SUD50P04-23-E3

SUD50P04-23 Vishay Siliconix P-Channel 40-V (D-S), 175 °C MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.023 at VGS = 10 V - 20 0.030 at VGS = 4.5 V - 20 VDS (V) - 40 Qg (Typ.) • TrenchFET® Power MOSFET • 100 % Rg Tested RoHS 20.6 nC COMPLIANT APPLICATIONS • LCD TV Inverter TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD50P04-23-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Symbol VDS VGS TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C Limit - 40 ± 16 - 20a - 20a - 8.2b - 5.7b - 50 - 20a - 2.5b - 20 20 45.4 22.7 3.1b 1.5b - 55 to 175 ID IDM Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS Single Pulse Avalanche Current Avalanche Energy L = 0.1 mH IAS EAS Maximum Power Dissipation TC = 25 °C TC = 100 °C TA = 25 °C TA = 100 °C PD TJ, Tstg Operating Junction and Storage Temperature Range Unit V A mJ W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Steady State Symbol RthJA Typical 40 Maximum 48 Maximum Junction-to-Case Steady State RthJC 2.75 3.3 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. Document Number: 74423 S-81956-Rev. B, 25-Aug-08 www.vishay.com 1 SUD50P04-23 Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 40 Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ ID = - 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 16 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea mV/°C 3.7 -0.8 -2 V ± 100 nA VDS = - 40 V, VGS = 0 V -1 VDS = - 40 V, VGS = 0 V, TJ = 100 °C - 20 VDS ≥ - 5 V, VGS = - 10 V RDS(on) Forward Transconductancea V - 40 gfs - 30 µA A VGS = - 10 V, ID = - 15 A 0.019 0.023 VGS = - 4.5 V, ID = - 10 A 0.024 0.030 VDS = 15 V, ID = - 15 A 30 Ω S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time 1880 VDS = - 20 V, VGS = 0 V, f = 1 MHz VDS = - 20 V, VGS = - 10 V, ID = - 30 A VDS = - 20 V, VGS = - 4.5 V, ID = - 30 A pF 43.5 65 20.6 31 4.6 VDD = - 20 V, RL = 0.66 Ω ID ≅ - 30 A, VGEN = - 4.5 V, Rg = 1 Ω 3 5 22 35 217 325 42 65 tf 21 32 td(on) 8 15 12 20 td(off) tr td(off) nC 7.6 f = 1 MHz td(on) tr 286 192 VDD = - 20 V, RL = 0.66 Ω ID ≅ - 30 A, VGEN = - 10 V, Rg = 1 Ω tf 36 55 9 15 Ω ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current TC = 25 °C IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb - 20 - 50 IS = - 10 A IF = - 20 A, dI/dt = 100 A/µs, TJ = 25 °C A - 0.85 - 1.2 V 44 66 ns 53 80 nC 18 26 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 74423 S-81956-Rev. B, 25-Aug-08 SUD50P04-23 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2.0 80 VGS = 10 thru 4 V 1.6 I D - Drain Current (A) I D - Drain Current (A) 64 48 32 3V 1.2 0.8 TC = 125 °C 0.4 16 25 °C 0 1 2 3 4 - 55 °C 0.0 0.0 0 5 0.6 1.2 1.8 2.4 3.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics 50 0.05 30 RDS(on) - On-Resistance (Ω) g fs - Transconductance (S) TC = - 55 °C 25 °C 40 125 °C 20 10 0 VGS = 4.5 V 0.03 VGS = 10 V 0.02 0.01 0.00 0 7 14 21 28 0 16 32 48 64 ID - Drain Current (A) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 0.20 3000 0.16 2400 C - Capacitance (pF) R DS(on) - On-Resistance (Ω) 0.04 0.12 0.08 80 Ciss 1800 1200 125 °C 0.04 600 Coss 25 °C Crss 0.00 0 0 1 2 3 4 5 6 7 8 9 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 74423 S-81956-Rev. B, 25-Aug-08 10 0 8 16 24 32 40 VDS - Drain-to-Source Voltage (V) Capacitance www.vishay.com 3 SUD50P04-23 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 2.1 ID = 15 A 8 VGS = 4.5 V 6 VDS = 10 V 4 VDS = 30 V (Normalized) 1.8 VDS = 20 V R DS(on) - On-Resistance VGS - Gate-to-Source Voltage (V) ID = 30 A 2 1.5 VGS = 10 V 1.2 0.9 0 0 10 20 30 40 0.6 - 50 50 - 25 0 Qg - Total Gate Charge (nC) Gate Charge 75 100 125 150 175 0.7 TJ = 150 °C 10 0.5 ID = 250 µA 1 0.1 VGS(th) (V) I S - Source Current (A) 50 On-Resistance vs. Junction Temperature 100 TJ = 25 °C 0.01 0.3 ID = 5 mA 0.1 - 0.1 0.001 0.00 0.2 0.4 0.6 0.8 1.0 - 0.3 - 50 1.2 - 25 0 VSD - Source-to-Drain Voltage (V) 25 50 75 100 125 150 175 TJ - Temperature (°C) Source-Drain Diode Forward Voltage Threshold Voltage 200 200 160 160 120 Power (W) Power (W) 25 TJ - Junction Temperature (°C) 80 40 120 80 40 0 0.001 0.01 0.1 1 10 100 0 0.001 0.01 0.1 1 Time (s) Time (s) Single Pulse Power, Junction-to-Ambient Single Pulse Power, Junction-to-Case www.vishay.com 4 10 Document Number: 74423 S-81956-Rev. B, 25-Aug-08 SUD50P04-23 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 100 Limited by RDS(on)* 10 1 ms 10 ms 100 ms 1 1s 10 s TA = 25 °C Single Pulse 0.1 I D - Drain Current (A) I D - Drain Current (A) Limited by RDS(on)* 100 µs 10 1 ms 10 ms 100 ms DC 1 TC = 25 °C Single Pulse 0.1 DC BVDSS Limited BVDSS Limited 0.01 0.01 0.01 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient Safe Operating Area, Junction-to-Case 9 35 28 I D - Drain Current (A) I D - Drain Current (A) 7 5 4 2 21 14 Package Limited 7 0 0 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Current Derating**, Junction-to-Ambient 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature (°C) Current Derating**, Junction-to-Case ** The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 74423 S-81956-Rev. B, 25-Aug-08 www.vishay.com 5 SUD50P04-23 Vishay Siliconix 3.70 55 2.96 44 2.22 33 Power (W) Power (W) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.48 22 11 0.74 0 0.00 0 25 50 75 100 125 150 TA - Ambient Temperature (°C) Power Derating*, Junction-to-Ambient 175 0 25 50 75 100 125 150 175 TC - Case Temperature (°C) Power Derating*, Junction-to-Case * The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. www.vishay.com 6 Document Number: 74423 S-81956-Rev. B, 25-Aug-08 SUD50P04-23 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM t1 t2 1. Duty Cycle, D = 0.05 2. Per Unit Base = RthJA = 48 C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 0.01 10-4 t1 t2 10-3 4. Surface Mounted 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 Single Pulse 0.02 0.01 10 -4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74423. Document Number: 74423 S-81956-Rev. B, 25-Aug-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1