SQJ844AEP-T1_GE3

SQJ844AEP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET FEATURES PowerPAK® SO-8L Dual • TrenchFET® power MOSFET • AEC-Q101 qualified D1 • 100 % Rg and UIS tested D2 6. 15 m m 3 4 S2 G2 m 1 13 5. m Top View 1 2 S1 G1 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D1 Bottom View PRODUCT SUMMARY VDS (V) D2 RDS(on) (Ω) at VGS = 10 V 0.0166 RDS(on) (Ω) at VGS = 4.5 V 0.0276 ID (A) per leg 8 Configuration Dual G2 G1 30 S1 S2 N-Channel MOSFET N-Channel MOSFET ORDERING INFORMATION Package PowerPAK SO-8L Lead (Pb)-free and halogen-free SQJ844AEP (for detailed order number please see www.vishay.com/doc?79771) ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ± 20 Continuous Drain Current a TC = 25 °C TC = 125 °C Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation b L = 0.1 mH TC = 25 °C TC = 125 °C Operating Junction and Storage Temperature Range ID 8 IS 8 32 IAS 23 EAS 26 TJ, Tstg Soldering Recommendations (Peak Temperature) d, e V 8 IDM PD UNIT 48 16 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) PCB Mount c SYMBOL LIMIT RthJA 85 RthJC 3.1 UNIT °C/W Notes a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S22-0224-Rev. C, 07-Mar-2022 Document Number: 62832 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ844AEP www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. VDS VGS = 0, ID = 250 μA 30 - - VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 VDS = 0 V, VGS = ± 20 V UNIT Static Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance b IGSS IDSS ID(on) RDS(on) gfs - - ± 100 VGS = 0 V VDS = 30 V - - 1 VGS = 0 V VDS = 30 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 30 V, TJ = 175 °C - - 150 VGS = 10 V VDS ≥ 5 V 30 - - VGS = 10 V ID = 7.6 A - 0.0138 0.0166 VGS = 4.5 V ID = 5.9 A - 0.0230 0.0276 VGS = 10 V ID = 7.6 A, TJ = 125 °C - - 0.0252 VGS = 10 V ID = 7.6 A, TJ = 175 °C - - 0.0300 - 20 - - 929 1161 - 280 350 VDS = 15 V, ID = 7.6 A V nA μA A Ω S Dynamic b Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss - 93 116 Total Gate Charge c Qg - 17 26 - 3 - Gate-Source Charge Gate-Drain c Charge c Gate Resistance Turn-On Delay Time c Rise Time c Turn-Off Delay Time c Fall Time c Qgs VGS = 0 V VDS = 15 V, f = 1 MHz VGS = 10 V VDS = 15 V, ID = 10 A Qgd pF nC - 3 - f = 1 MHz 1.1 - 5 td(on) - 4.5 7 tr VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω - 10 15 - 20 30 - 7 10 - - 32 A - 0.8 1.2 V Rg td(off) tf Ω ns Source-Drain Diode Ratings and Characteristics b Pulsed Current a ISM Forward Voltage VSD IF = 4.3 A, VGS = 0 Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S22-0224-Rev. C, 07-Mar-2022 Document Number: 62832 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ844AEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 50 50 VGS = 10 V thru 5 V 40 30 ID - Drain Current (A) ID - Drain Current (A) 40 VGS = 4 V 20 30 TC = 25 °C 20 10 10 VGS = 3 V TC = 125 °C 0 2 4 6 8 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 10 0.10 30 TC = 25 °C TC = -55 °C RDS(on) - On-Resistance (Ω) 24 gfs - Transconductance (S) TC = -55 °C 0 0 18 TC = 125 °C 12 0.08 0.06 VGS = 4.5 V 0.04 6 0.02 0 0.00 VGS = 10 V 0 3 6 9 12 0 15 20 30 40 ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 1400 50 10 ID = 10 A VDS = 15 V VGS - Gate-to-Source Voltage (V) 1200 C - Capacitance (pF) 10 ID - Drain Current (A) Ciss 1000 800 600 Coss 400 Crss 200 0 8 6 4 2 0 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) Capacitance S22-0224-Rev. C, 07-Mar-2022 25 30 0 5 10 15 20 Qg - Total Gate Charge (nC) Gate Charge Document Number: 62832 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ844AEP www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) 100 ID = 14 A VGS = 10 V 1.7 10 TJ = 150 °C IS - Source Current (A) RDS(on) - On-Resistance (Normalized) 2.0 1.4 1.1 0.8 1 0.1 TJ = 25 °C 0.01 0.001 0.5 -50 -25 0 25 50 75 100 125 150 0.0 175 0.2 TJ - Junction Temperature (°C) 0.6 0.8 1.0 1.2 Source Drain Diode Forward Voltage 0.10 0.5 0.08 0.2 VGS(th) Variance (V) RDS(on) - On-Resistance (Ω) On-Resistance vs. Junction Temperature 0.06 0.04 0.4 VSD - Source-to-Drain Voltage (V) TJ = 150 °C -0.1 ID = 5 mA -0.4 ID = 250 μA -0.7 0.02 TJ = 25 °C -1.0 0.00 0 2 4 6 8 -50 10 -25 0 VGS - Gate-to-Source Voltage (V) 25 50 75 100 125 150 175 TJ - Temperature (°C) On-Resistance vs. Gate-to-Source Voltage Threshold Voltage VDS - Drain-to-Source Voltage (V) 40 ID = 1 mA 38 36 34 32 30 50 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S22-0224-Rev. C, 07-Mar-2022 Document Number: 62832 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ844AEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1000 IDM Limited ID - Drain Current (A) 100 10 Limited by RDS(on)* 1 ms ID Limited 1 0.1 0.01 0.01 TC = 25 °C Single Pulse 10 ms 100 ms, 1 s, 10 s, DC BVDSS Limited 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 60 °C/W 3. T JM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 - 4 10 - 3 10 - 2 10 - 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient S22-0224-Rev. C, 07-Mar-2022 Document Number: 62832 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQJ844AEP www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 - 5 10 - 4 10 - 3 10 - 2 Square Wave Pulse Duration (s) 10 - 1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?62832. S22-0224-Rev. C, 07-Mar-2022 Document Number: 62832 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix PowerPAK® SO-8L Case Outline 2 W E1 E E2 W2 W3 W1 b2 D2 b b1 L1 L L1 A1 θ e D1 b3 b4 0.25 gauge line Backside view (single) D Topside view (single) b2 E1 E E2 W2 W3 W1 F K D3 D3 L1 D2 b b1 e b3 D1 b4 Backside view (dual) D C A Topside view (dual) Document Number: 66934 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 Package Information www.vishay.com DIM. Vishay Siliconix MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 1.00 1.07 1.14 0.039 0.042 0.045 A1 0.00 - 0.127 0.00 - 0.005 b 0.33 0.41 0.48 0.013 0.016 0.019 b1 0.44 0.51 0.58 0.017 0.020 0.023 b2 4.80 4.90 5.00 0.189 0.193 0.197 b3 0.094 0.004 b4 0.47 0.019 c 0.20 0.25 0.30 0.008 0.010 0.012 D 5.00 5.13 5.25 0.197 0.202 0.207 D1 4.80 4.90 5.00 0.189 0.193 0.197 D2 3.86 3.96 4.06 0.152 0.156 0.160 D3 1.63 1.73 1.83 0.064 0.068 0.072 e 1.27 BSC 0.050 BSC E 6.05 6.15 6.25 0.238 0.242 0.246 E1 4.27 4.37 4.47 0.168 0.172 0.176 E2 2.75 2.85 2.95 0.108 0.112 0.116 F - - 0.15 - - 0.006 L 0.62 0.72 0.82 0.024 0.028 0.032 L1 0.92 1.07 1.22 0.036 0.042 0.048 K 0.51 0.020 W 0.23 0.009 W1 0.41 0.016 W2 2.82 0.111 W3 θ 2.96 0° - 0.117 10° 0° - 10° ECN: C21-1498-Rev. C, 01-Nov-2021 DWG: 6044 Note • Millimeters will govern Document Number: 66934 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 01-Nov-2021 PAD Pattern www.vishay.com Vishay Siliconix RECOMMENDED MINIMUM PAD FOR PowerPAK® SO-8L DUAL 6.7500 (0.266) 5.1300 (0.202) 0.4100 (0.016) 0, 0 1.7300 (0.068) 0.5000 (0.020) 1.9800 (0.078) 0.9150 (0.036) 0.5850 (0.023) 0.7200 (0.028) 2.1100 (0.083) 3.0750 (0.121) 7.7500 (0.305) 0.5100 (0.020) 0.2550 (0.010) 6.1500 (0.242) 3.9900 (0.157) 2.5650 (0.101) 0.4700 (0.019) 1.2700 (0.050) 0.4100 (0.016) Recommended Minimum Pads Dimensions in mm (inches) Keep-out 6.75 (0.266) x 7.75 (0.305) Revision: 07-Feb-12 1 Document Number: 63817 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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