off) VDD = 15 V, RL = 0.5  ID  15 A, VGEN = 10 V, Rg = 1  tf - 5782 8095 - 1812 2537 - 174 244 - 101 152 - 26 - - 24 - 0.8 1.6 2.4 - 17 26 - 18 27 - 39 59 - 17 26 pF nC  ns Source-Drain Diode Ratings and Characteristics b Pulsed current a ISM Forward voltage VSD Body diode reverse recovery time trr Body diode reverse recovery charge Qrr IF = 15 A, VGS = 0 V IF = 10 A, di/dt = 100 A/μs - - 1816 - - 1.1 V - 59 118 ns - 66 132 nC Reverse recovery fall time ta - - - Reverse recovery rise time tb - 33 - IRM(REC) - 2 - Body diode peak reverse recovery current A ns A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature    Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0744-Rev. A, 05-Oct-2020 Document Number: 77126 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ126EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 300 350 10000 10000 VGS = 10 V thru 6 V 240 1st line 2nd line 120 100 60 1000 210 TC = 25 °C 140 100 70 VGS = 4 V 1st line 2nd line 2nd line ID - Drain Current (A) 1000 180 2nd line ID - Drain Current (A) 280 VGS = 5 V TC = 125 °C TC = -55 °C 0 0 10 0 2 4 6 8 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 Axis Title 300 0.0025 10000 180 TC = 125 °C 120 60 0 0 15 30 45 60 0.0020 1000 0.0015 1st line 2nd line TC = 25 °C 240 2nd line RDS(on) - On-Resistance (Ω) 2nd line gfs - Transconductance (S) TC = -55 °C 0.0010 VGS = 10 V 0.0005 0 75 10 0 ID - Drain Current (A) 20 100 Crss 100 10 24 30 10000 ID = 15 A VDS = 15 V 8 1000 6 1st line 2nd line 1000 2nd line VGS - Gate-to-Source Voltage (V) 1000 Coss 1st line 2nd line 2nd line C - Capacitance (pF) Ciss 4 100 2 0 10 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S20-0744-Rev. A, 05-Oct-2020 100 10 10000 18 80 Axis Title Axis Title 12 60 On-Resistance vs. Drain Current 10 000 6 40 ID - Drain Current (A) Transconductance 0 100 150 Document Number: 77126 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ126EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 45 ID = 15 A 1000 1.5 1.1 100 0.7 0.3 0 25 50 ID = 1 mA 43 1000 41 39 100 37 35 10 -50 -25 10000 1st line 2nd line VGS = 10 V 1.9 2nd line VDS - Drain-to-Source Voltage (V) 10000 1st line 2nd line 75 100 125 150 175 10 -50 -25 0 25 75 100 125 150 175 TJ - Junction Temperature (°C) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature Drain Source Breakdown vs. Junction Temperature Axis Title Axis Title 100 0.005 TJ = 150 °C 10 1000 1 100 0.1 TJ = 25 °C 2nd line RDS(on) - On-Resistance (Ω) 10000 1st line 2nd line 2nd line IS - Source Current (A) 50 10000 0.004 1000 0.003 0.002 1st line 2nd line 2nd line RDS(on) - On-Resistance (Normalized) 2.3 TJ = 150 °C 100 0.001 TJ = 25 °C 0.01 0.000 10 0 0.2 0.4 0.6 0.8 1.0 1.2 10 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source Drain Diode Forward Voltage On-Resistance vs. Gate-to Source Voltage Axis Title 0.5 1000 10000 Axis Title IDM limited 10000 ID limited 1000 -0.7 100 ID = 250 μA -1.1 -1.5 0 25 50 75 100 125 150 175 1 ms Limited by RDS(on) a 10 ms 1 0.1 10 -50 -25 100 μs 1000 10 0.01 0.01 1st line 2nd line ID = 5 mA -0.3 2nd line ID - Drain Current (A) 100 1st line 2nd line 2nd line VGS(th) - Variance (V) 0.1 100 ms TC = 25 °C, single pulse BVDSS limited 100 1 s, 10 s, DC 10 0.1 1 10 TJ - Junction Temperature (°C) VDS - Drain-to-Source Voltage (V) Threshold Voltage Safe Operating Area 100 Note a. VGS > minimum VGS at which RDS(on) is specified S20-0744-Rev. A, 05-Oct-2020 Document Number: 77126 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ126EP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Duty cycle = 0.5 0.2 0.1 0.1 1000 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance 10000 1 0.02 0.01 100 0.001 Single pulse 0.0001 0.0001 10 0.001 0.01 0.1 1 10 100 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Ambient Axis Title 10000 Duty Cycle = 0.5 0.2 1000 0.1 0.1 0.01 0.05 1st line 2nd line Normalized Effective Transient Thermal Impedance 1 0.02 Single pulse 0.001 0.0001 100 10 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) 2nd line Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?77126. S20-0744-Rev. A, 05-Oct-2020 Document Number: 77126 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L (PPKSO8LWLA) Case Outline 3 b2 D6 D5 E3 E2 E4 E E1 E5 W4 W1 D5 z2 Pin 1 marking A1 b b1 L 0.2 Gauge line c e L1 ɵ z1 D2 D1 Backside view (single) A Topside view DIM. MIN. A 1.00 A1 0.00 b 0.33 b1 0.43 b2 4.00 c 0.15 D1 4.80 D2 3.86 D5 0.51 D6 2.64 e E 6.05 E1 4.27 E2 3.18 E3 3.48 E4 2.72 E5 0.71 L 0.62 L1 0.92 W1 0.31 W4 0.31 z1 0.37 z2 0.99 θ 0° ECN: C23-1016-Rev. D, 18-Sep-2023 DWG: 6067 Note • Millimeter will govern MILLIMETERS NOM. 1.05 --0.41 0.51 4.10 0.20 4.90 3.96 0.61 2.74 1.27 BSC 6.15 4.37 3.28 3.58 2.82 0.81 0.72 1.07 0.41 0.36 0.47 1.09 --- INCHES MAX. 1.10 0.127 0.49 0.59 4.20 0.25 5.00 4.06 0.71 2.84 MIN. 0.039 0.000 0.013 0.017 0.157 0.006 0.189 0.152 0.020 0.104 6.25 4.47 3.38 3.68 2.92 0.91 0.82 1.22 0.51 0.41 0.57 1.19 5° 0.238 0.168 0.125 0.137 0.107 0.028 0.024 0.036 0.012 0.012 0.015 0.039 0° NOM. 0.041 --0.016 0.020 0.161 0.008 0.193 0.156 0.024 0.108 0.050 BSC 0.242 0.172 0.129 0.141 0.111 0.032 0.028 0.042 0.016 0.014 0.019 0.043 --- MAX. 0.043 0.005 0.019 0.023 0.165 0.010 0.197 0.160 0.028 0.112 0.246 0.176 0.133 0.145 0.115 0.036 0.032 0.048 0.020 0.016 0.022 0.047 5° Document Number: 76666 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revison: 18-Sep-2023 PAD Pattern www.vishay.com Vishay Siliconix 0.3 (0.012) 3.48 (0.137) 6.73 (0.265) 2.82 (0.111) 0.76 (0.030) 4 (R x R 0. 0 00 .2 8) 5.3 (0.209) 2.7 (0.106) 0.71 (0.028) Recommended Land Pattern PowerPAK® SO-8L Single Short Ear 16 (R x 0. R0 00 .1 4) 1.1 (0.043) 3.96 (0.156) 1.27 (0.050) 0.68 (0.027) Dimensions in Millimeters (Inches) Revision: 24-Aug-2021 Document Number: 78020 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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