VEMD2023X01

VEMD2003X01, VEMD2023X01 www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES VEMD2003X01 • Package type: surface mount VEMD2023X01 • Package form: GW, RGW • Dimensions (L x W x H in mm): 2.3 x 2.3 x 2.55 • AEC-Q101 qualified • High radiant sensitivity • Daylight blocking filter matched with 830 nm to 950 nm IR emitters • Fast response times • Angle of half sensitivity:  = ± 35° • Package matched with IR emitter series VSMB2943X01 DESCRIPTION VEMD2003X01 and VEMD2023X01 are high speed and high sensitive PIN photodiodes in a miniature surface mount package (SMD) with dome lens and daylight blocking filter. Filter is matched with IR emitters operating at wavelength of 830 nm to 950 nm. The photo sensitive area of the chip is 0.23 mm2. • Floor life: 4 weeks, MSL 2a, acc. J-STD-020 • Lead (Pb)-free reflow soldering • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • High speed photo detector • Infrared remote control • Infrared data transmission • Photo interrupters • IR touch panels PRODUCT SUMMARY COMPONENT Ira (μA)  (deg) 0.5 (nm) VEMD2003X01 10 ± 35 750 to 1050 VEMD2023X01 10 ± 35 750 to 1050 Note • Test conditions see table “Basic Characteristics” ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM VEMD2003X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Reverse gullwing VEMD2023X01 Tape and reel MOQ: 6000 pcs, 6000 pcs/reel Gullwing Note • MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 °C Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Rev. 1.0, 04-Apr-13 SYMBOL VALUE UNIT VR 60 V PV 215 mW Tj 100 °C Tamb - 40 to + 100 °C °C Tstg - 40 to + 100 Acc. reflow solder profile fig. 7 Tsd 260 °C Acc. J-STD-051 RthJA 250 K/W Document Number: 84147 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2003X01, VEMD2023X01 www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL IF = 50 mA VF IR = 100 μA, E = 0 V(BR) VR = 10 V, E = 0 Iro Forward voltage Breakdown voltage Reverse dark current Diode capacitance Open circuit voltage MIN. TYP. MAX. UNIT 1 V 32 V 1 10 nA VR = 0 V, f = 1 MHz, E = 0 CD 4 VR = 5 V, f = 1 MHz, E = 0 CD 1.3 pF Ee = 1 mW/cm2,  = 950 nm Vo 350 mV mV/K pF Temperature coefficient of Vo Ee = 1 mW/cm2,  = 950 nm TKVo - 2.6 Short circuit current Ee = 1 mW/cm2,  = 950 nm Ik 10 μA Temperature coefficient of Ik Ee = 1 mW/cm2,  = 950 nm TKIk 0.1 %/K Ee = 1 mW/cm2,  = 950 nm, VR = 5 V Ira Reverse light current 7  Angle of half sensitivity 10 14 μA ± 35 deg Wavelength of peak sensitivity p 940 nm Range of spectral bandwidth 0.5 750 to 1050 nm Rise time VR = 10 V, RL = 1 k,  = 820 nm tr 100 ns Fall time VR = 10 V, RL = 1 k,  = 820 nm tf 100 ns BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 100 Ira - Reverse Light Current (µA) Iro - Reverse Dark Current (nA) 1000 100 10 VR = 10 V 1 20 94 8427 40 60 1 0.1 1 10 Ee - Irradiance (mW/cm2) Tamb - Ambient Temperature (°C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 3 - Reverse Light Current vs. Irradiance 8 1.4 CD - Diode Capacitance (pF) Ira, rel - Relative Reverse Light Current 10 0.1 0.01 100 80 VR = 5 V VR = 5 V λ = 950 nm 1.2 1.0 0.8 6 E=0 f = 1 MHz 4 2 0 0.6 0 94 8416 20 40 60 80 100 Tamb - Ambient Temperature (°C) Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature Rev. 1.0, 04-Apr-13 0.1 94 8430 1 10 100 VR- Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Document Number: 84147 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2003X01, VEMD2023X01 www.vishay.com Vishay Semiconductors 0° 10° 20° 30° 1.0 0.8 0.6 0.4 0.2 0 600 700 800 900 1000 1.0 0.9 50° 0.8 60° 1100 70° 80° 0.7 0.6 0.4 0.2 0 λ - Wavelength (nm) 21554 Fig. 5 - Relative Spectral Sensitivity vs. Wavelength REFLOW SOLDER PROFILE max. 260 °C 245 °C 255 °C 240 °C 217 °C 250 max. 30 s 150 max. 100 s 100 max. ramp up 3 °C/s max. ramp down 6 °C/s 50 0 0 19841 50 100 150 200 250 Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. FLOOR LIFE Floor life (time between soldering and removing from MBB) must not exceed the time indicated on MBB label:  Floor life: 4 weeks  Conditions: Tamb < 30 °C, RH < 60 % Moisture sensitivity level 2a, acc. to J-STD-020. 200 max. 120 s Fig. 6 - Relative Radiant Intensity vs. Angular Displacement DRYPACK 300 Temperature (°C) 40° ϕ - Angular Displacement Srel - Relative Radiant Sensitivity S (λ)rel - Relative Spectral Sensitivity 1.2 300 Time (s) DRYING In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (+ 5 °C), RH < 5 %. Fig. 7 - Lead (Pb)-free Reflow Solder Profile acc. J-STD-020D Rev. 1.0, 04-Apr-13 Document Number: 84147 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2003X01, VEMD2023X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VEMD2003 Rev. 1.0, 04-Apr-13 Document Number: 84147 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2003X01, VEMD2023X01 www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters: VEMD2023 Rev. 1.0, 04-Apr-13 Document Number: 84147 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2003X01, VEMD2023X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VEMD2003 Rev. 1.0, 04-Apr-13 Document Number: 84147 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD2003X01, VEMD2023X01 www.vishay.com Vishay Semiconductors TAPING AND REEL DIMENSIONS in millimeters: VEMD2023 Rev. 1.0, 04-Apr-13 Document Number: 84147 7 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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