SQS142ENW-T1_GE3

SQS142ENW www.vishay.com Vishay Siliconix Automotive N-Channel 40 V (D-S) 175 °C MOSFET FEATURES PowerPAK® • TrenchFET® Gen IV power MOSFET 1212-8SLW D D D 7 8 D 6 5 • AEC-Q101 qualified • 100 % Rg and UIS tested • Wettable flank terminals • Low thermal resistance with 0.75 mm profile 3. 3 m m 1 3.3 mm Top View 3 4 S G Bottom View 2 S 1 S • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D Marking code: Q048 PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V 0.0045 ID (A) 110 Configuration Package G 40 S Single PowerPAK 1212-8SLW N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS 40 Gate-source voltage VGS ± 20 TC = 25 °C Continuous drain current TC = 125 °C Continuous source current (diode conduction) Pulsed drain current a Single pulse avalanche current L = 0.1 mH Single pulse avalanche energy TC = 25 °C Maximum power dissipation a TC = 125 °C Operating junction and storage temperature range Soldering recommendations (peak ID 63 103 IDM 271 IAS 23 PD TJ, Tstg temperature) c V 110 IS EAS UNIT 26 113 37 -55 to +175 260 A mJ W °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient Junction-to-case (drain) PCB mount b SYMBOL LIMIT RthJA 81 RthJC 1.32 UNIT °C/W Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. When mounted on 1" square PCB (FR4 material) c. See solder profile (www.vishay.com/doc?73257). A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S23-1097-Rev. B, 11-Dec-2023 Document Number: 63180 1 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS142ENW www.vishay.com Vishay Siliconix SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage VDS VGS = 0, ID = 250 μA 40 - - VGS(th) VDS = VGS, ID = 250 μA 2.3 2.8 3.3 Gate-source leakage IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VGS = 0 V VDS = 40 V - - 1 Zero gate voltage drain current IDSS VGS = 0 V VDS = 40 V, TJ = 125 °C - - 50 VGS = 0 V VDS = 40 V, TJ = 175 °C - - 150 On-state drain current a ID(on) VGS = 10 V VDS ≥ 5 V 20 - - VGS = 10 V ID = 10 A - 0.0034 0.0045 VGS = 10 V ID = 10 A, TJ = 125 °C - - 0.0076 VGS = 10 V ID = 10 A, TJ = 175 °C - - 0.0095 - 60 - - 1394 1952 Gate-source threshold voltage Drain-source on-state resistance a Forward transconductance b Dynamic RDS(on) gfs VDS = 15 V, ID = 10 A V nA μA A Ω S b Input capacitance Ciss Output capacitance Coss - 474 664 Reverse transfer capacitance Crss - 32 45 Total gate charge c Qg - 23 35 - 7 - - 5 - f = 1 MHz 1.1 2.2 3.3 td(on) - 15 23 tr VDD = 20 V, RL = 6.67 Ω ID ≅ 3 A, VGEN = 10 V, Rg = 1 Ω - 6 9 - 23 35 - 7 11 Gate-source charge c Qgs Gate-drain charge c Qgd Gate resistance Rg Turn-on delay time c Rise time c Turn-off delay time c Fall time c td(off) VGS = 0 V VGS = 10 V VDS = 25 V, f = 1 MHz VDS = 20 V, ID = 3 A tf Source-Drain Diode Ratings and Characteristic nC Ω ns b Pulsed current a ISM Forward voltage VSD IF = 10 A, VGS = 0 V - - 271 A - 0.82 1.1 V - 29 58 ns - 21 42 nC - 14 - Body diode reverse recovery time trr Body diode reverse recovery charge Qrr Reverse recovery fall time ta Reverse recovery rise time tb - 15 - IRM(REC) - -1.3 - Body diode peak reverse recovery current pF VDD = 32 V, IFM = 3 A, di/dt = 100 A/μs, R = 10 Ω, L = 0.3 mH, pulse width = 2 μs ns A Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S23-1097-Rev. B, 11-Dec-2023 Document Number: 63180 2 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS142ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 400 VGS = 10 V thru 7 V 10000 200 1st line 2nd line VGS = 6 V 160 100 VGS = 5 V 80 1000 150 1st line 2nd line 1000 240 2nd line ID - Drain Current (A) 320 2nd line ID - Drain Current (A) 250 10000 100 100 TC = 25 °C 50 TC = 125 °C VGS = 4 V 0 0 2 4 6 8 TC = -55 °C 0 10 10 10 0 2 4 6 8 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Axis Title 10 Axis Title 120 10 000 10000 10000 1000 TC = 125 °C 60 100 30 0 12 24 36 48 100 10 8 24 32 VDS - Drain-to-Source Voltage (V) Transconductance Capacitance Axis Title VGS = 7.5 V 0.004 100 VGS = 10 V 0 10 40 60 80 100 10000 ID = 3 A VDS = 20 V 8 1000 6 1st line 2nd line 1000 0.006 2nd line VGS - Gate-to-Source Voltage (V) 0.008 0.002 4 100 2 0 10 0 5 10 15 20 ID - Drain Current (A) Qg - Total Gate Charge (nC) On-Resistance vs. Drain Current Gate Charge S23-1097-Rev. B, 11-Dec-2023 40 10 10000 1st line 2nd line 2nd line RDS(on) - On-Resistance (Ω) 16 ID - Drain Current (A) Axis Title 20 100 Crss 0 60 0.010 0 1000 Coss 10 10 0 1000 1st line 2nd line TC = 25 °C 2nd line C - Capacitance (pF) Ciss 90 1st line 2nd line 2nd line gfs - Transconductance (S) TC = -55 °C 25 Document Number: 63180 3 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS142ENW www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.2 TJ = 150 °C 1000 1 100 0.1 TJ = 25 °C 0.01 0.4 0.8 ID = 4 A 1.9 VGS = 10 V 1.6 1.3 VGS = 4.5 V 1.0 100 0.7 10 -50 -25 1.2 0 25 50 75 100 125 150 175 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) Source Drain Diode Forward Voltage On-Resistance vs. Junction Temperature Axis Title Axis Title 0.6 10000 0.018 0.3 10000 1000 ID = 5 mA -0.3 -0.6 100 -0.9 ID = 250 μA -1.2 -1.5 10 -50 -25 0 25 50 75 0.012 1000 1st line 2nd line 0 2nd line RDS(on) - On-Resistance (Ω) 0.015 1st line 2nd line 2nd line VGS(th) - Variance (V) 1000 0.4 10 0 10000 1st line 2nd line 10 2nd line RDS(on) - On-Resistance (Normalized) 10000 1st line 2nd line 2nd line IS - Source Current (A) 100 0.009 TJ = 150 °C 0.006 100 0.003 TJ = 125 °C TJ = 25 °C 0.000 100 125 150 175 10 0 2 4 6 8 10 TJ - Junction Temperature (°C) VGS - Gate-to-Source Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage Axis Title 10000 54 ID = 1 mA 53 1000 52 1st line 2nd line 2nd line VDS - Drain-to-Source Voltage (V) 55 51 50 100 49 48 47 10 -50 -25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (°C) Drain Source Breakdown vs. Junction Temperature S23-1097-Rev. B, 11-Dec-2023 Document Number: 63180 4 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS142ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) Axis Title 10000 IDM limited ID limited 100 μs 1000 10 Limited by RDS(on) a 1 ms 10 ms 100 ms, 1001 s, 10 s, DC 1 1st line 2nd line 2nd line ID - Drain Current (A) 100 BVDSS limited TC = 25 °C, single pulse 0.1 0.01 10 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Safe Operating Area Note a. VGS > minimum VGS at which RDS(on) is specified S23-1097-Rev. B, 11-Dec-2023 Document Number: 63180 5 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SQS142ENW www.vishay.com Vishay Siliconix THERMAL RATINGS (TA = 25 °C, unless otherwise noted) 1 Normalized Effective Transient Thermal Impedance Duty cycle = 0.5 0.2 0.1 Notes: 0.1 PDM 0.05 t1 t2 1. Duty cycle, D = t1 t2 2. Per unit base = R thJA = 81 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single pulse 4. Surface mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 100 10 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty cycle = 0.5 0.2 0.1 0.1 Single pulse 0.05 0.02 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Note • The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C) - Normalized Transient Thermal Impedance Junction-to-Case (25 °C) are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?63180. S23-1097-Rev. B, 11-Dec-2023 Document Number: 63180 6 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR PowerPAK® 1212-8 Single 0.152 (3.860) 0.039 0.068 (0.990) (1.725) 0.010 (0.255) (2.390) 0.094 0.088 (2.235) 0.016 (0.405) 0.026 (0.660) 0.025 0.030 (0.635) (0.760) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72597 Revision: 21-Jan-08 www.vishay.com 7 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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