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VS-10ETS12S-M3

VS-10ETS12S-M3

  • 厂商:

    TFUNK(威世)

  • 封装:

    TO263

  • 描述:

    DIODERECT1200V10AD2PAK

  • 数据手册
  • 价格&库存
VS-10ETS12S-M3 数据手册
VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series www.vishay.com Vishay Semiconductors High Voltage Surface Mount Input Rectifier Diode, 10 A FEATURES • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C Base cathode 2 • Glass passivated pellet chip junction • Designed and qualified according to JEDEC®-JESD 47 2 1 1 Anode 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Anode D2PAK (TO-263AB) APPLICATIONS • Input rectification PRIMARY CHARACTERISTICS • Vishay switches and output rectifiers which are available in identical package outlines IF(AV) 10 A VR 800 V, 1000 V, 1200 V VF at IF 1.1 V IFSM 160 A TJ max. 150 °C Package D2PAK (TO-263AB) Circuit configuration Single DESCRIPTION The VS-10ETS..S-M3 rectifier series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150 °C junction temperature. OUTPUT CURRENT IN TYPICAL APPLICATIONS APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS 12.0 16.0 A Capacitive input filter TA = 55 °C, TJ = 125 °C common heatsink of 1 °C/W MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS Sinusoidal waveform VALUES UNITS 10 A VRRM 800 to 1200 V IFSM 160 A 1.1 V -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VF 10 A, TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-10ETS08S-M3 800 900 VS-10ETS10S-M3 1000 1100 VS-10ETS12S-M3 1200 1300 0.5 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum average forward current IF(AV) TC = 105 °C, 180° conduction half sine wave 10 Maximum peak one cycle non-repetitive surge current IFSM 10 ms sine pulse, rated VRRM applied 135 10 ms sine pulse, no voltage reapplied 160 Maximum I2t for fusing I2t Maximum I2√t for fusing I2√t 10 ms sine pulse, rated VRRM applied 91 10 ms sine pulse, no voltage reapplied 130 t = 0.1 ms to 10 ms, no voltage reapplied 1290 UNITS A A2s A2√s Revision: 16-Dec-2021 Document Number: 94888 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 10 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C V 20 mΩ 0.82 V 0.05 VR = rated VRRM TJ = 150 °C UNITS 1.1 mA 0.50 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Maximum thermal resistance, junction to case TEST CONDITIONS TJ, TStg RthJC VALUES UNITS -40 to +150 °C DC operation 2.5 °C/W Maximum thermal resistance, junction to ambient (PCB mount) RthJA (1) 62 Approximate weight 2 g 0.07 oz. 10ETS08S Case style D2PAK (TO-263AB) Marking device 10ETS10S 10ETS12S Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994 150 Maximum Allowable Case Temperature (°C) 140 Maximum Allowable Case Temperature (°C) 150 10ETS.. Series RthJC (DC) = 2.5 °C/W 130 Ø Conduction angle 120 110 100 30° 60° 90 90° 120° 10ETS.. Series RthJC (DC) = 2.5 °C/W 140 130 Ø Conduction period 120 110 30° 60° 100 90° 120° 180° 80 180° DC 90 0 2 4 6 8 10 12 0 2 4 6 8 10 12 14 16 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 18 Revision: 16-Dec-2021 Document Number: 94888 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series www.vishay.com 150 16 180° 120° 90° 60° 30° 14 12 130 10 RMS limit 8 6 Ø 4 Conduction angle 2 10ETS.. Series TJ = 150 °C 120 110 100 90 80 70 60 50 VS-10ETS..S Series 40 30 0 0 2 4 6 8 1 10 10 100 Average Forward Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - Forward Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 170 20 DC 180° 120° 90° 60° 30° 16 14 12 RMS limit 10 8 6 Ø Conduction period 10ETS.. Series TJ = 150 °C 4 2 2 4 6 8 10 12 14 130 110 90 70 50 30 VS-10ETS..S Series 10 0.01 0 0 Maximum non-repetitive surge current versus pulse train duration. Initial Tj = Tj max. No voltage reapplied Rated Vrrm reapplied 150 Peak Half Sine Wave Forward Current (A) 18 Maximum Average Forward Power Loss (W) At any rated load condition and with rated Vrrm applied following surge. Initial Tj = 150°C at 60 Hz 0.0083s at 50 Hz 0.0100s 140 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) Vishay Semiconductors 16 0.1 1 10 Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) 100 TJ = 25 °C TJ = 150 °C 10 10ETS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 16-Dec-2021 Document Number: 94888 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series www.vishay.com Vishay Semiconductors ZthJC - Transient Thermal Impedance (°C/W) 10 Steady state value (DC operation) 1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 10ETS.. Series 0.1 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 10 E T S 12 S 1 2 3 4 5 6 7 1 - Vishay Semicondutors product 2 - Current rating (10 = 10 A) 3 - Circuit configuration: 4 - Package: TRL -M3 8 9 E = single T = D2PAK (TO-263AB) 5 - Type of silicon: S = standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - S = surface mountable 8 - 08 = 800 V 10 = 1000 V 12 = 1200 V None = tube TRL = tape and reel (left oriented) TRR = tape and reel (right oriented) 9 - -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free Revision: 16-Dec-2021 Document Number: 94888 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-10ETS08S-M3, VS-10ETS10S-M3, VS-10ETS12S-M3 Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION (Example) PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION VS-10ETS08S-M3 50 Antistatic plastic tube VS-10ETS08STRR-M3 800 13" diameter reel VS-10ETS08STRL-M3 800 13" diameter reel VS-10ETS10S-M3 50 Antistatic plastic tube VS-10ETS10STRR-M3 800 13" diameter reel VS-10ETS10STRL-M3 800 13" diameter reel VS-10ETS12S-M3 50 Antistatic plastic tube VS-10ETS12STRR-M3 800 13" diameter reel VS-10ETS12STRL-M3 800 13" diameter reel VS-10ETS08S-M3 50 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96164 Part marking information www.vishay.com/doc?95444 Packaging information www.vishay.com/doc?96424 Revision: 16-Dec-2021 Document Number: 94888 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC® outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 C 2xb 2.64 (0.103) 2.41 (0.096) (3) E1 c View A - A ± 0.004 M B 0.010 M A M B 2x e Plating Base Metal (4) b1, b3 H Gauge plane L Seating plane L3 A1 Lead tip (b, b2) L4 Section B - B and C - C Scale: None Detail “A” Rotated 90 °CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. c1 (4) (c) B 0° to 8° MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 0.110 L 1.78 2.79 0.070 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inches (7) Outline conforms to JEDEC® outline TO-263AB Revision: 13-Jul-17 Document Number: 96164 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Hyperlinks included in this datasheet may direct users to third-party websites. These links are provided as a convenience and for informational purposes only. Inclusion of these hyperlinks does not constitute an endorsement or an approval by Vishay of any of the products, services or opinions of the corporation, organization or individual associated with the third-party website. Vishay disclaims any and all liability and bears no responsibility for the accuracy, legality or content of the third-party website or for that of subsequent links. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2022 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000
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