SUD50P10-43-E3

SUD50P10-43 New Product Vishay Siliconix P-Channel 100-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID –100 0.043 at VGS = –10 V (A)a –38 Qg (Typ) RoHS 105 nC COMPLIANT TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information: SUD50P10-43–E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 _C UNLESS OTHERWISE NOTED) Symbol Limit Drain-Source Voltage Parameter VDS –100 Gate-Source Voltage VGS "20 TC = 25 _C Continuous Drain Current (TJ = 175 _C) TC = 70 _C TA = 25 _C –31.8a ID –9.4b, c –7.8b, c IDM Source Drain Diode Current Continuous Source-Drain TC = 25 _C TA = 25 _C Avalanche Current L=0 0.1 1 mH Single-Pulse Avalanche Energy TC = 70 _C TA = 25 _C –50a IS –6.9b, c IAS –40 EAS 80 mJ 136 95 PD W 8.3b, c TA = 70 _C Operating Junction and Storage Temperature Range A –50 TC = 25 _C Maximum Power Dissipation V –38a TA = 70 _C Pulsed Drain Current Unit 5.8b, c TJ, Tstg _C –50 to 175 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Symbol Typical Maximum t p 10 sec RthJA 15 18 Steady State RthJC 0.85 1.1 Unit _C/W Notes: a. Package limited. b. Surface mounted on 1” x 1” FR4 Board. c. t = 10 sec. d. Maximum under steady state conditions is 40 _C/W. Document Number: 73445 S–60311—Rev. B, 27-Feb-06 www.vishay.com 1 SUD50P10-43 New Product Vishay Siliconix SPECIFICATIONS (TJ = 25 _C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VDS VGS = 0 V, ID = –250 mA –100 Typ Max Unit Static Drain-Source Breakdown Voltage DVDS/TJ VDS Temperature Coefficient V –105 ID = –250 250 mA mV/_C VGS(th) Temperature Coefficient DVGS(th)/TJ Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = –250 mA –4 V Gate-Source Leakage IGSS VDS = 0 V, VGS = "20 V "100 nA VDS = –100 V, VGS = 0 V –1 Zero Gate Voltage Drain Current IDSS VDS = –100 V, VGS = 0 V, TJ = 55 _C –10 On-State Drain Currenta ID(on) VDS w 5 V, VGS = –10 V Drain-Source On-State Resistancea rDS(on) VGS = –10 V, ID = –9.4 A 0.036 gfs VDS = –15 V, ID = –9.4 A 30 Forward Transconductancea 7 –2 –3 –35 mA A 0.043 W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 165 Total Gate Charge Qg 105 Gate-Source Charge Qgs 21 Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 5230 VDS = –50 V, VGS = 0 V, f = 1 MHz VDS = –50 V, VGS = –10 V, ID = –9.4 A tr pF 160 nC 29 f = 1 MHz td(on) td(off) 230 VDD = –50 50 V, RL = 6.4 W ID ^ –7.8 A, VGEN = –10 V, Rg = 1 W tf W 4.1 30 50 115 175 80 120 60 90 ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD TC = 25 _C –50 –50 IS = –7.8 A –0.8 –1.2 V 60 90 ns 180 270 nC Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta 48 Reverse Recovery Rise Time tb 12 IF = –7.8 7.8 A, di/dt = 100 A/ms, TJ = 25 _C C A ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73445 S–60311—Rev. B, 27-Feb-06 SUD50P10-43 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 35 VGS = 10 thru 6 V 5V I D – Drain Current (A) I D – Drain Current (A) 30 25 20 15 16 12 8 TA = 125 _C 10 4V 4 25 _C 5 –55 _C 0 0.0 0 0.4 0.8 1.2 1.6 0 2.0 1 VDS – Drain-to-Source Voltage (V) 4 5 Capacitance 7000 VGS = 10 V 6000 C – Capacitance (pF) Ciss 0.037 0.036 5000 4000 3000 2000 Coss Crss 1000 0.035 0 0 5 10 15 20 25 30 35 0 20 40 60 80 100 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) On-Resistance vs. Junction Temperature Gate Charge 10 2.3 ID = 9.4 A 2.0 8 rDS(on) – On-Resistance (Normalized) V GS – Gate-to-Source Voltage (V) 3 VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.038 rDS(on) – On-Resistance (W) 2 VDS = 50 V 6 VDS = 80 V 4 2 ID = 9.4 A 1.7 VGS = 10 V, 6 V 1.4 1.1 0.8 0 0 20 40 60 80 Qg – Total Gate Charge (nC) Document Number: 73445 S–60311—Rev. B, 27-Feb-06 100 120 0.5 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (_C) www.vishay.com 3 SUD50P10-43 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.08 rDS(on) – Drain-to-Source On-Resistance (W) I S – Source Current (A) 40 TJ = 150 _C 10 TJ = 25 _C 0.07 TA = 125 _C 0.06 0.05 TA = 25 _C 0.04 0.03 0.02 1 0.00 0.2 0.4 0.6 0.8 1.0 4 1.2 5 6 VSD – Source-to-Drain Voltage (V) 7 8 9 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power, Junction-to-Ambient 3.4 35 3.1 30 ID = 250 mA 25 Power (W) VGS(th) (V) 2.8 2.5 20 15 2.2 10 1.9 1.6 –50 5 –25 0 25 50 75 100 125 150 0 0.01 175 0.1 TJ – Temperature (_C) 1 10 100 1000 Time (sec) Safe Operating Area, Junction-to-Ambient 100 100 ms *Limited by rDS(on) I D – Drain Current (A) 10 1 ms 10 ms 1 100 ms 1s 0.1 10 s dc TA = 25 _C Single Pulse 0.01 0.001 0.1 1 10 100 1000 VDS – Drain-to-Source Voltage (V) *VGS u minimum VGS at which rDS(on) is specified www.vishay.com 4 Document Number: 73445 S–60311—Rev. B, 27-Feb-06 SUD50P10-43 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Current De-Rating* Power De-Rating 50 140 120 40 30 Power ID – Drain Current (A) 100 20 80 60 40 10 20 0 0 0 25 50 75 100 125 150 175 TC – Case Temperature (_C) 25 50 75 100 125 150 175 TC – Case Temperature (_C) Single Pulse Avalanche Capability IC – Peak Avalanche Current (A) 100 10 TA + L @ IA BV * V DD 1 0.000001 0.00001 0.0001 0.001 0.01 TA – Time In Avalanche (sec) *The power dissipation PD is based on TJ(max) = 175 _C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73445 S–60311—Rev. B, 27-Feb-06 www.vishay.com 5 SUD50P10-43 New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25 _C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 65 _C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–2 10–1 100 1000 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 10 Square Wave Pulse Duration (sec) 1 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 Single Pulse 0.01 10–4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73445. www.vishay.com 6 Document Number: 73445 S–60311—Rev. B, 27-Feb-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1