SUD50N04-37P-T4-E3

New Product SUD50N04-37P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.037 at VGS = 10 V 8 0.046 at VGS = 4.5 V 8 VDS (V) 40 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % UIS Tested RoHS 5.3 nC COMPLIANT APPLICATIONS • Backlight Inverter for LCD Display • Full Bridge DC/DC Converter TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information: SUD50N04-37P-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Limit 40 ± 20 ID Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C PD A 8a 1.6b 7 mJ 2.45 10.8 6.9 W 2.0b 1.3b - 55 to 150 TJ, Tstg Operating Junction and Storage Temperature Range V 8a 8a 5.4b 4.4b 30 IDM Pulsed Drain Current Unit °C THERMAL RESISTANCE RATINGS Parameter Maximum Steady State Symbol RthJA Typical Maximum Junction-to-Ambientb 49 60 Maximum Junction-to-Case Steady State RthJC 9.4 11.5 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 69732 S-80109-Rev. B, 21-Jan-08 www.vishay.com 1 New Product SUD50N04-37P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = 1 mA 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea Forward Transconductancea gfs mV/°C - 5.5 1.4 2.5 V ± 100 nA VDS = 40 V, VGS = 0 V 1 VDS = 40 V, VGS = 0 V, TJ = 70 °C 20 VDS ≥ 5 V, VGS = 10 V rDS(on) V 44 10 µA A VGS = 10 V, ID = 5 A 0.0305 0.037 VGS = 4.5 V, ID = 4 A 0.037 0.046 VDS = 15 V, ID = 5 A 22 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 640 VDS = 20 V, VGS = 0 V, f = 1 MHz 73 pF 41 VDS = 20 V, VGS = 10 V, ID = 5 A 11.7 20 5.3 9 VDS = 20 V, VGS = 4.5 V, ID = 5 A 1.9 f = 1 MHz 2.2 nC 1.7 18 td(on) VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω tr td(off) Ω 30 14 25 14 25 tf 10 20 td(on) 9 18 VDD = 20 V, RL = 4 Ω ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω tr td(off) tf 11 20 14 25 8 18 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb 8 30 IS = 2 A IF = 2 A, di/dt = 100 A/µs, TJ = 25 °C A 0.805 1.2 V 19 30 ns 14 25 nC 13 6 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 69732 S-80109-Rev. B, 21-Jan-08 New Product SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 30 5 VGS = 10 thru 5 V 4V 4 I D - Drain Current (A) I D - Drain Current (A) 24 18 12 6 3 TC = 25 °C 2 1 TC = 125 °C 3V 0 0.0 TC = - 55 °C 0 0.5 1.0 1.5 2.0 2.5 0 1 VDS - Drain-to-Source Voltage (V) 2 3 4 5 VGS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 0.060 800 0.052 640 C - Capacitance (pF) r DS(on) - On-Resistance (Ω) Ciss 0.044 VGS = 4.5 V 0.036 VGS = 10 V 480 320 Coss 0.028 160 0.020 0 0 6 12 18 24 Crss 0 30 6 12 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) Capacitance On-Resistance vs. Drain Current 10 1.8 ID = 5 A ID = 5 A VDS = 10 V 8 VDS = 30 V 4 2 1.4 (Normalized) VDS = 20 V 6 0 0.0 VGS = 10 V 1.6 r DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) 18 VGS = 4.5 V 1.2 1.0 0.8 2.5 5.0 7.5 10.0 12.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 69732 S-80109-Rev. B, 21-Jan-08 150 www.vishay.com 3 New Product SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.20 100 ID = 5 A TJ = 150 °C 0.16 r DS(on) - On-Resistance (Ω) I S - Source Current (A) 10 TJ = 25 °C 1 0.1 0.01 0.12 0.08 TA = 125 °C 0.04 TA = 25 °C 0 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage 100 0.2 ID = 250 µA 80 ID = 5 mA Power (W) V GS(th) Variance (V) 4 Source-Drain Diode Forward Voltage 0.4 0.0 2 - 0.2 60 40 - 0.4 20 - 0.6 - 0.8 - 50 - 25 0 25 50 75 100 125 0 0.0001 150 0.001 0.01 0.1 1 10 TJ - Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 100 Limited by rDS(on)* 80 I D - Drain Current (A) Power (W) 10 60 40 100 µs 1 ms 1 10 ms 100 ms 10 s 0.1 20 DC TA = 25 °C Single Pulse 0 0.0001 0.001 0.01 0.1 Time (s) Single Pulse Power, Junction-to-Case 1 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 69732 S-80109-Rev. B, 21-Jan-08 New Product SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 7 Limited by rDS(on)* 5 I D - Drain Current (A) 1 1 ms 10 ms 100 ms, DC I D - Drain Current (A) 100 µs 10 0.1 4 3 1 TC = 25 °C Single Pulse 0 0.01 0.01 0.1 1 10 0 100 25 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified 100 125 150 Current Derating*, Junction-to-Ambient 15 2.5 12 2.0 Package Limited Power (W) I D - Drain Current (A) 75 TA - Ambient Temperature (°C) Safe Operating Area, Junction-to-Case 9 50 6 3 1.5 1.0 0.5 0 0.0 0 25 50 75 100 125 150 TC - Case Temperature (°C) 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating*, Junction-to-Ambient Current Derating*, Junction-to-Case 15 Power (W) 12 9 6 3 * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the 0 0 25 50 75 100 125 TC - Case Temperature (°C) Power Derating*, Junction-to-Case Document Number: 69732 S-80109-Rev. B, 21-Jan-08 150 upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 5 New Product SUD50N04-37P Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 Notes: 0.1 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 60 °C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10 -4 4. Surface Mounted 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (s) 100 10 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69732. www.vishay.com 6 Document Number: 69732 S-80109-Rev. B, 21-Jan-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000