VS-30BQ060HM3/9AT

VS-30BQ060HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 3.0 A FEATURES Cathode Anode SMC (DO-214AB) LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models DESCRIPTION PRIMARY CHARACTERISTICS IF(AV) • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Small foot print, surface mountable • High frequency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Meets JESD 201 class 2 whisker test • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 The VS-30BQ060HM3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. 3.0 A VR 60 V VF at IF 0.52 V IRM 20 mA at 125 °C TJ max. 150 °C EAS 5.0 mJ Package SMC (DO-214AB) Circuit configuration Single MECHANICAL DATA Case: SMC (DO-214AB) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 3.0 A Rectangular waveform VRRM IFSM tp = 5 μs sine VF 3.0 Apk, TJ = 125 °C TJ Range 60 V 1200 A 0.52 V -55 to +150 °C VS-30BQ060HM3 UNITS 60 V VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL IF(AV) TEST CONDITIONS 50 % duty cycle at TL = 123 °C, rectangular waveform 50 % duty cycle at TL = 113 °C, rectangular waveform VALUES UNITS 3.0 4.0 A Maximum peak one cycle non-repetitive surge current at TC = 25 °C IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1.0 A, L = 10 mH 5.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 1200 130 Revision: 07-Mar-2022 Document Number: 94844 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ060HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop VFM (1) TJ = 25 °C 6A 3A TJ = 125 °C 6A TJ = 25 °C VALUES UNITS 0.58 0.76 V 0.52 0.66 0.5 Maximum reverse leakage current IRM Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to1 MHz), 25 °C 180 pF Typical series inductance LS Measured lead to lead 5 mm from package body 3.0 nH 10 000 V/μs VALUES UNITS -55 to +150 °C Maximum voltage rate of change dV/dt VR = Rated VR TJ = 125 °C Rated VR mA 20 Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction temperature range TJ (1) Maximum storage temperature range TStg Maximum thermal resistance, junction to lead RthJL (2) Maximum thermal resistance, junction to ambient RthJA TEST CONDITIONS 12 DC operation 0.24 Approximate weight Marking device °C/W 46 g 0.008 Case style SMC (DO-214AB) oz. 3H Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 07-Mar-2022 Document Number: 94844 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ060HM3 Vishay Semiconductors 100 10 1 0.1 0.1 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C TJ = 150 °C 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C 0.1 TJ = 50 °C TJ = 25 °C 0.01 0.001 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.9 10 20 30 50 40 60 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs.Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 10 20 30 50 40 60 70 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 100 10 PDM 1 t1 0.1 0.01 0.00001 Single pulse thermal resistance) 0.0001 0.001 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 07-Mar-2022 Document Number: 94844 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ060HM3 Vishay Semiconductors 2.5 160 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 150 140 Average Power Loss (W) Allowable Lead Temperature (°C) www.vishay.com DC 130 120 80 % Square wave (D = 0.50) 110 100 90 80 2.0 1.5 RMS limit 1.0 DC 0.5 See note (1) 0 70 0 1 2 3 0 5 4 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IF(AV) - Average Power Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 1000 10 000 Tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 07-Mar-2022 Document Number: 94844 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-30BQ060HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 B Q 060 H M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product suffix 2 - Current rating 3 - B = SMC 4 - Q = Schottky “Q” series 5 - Voltage rating (060 = 60 V) 6 - H = AEC-Q101 qualified 7 - Environmental digit: M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 9AT 3500 13" diameter plastic tape and reel VS-30BQ060HM3/9AT LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95402 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?96996 Revision: 07-Mar-2022 Document Number: 94844 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMC DIMENSIONS in inches (millimeters) DO-214AB (SMC) Cathode band Mounting Pad Layout 0.185 (4.69) MAX. 0.246 (6.22) 0.220 (5.59) 0.126 (3.20) 0.114 (2.90) 0.126 (3.20) MIN. 0.280 (7.11) 0.260 (6.60) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.320 (8.13) REF. 0.103 (2.62) 0.079 (2.06) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.320 (8.13) 0.305 (7.75) Document Number: 95402 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000