SUD50P06-15L-T4-E3

SUD50P06-15L www.vishay.com Vishay Siliconix P-Channel 60 V (D-S), 175 °C MOSFET FEATURES DPAK (TO-252) ( • TrenchFET® power MOSFET Drain connected to tab • 175 °C junction temperature • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S S D G G Top View PRODUCT SUMMARY VDS (V) -60 RDS(on) max. () at VGS = -10 V 0.015 RDS(on) max. () at VGS = -4.5 V 0.020 ID (A) d D -50 Configuration P-Channel MOSFET Single ORDERING INFORMATION Package DPAK (TO-252) Lead (Pb)-free SUD50P06-15L-E3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-source voltage VDS -60 Gate-source voltage VGS ± 20 Continuous drain current (TJ = 175 °C) TC = 25 °C TC = 125 °C Pulsed drain current Avalanche current Repetitive avalanche energy a Power dissipation L = 0.1 mH TC = 25 °C TA = 25 °C Operating junction and storage temperature range V -50 d ID -39 IDM -80 IAR -50 EAR A 125 mJ 136 c PD TJ, Tstg UNIT W 3 b, c -55 to +175 °C THERMAL RESISTANCE RATINGS PARAMETER Junction-to-ambient b Junction-to-case SYMBOL t  10 s Steady state RthJA RthJC TYPICAL MAXIMUM 15 18 40 50 0.82 1.1 UNIT °C/W Notes a. Duty cycle  1% b. When mounted on 1" square PCB (FR4 material) c. See SOA curve for voltage derating d. Package limited S19-0388-Rev. D, 29-Apr-2019 Document Number: 72250 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P06-15L www.vishay.com Vishay Siliconix SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-source breakdown voltage Gate threshold voltage Gate-body leakage Zero gate voltage drain current On-state drain current a Drain-source on-state resistance a Forward transconductance a VDS VGS = 0 V, ID = -250 μA -60 - - VGS(th) VDS = VGS, ID = -250 μA -1 - -3 IGSS VDS = 0 V, VGS = ± 20 V - - ± 100 VDS = -48 V, VGS = 0 V - - -1 VDS = -48 V, VGS = 0 V, TJ = 125 °C - - -50 VDS = -48 V, VGS = 0 V, TJ = 175 °C - - -150 VDS = -5 V, VGS = -10 V -50 - - VGS = -10 V, ID = -17 A - 0.012 0.015 VGS = -10 V, ID = -50 A, TJ = 125 °C - - 0.025 VGS = -10 V, ID = -50 A, TJ = 175 °C - - 0.030 IDSS ID(on) RDS(on) gfs VGS = -4.5 V, ID = -14 A - - 0.020 VDS = -15 V, ID = -17 A - 61 - - 4950 - - 480 - - 405 165 V nA μA A  S Dynamic b Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Total gate charge c Qg Gate-source charge c Qgs Gate-drain charge c Turn-on delay time c - 110 - 19 - Qgd - 28 - td(on) - 15 23 c tr Turn-off delay time c td(off) Rise time Fall time c VGS = 0 V, VDS = -25 V, f = 1 MHz VDS = -30 V, VGS = -10 V, ID = -50 A VDD = -30 V, RL = 0.6  ID  -50 A, VGEN = -10 V, RG = 6  tf - 70 105 - 175 260 - 175 260 pF nC ns Source-Drain Diode Ratings and Characteristics (TC = 25 °C) b IS - - -50 Pulsed current Continuous current ISM - - -80 Forward voltage a VSD IF = -50 A, VGS = 0 V - 1 1.6 V trr IF = -50 A, di/dt = 100 A/μs - 45 70 ns Reverse recovery time A Notes a. Pulse test; pulse width  300 μs, duty cycle  2 % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature   Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S19-0388-Rev. D, 29-Apr-2019 Document Number: 72250 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P06-15L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 VGS = 10 V thru 4 V 70 70 60 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 3V 20 50 40 30 TC = 125 ° C 20 10 25 ° C 10 - 55 °C 0 0 1 2 3 4 0 0.0 5 1.5 2.0 2.5 3.0 Output Characteristics Transfer Characteristics 3.5 4.0 70 80 0.025 R DS(on) - On-Resistance () 25 °C TC = - 55 °C 80 g fs - Transconductance (S) 1.0 VGS - Gate-to-Source Voltage (V) 100 125 °C 60 40 20 0.020 VGS = 4.5 V 0.015 VGS = 10 V 0.010 0.005 0.000 0 0 10 20 30 40 50 0 60 10 20 30 40 50 60 VGS - Gate-to-Source Voltage (V) ID - Drain Current (A) Transconductance On-Resistance vs. Drain Current 10 8000 VGS - Gate-to-Source Voltage (V) 7000 6000 C - Capacitance (pF) 0.5 VDS - Drain-to-Source Voltage (V) Ciss 5000 4000 3000 2000 VDS = 30 V ID = 50 A 8 6 4 2 Coss 1000 Crss 0 0 0 10 20 30 40 50 60 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Gate Charge S19-0388-Rev. D, 29-Apr-2019 100 120 Document Number: 72250 3 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 SUD50P06-15L www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 2.0 100 VGS = 10 V ID = 17 A I S - Source Current (A) 1.6 (Normalized) R DS(on) - On-Resistance 1.8 1.4 1.2 1.0 TJ = 150 °C TJ = 25 °C 10 0.8 1 0.6 - 50 - 25 0 25 50 75 100 125 150 175 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 1.5 Source-Drain Diode Forward Voltage THERMAL RATINGS Axis Title Axis Title 100 10000 60 10000 Package limited 100 μs 20 100 10 1000 1 ms Limited by RDS(on) 1001s 100 ms, TC = 25 °C Single pulse 25 50 75 100 125 150 BVdss Limited 0.1 10 0 10 ms 1 10 0 (1) 10 0.1 175 TC - Case Temperature (°C) 2nd line (1) Max. Avalanche and Drain Current vs. Case Temperature 1st line 2nd line 30 2nd line ID - Drain Current (A) 1000 40 1st line 2nd line 2nd line ID - Drain Current (A) 50 1 10 100 VDS - Drain-to-Source Voltage (V) VGS > minimum VGS at which RDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for silicon technology and package reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72250. S19-0388-Rev. D, 29-Apr-2019 Document Number: 72250 4 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-252AA Case Outline VERSION 1: FACILITY CODE = Y E A C2 H D D1 L3 b3 e b2 e1 L gage plane height (0.5 mm) L4 b L5 E1 C A1 MILLIMETERS DIM. MIN. A 2.18 MAX. 2.38 A1 - 0.127 b 0.64 0.88 b2 0.76 1.14 b3 4.95 5.46 C 0.46 0.61 C2 0.46 0.89 D 5.97 6.22 D1 4.10 - E 6.35 6.73 E1 4.32 - H 9.40 10.41 e 2.28 BSC e1 4.56 BSC L 1.40 1.78 L3 0.89 1.27 L4 - 1.02 L5 1.01 1.52 Note • Dimension L3 is for reference only Revision: 03-Oct-2022 Document Number: 71197 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix VERSION 2: FACILITY CODE = N E e A b3 E1 E1/2 c2 θ e L4 L5 L6 H D L3 D1 θ 0.25 (3°) DETAIL "B" C A B (3°) DETAIL "B" A1 C L (L1) b1 SEATING C PLANE θ L2 GAUGE PLANE H C (b) c1 3x b 2x e c 2x b2 MILLIMETERS MILLIMETERS DIM. A MIN. 2.18 MAX. DIM. MIN. 2.39 L 1.50 A1 - 0.13 L1 b 0.65 0.89 L2 MAX. 1.78 2.74 ref. 0.51 BSC b1 0.64 0.79 L3 b2 0.76 1.13 L4 - 1.02 b3 4.95 5.46 L5 1.14 1.49 c 0.46 0.61 L6 0.65 0.85 c1 0.41 0.56  0° 10° 1 0° 15° 2 25° 35° c2 0.46 0.60 D 5.97 6.22 D1 5.21 - E 6.35 6.73 E1 4.32 e H 2.29 BSC 9.94 0.89 1.27 Notes • Dimensioning and tolerance confirm to ASME Y14.5M-1994 • All dimensions are in millimeters. Angles are in degrees • Heat sink side flash is max. 0.8 mm • Radius on terminal is optional 10.34      ECN: E22-0399-Rev. R, 03-Oct-2022 DWG: 5347 Revision: 03-Oct-2022 Document Number: 71197 2 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Application Note 826 Vishay Siliconix RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 0.087 (2.202) 0.090 (2.286) (10.668) 0.420 (6.180) (5.690) 0.180 0.055 (4.572) (1.397) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index APPLICATION NOTE Document Number: 72594 Revision: 21-Jan-08 www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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