VS-10BQ015HM3/5BT

VS-10BQ015HM3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 1.0 A FEATURES • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability • 125 °C TJ operation (VR < 5 V) • Optimized for OR-ing applications • High frequency operation SMB (DO-214AA) • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRIMARY CHARACTERISTICS IF(AV) 1.0 A VR 15 V VF at IF 0.21 V IRM 35 mA at 100 °C TJ max. 125 °C • Meets JESD 201 class 2 whisker test • AEC-Q101 qualified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION / APPLICATIONS EAS 1.0 mJ Package SMB (DO-214AA) Circuit configuration Single The VS-10BQ015HM3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Rectangular waveform VRRM IFSM tp = 5 μs sine VF 1.0 Apk, TJ = 125 °C TJ Range VALUES UNITS 1.0 A 15 V 140 A 0.21 V -55 to +125 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VS-10BQ015HM3 VR 15 VRWM 25 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS 50 % duty cycle at TL = 134 °C, rectangular waveform 1.0 A 5 μs sine or 3 μs rect. pulse 140 Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 2 mH 1.0 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Repetitive avalanche current 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied 40 A Revision: 29-Jul-2021 Document Number: 95722 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ015HM3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 1A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 2A 1A TJ = 125 °C 2A Maximum reverse leakage current See fig. 2 IRM Threshold voltage VF(TO) TJ = 25 °C VR = Rated VR TJ = 100 °C TJ = TJ maximum VALUES UNITS 0.33 0.39 V 0.21 0.29 0.5 mA 35 - V - mΩ Forward slope resistance rt Typical junction capacitance CT VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C 390 pF Typical series inductance LS Measured lead to lead 5 mm from package body 2.0 nH 10 000 V/μs VALUES UNITS Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ (1) -55 to +125 Maximum storage temperature range TStg -55 to +150 Maximum thermal resistance, junction to lead RthJL (2) DC operation See fig. 4 36 Maximum thermal resistance, junction to ambient RthJA DC operation 80 Approximate weight Marking device Case style SMB (DO-214AA) °C °C/W 0.10 g 0.003 oz. 1C Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB Revision: 29-Jul-2021 Document Number: 95722 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ015HM3 Vishay Semiconductors 100 10 TJ = 125 °C 1 TJ = 100 °C TJ = 75 °C Tj = 25°C 0.1 0.0 100 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) www.vishay.com 10 75 °C 50 °C 1 25 °C 0.1 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.8 3 6 9 12 15 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 100 10 0 3 6 12 9 15 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 100 10 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 PDM t1 t2 1 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 29-Jul-2021 Document Number: 95722 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ015HM3 Vishay Semiconductors 0.4 110 Average Power Loss (W) Allowable Case Temperature (°C) www.vishay.com 100 90 80 DC D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 70 60 Square wave (D = 0.50) 80 % rated VR applied D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.3 RMS limit 0.2 DC 0.1 see note (1) 50 0.0 0 0.3 0.6 0.9 1.2 0 1.5 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 29-Jul-2021 Document Number: 95722 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10BQ015HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 10 B Q 015 H M3 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating 3 - B = SMB 4 - Q = Schottky “Q” series 5 - Voltage rating (015 = 15 V) 6 - H = AEC-Q101 qualified 7 - Environmental digit: M3 = halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5BT 3200 13" diameter plastic tape and reel VS-10BQ015HM3/5BT LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95401 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 SPICE model www.vishay.com/doc?95666 Revision: 29-Jul-2021 Document Number: 95722 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SMB DIMENSIONS in inches (millimeters) DO-214AA (SMB) Cathode band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.060 (1.52) MIN. 0.012 (0.305) 0.006 (0.152) 0.220 (5.59) REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) Document Number: 95401 Revision: 09-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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