VS-10BQ060HM3
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Vishay Semiconductors
High Performance Schottky Rectifier, 1.0 A
FEATURES
• Low forward voltage drop
Cathode
Anode
• Guard ring for enhanced ruggedness and long
term reliability
• Small foot print, surface mountable
• High frequency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMB (DO-214AA)
• Meets JESD 201 class 2 whisker test
• AEC-Q101 qualified
PRIMARY CHARACTERISTICS
IF(AV)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
1.0 A
VR
60 V
VF at IF
0.42 V
IRM
8 mA at 125 °C
TJ max.
150 °C
DESCRIPTION / APPLICATIONS
EAS
2.0 mJ
Package
SMB (DO-214AA)
Circuit configuration
Single
The VS-10BQ060HM3 surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical
applications are in disk drives, switching power supplies,
converters, freewheeling diodes, battery charging, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Rectangular waveform
VRRM
IFSM
tp = 5 μs sine
VF
1.0 Apk, TJ = 125 °C
TJ
Range
VALUES
UNITS
1.0
A
60
V
700
A
0.42
V
-55 to +150
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
VR
VRWM
VS-10BQ060HM3
UNITS
60
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VALUES
UNITS
50 % duty cycle at TL = 116 °C, rectangular waveform
TEST CONDITIONS
1.0
A
5 μs sine or 3 μs rect. pulse
700
Maximum average forward current
IF(AV)
Maximum peak one cycle
non-repetitive surge current
IFSM
Non-repetitive avalanche energy
EAS
TJ = 25 °C, IAS = 1 A, L = 4 mH
2.0
mJ
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
1.0
A
Repetitive avalanche current
10 ms sine or 6 ms rect. pulse
Following any rated
load condition and with
rated VRRM applied
42
A
Revision: 29-Jul-2021
Document Number: 95724
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ060HM3
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Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
1A
Maximum forward voltage drop
See fig. 1
VFM (1)
TJ = 25 °C
2A
1A
TJ = 125 °C
2A
TJ = 25 °C
VALUES
UNITS
0.49
0.60
V
0.42
0.56
0.1
Maximum reverse leakage current
See fig. 2
IRM
Typical junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C
80
pF
Typical series inductance
LS
Measured lead to lead 5 mm from package body
2.0
nH
10 000
V/μs
VALUES
UNITS
-55 to +150
°C
Maximum voltage rate of charge
dV/dt
VR = Rated VR
TJ = 125 °C
Rated VR
mA
8.0
Note
(1) Pulse width = 300 μs, duty cycle = 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ (1), TStg
Maximum thermal resistance,
junction to lead
RthJL (2)
Maximum thermal resistance,
junction to ambient
RthJA
TEST CONDITIONS
DC operation
°C/W
80
Approximate weight
Marking device
36
Case style SMB (DO-214AA)
0.10
g
0.003
oz.
1H
Notes
(1)
(2)
dP tot
1
------------- < -------------- thermal runaway condition for a diode on its own heatsink
dT J R thJA
Mounted 1" square PCB
Revision: 29-Jul-2021
Document Number: 95724
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ060HM3
Vishay Semiconductors
10
100
IR - Reverse Current (mA)
IF - Instantaneous Forward Current (A)
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TJ = 150 °C
1
TJ = 125 °C
TJ = 25 °C
0.1
0.1
150 °C
125 °C
10
1.0
100 °C
75 °C
0.10
50 °C
0.010
25 °C
0.0010
0.00010
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
10
VFM - Forward Voltage Drop (V)
20
30
40
50
60
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage
CT - Junction Capacitance (pF)
100
10
0
10
20
30
40
50
60
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1 00
10
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
PDM
t1
t2
1
Notes:
1. Duty factor D = t1/ t2
Single pulse
(thermal resistance)
0.1
0.00001
0.0001
0.001
.
2. Peak TJ = Pdm x ZthJC + Tc
0.01
0.1
1
10
.
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 29-Jul-2021
Document Number: 95724
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ060HM3
Vishay Semiconductors
0.8
160
150
140
DC
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
130
120
110
Average Power Loss (W)
Allowable Case Temperature (°C)
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100
90
80
70
Square wave (D = 0.50)
80 % rated VR applied
60
see note (1)
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.6
Limit RMS
0.4
0.2
DC
0
50
0.0
0.3
0.6
0.9
1.2
0
1.5
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Average Forward Current vs.
Allowable Lead Temperature
Fig. 6 - Maximum Average Forward Dissipation vs.
Average Forward Current
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
100
At any rated load condition and
with rated VRRM applied
following surge
10
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR
Revision: 29-Jul-2021
Document Number: 95724
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10BQ060HM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
B
Q
060
H
M3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Current rating
3
-
B = SMB
4
-
Q = Schottky “Q” series
5
-
Voltage rating (060 = 60 V)
6
-
H = AEC-Q101 qualified
7
-
Environmental digit:
M3 = halogen-free, RoHS compliant and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-10BQ060HM3/5BT
PREFERRED PACKAGE CODE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
5BT
3200
13" diameter plastic tape and reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95401
Part marking information
www.vishay.com/doc?95536
Packaging information
www.vishay.com/doc?95404
SPICE model
www.vishay.com/doc?95638
Revision: 29-Jul-2021
Document Number: 95724
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For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
SMB
DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number: 95401
Revision: 09-Jul-10
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www.vishay.com
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Revision: 01-Jan-2022
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Document Number: 91000