VS-10ETS12SLHM3
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Vishay Semiconductors
High Voltage Surface Mount Input Rectifier Diode, 10 A
FEATURES
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C
Base
cathode
2
• Glass passivated pellet chip junction
• AEC-Q101 qualified
2
• Meets JESD 201 class 1A whisker test
3
1
1
Anode
• Flexible solution for reliable AC power
rectification
3
Anode
D2PAK (TO-263AB)
• High surge, low VF rugged blocking diode for DC charging
stations
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VR
1200 V
VF at IF
1.1 V
IFSM
160 A
TJ max.
150 °C
Package
D2PAK (TO-263AB)
Circuit configuration
Single
APPLICATIONS
• Input rectification
• On-board and off-board EV / HEV battery chargers
DESCRIPTION
The VS-10ETS12SLHM3 rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS
SINGLE-PHASE BRIDGE
THREE-PHASE BRIDGE
UNITS
12.0
16.0
A
Capacitive input filter TA = 55 °C, TJ = 125 °C
common heatsink of 1 °C/W
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
IF(AV)
CHARACTERISTICS
Sinusoidal waveform
VALUES
UNITS
10
A
VRRM
1200
V
IFSM
160
A
VF
10 A, TJ = 25 °C
1.1
V
-40 to +150
°C
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM
AT 150 °C
mA
1200
1300
0.5
TJ
VOLTAGE RATINGS
PART NUMBER
VS-10ETS12SLHM3
Revision: 22-Feb-18
Document Number: 96484
1
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VS-10ETS12SLHM3
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
Maximum average forward current
IF(AV)
TC = 105 °C, 180° conduction half sine wave
10
Maximum peak one cycle
non-repetitive surge current
IFSM
10 ms sine pulse, rated VRRM applied
135
10 ms sine pulse, no voltage reapplied
160
Maximum I2t for fusing
I2t
Maximum I2t for fusing
I2t
UNITS
A
10 ms sine pulse, rated VRRM applied
91
10 ms sine pulse, no voltage reapplied
130
t = 0.1 ms to 10 ms, no voltage reapplied
1290
A2s
VALUES
UNITS
A2s
ELECTRICAL SPECIFICATIONS
PARAMETER
Maximum forward voltage drop
Forward slope resistance
Threshold voltage
Maximum reverse leakage current
SYMBOL
VFM
rt
VF(TO)
IRM
TEST CONDITIONS
10 A, TJ = 25 °C
TJ = 150 °C
TJ = 25 °C
VR = rated VRRM
TJ = 150 °C
1.1
V
20
m
0.82
V
0.05
0.50
mA
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient (PCB mount)
SYMBOL
TEST CONDITIONS
TJ, TStg
RthJC
DC operation
UNITS
°C
2.5
°C/W
RthJA (1)
62
Approximate weight
Marking device
VALUES
-40 to +150
Case style D2PAK (TO-263AB)
2
g
0.07
oz.
10ETS12SH
Note
(1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W.
Revision: 22-Feb-18
Document Number: 96484
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETS12SLHM3
Vishay Semiconductors
150
RthJC (DC) = 2.5 °C/W
140
130
Ø
Conduction angle
120
110
100
30°
60°
90
90°
120°
180°
80
0
2
4
6
8
10
12
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
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20
16
14
12
RMS limit
10
8
6
Ø
Conduction period
120
30°
60°
90°
120°
180°
DC
90
0
16
2
4
6
8
10
12
14
16
18
0
0
12
4
6
8
10
12
14
16
Average Forward Current (A)
150
At any rated load condition and with
rated Vrrm applied following surge.
Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
140
130
120
110
100
90
80
70
60
50
40
30
1
10
100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
10
RMS limit
8
6
Ø
4
Conduction angle
2
TJ = 150 °C
0
0
2
Number of Equal Amplitude
Half Cycle Current Pulses (N)
180°
120°
90°
60°
30°
14
Peak Half Sine Wave Forward Current (A)
140
2
4
6
8
10
Peak Half Sine Wave Forward Current (A)
Maximum Allowable Case Temperature (°C)
Maximum Average Forward Power Loss (W)
RthJC (DC) = 2.5 °C/W
100
TJ = 150 °C
2
Fig. 4 - Forward Power Loss Characteristics
150
110
Ø
Conduction period
4
Fig. 1 - Current Rating Characteristics
130
DC
180°
120°
90°
60°
30°
18
170
150
130
Maximum non-repetitive surge current
vs. pulse train duration.
Initial TJ = TJ max.
No voltage reapplied
Rated Vrrm reapplied
110
90
70
50
30
10
0.01
0.1
1
10
Average Forward Current (A)
Pulse Train Duration (s)
Fig. 3 - Forward Power Loss Characteristics
Fig. 6 - Maximum Non-Repetitive Surge Current
Revision: 22-Feb-18
Document Number: 96484
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETS12SLHM3
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Instantaneous Forward Current (A)
Vishay Semiconductors
100
TJ = 25 °C
TJ = 150 °C
10
1
0
0.5
1.0
1.5
2.0
2.5
3.0
Instantaneous Forward Voltage (V)
ZthJC - Transient Thermal Impedance (°C/W)
Fig. 7 - Forward Voltage Drop Characteristics
10
Steady state value
(DC operation)
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Single pulse
0.1
0.0001
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance ZthJC Characteristics
Revision: 22-Feb-18
Document Number: 96484
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-10ETS12SLHM3
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS-
10
E
T
S
12
S
L
H
M3
1
2
3
4
5
6
7
8
9
10
1
-
Vishay Semicondutors product
2
-
Current rating (10 = 10 A)
3
-
Circuit configuration:
4
-
Package:
E = single
T = D2PAK (TO-263AB)
5
-
Type of silicon:
6
-
Voltage code x 100 = VRRM
7
-
S = surface mountable
8
-
L = tape and reel (left oriented), for different orientation,
contact factory
9
-
H = AEC-Q101 qualified
10
-
Environmental digit:
S = standard recovery rectifier
12 = 1200 V
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-10ETS12SLHM3
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
800
800
13" diameter reel
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95046
Part marking information
www.vishay.com/doc?95444
Packaging information
www.vishay.com/doc?96317
Revision: 22-Feb-18
Document Number: 96484
5
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
D2PAK
DIMENSIONS in millimeters and inches
Conforms to JEDEC® outline D2 PAK (SMD-220)
(2)(3)
E
B
Pad layout
A
A
(E)
c2
11.00
MIN.
(0.43)
A
(3) L1
4
9.65
MIN.
(0.38)
(D1) (3)
Detail A
D
H
1
2
17.90 (0.70)
15.00 (0.625)
(2)
3
3.81
MIN.
(0.15)
L2
B
B
2.32
MIN.
(0.08)
A
2 x b2
c
2.64 (0.103)
2.41 (0.096)
(3)
E1
C
View A - A
2xb
± 0.004 M B
0.010 M A M B
Plating
Base
Metal
(4)
b1, b3
H
2x e
Gauge
plane
c1 (4)
(c)
B
0° to 8°
Seating
plane
L3
Lead tip
A1
L
(b, b2)
L4
Section B - B and C - C
Scale: None
Detail “A”
Rotated 90 °CW
Scale: 8:1
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
SYMBOL
MILLIMETERS
MIN.
MAX.
INCHES
MIN.
MAX.
NOTES
A
4.06
4.83
0.160
0.190
D1
6.86
8.00
0.270
0.315
3
A1
0.00
0.254
0.000
0.010
E
9.65
10.67
0.380
0.420
2, 3
E1
7.90
8.80
0.311
0.346
3
b
0.51
0.99
0.020
0.039
b1
0.51
0.89
0.020
0.035
b2
1.14
1.78
0.045
0.070
b3
1.14
1.73
0.045
0.068
c
0.38
0.74
0.015
0.029
c1
0.38
0.58
0.015
0.023
c2
1.14
1.65
0.045
0.065
D
8.51
9.65
0.335
0.380
4
e
2.54 BSC
0.100 BSC
H
14.61
15.88
0.575
0.625
4
L
1.78
2.79
0.070
0.110
L1
-
1.65
-
0.066
4
L2
1.27
1.78
0.050
0.070
2
L4
L3
0.25 BSC
4.78
5.28
3
0.010 BSC
0.188
0.208
Notes
(1) Dimensioning and tolerancing per ASME Y14.5 M-1994
(2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3) Thermal pad contour optional within dimension E, L1, D1 and E1
(4) Dimension b1 and c1 apply to base metal only
(5) Datum A and B to be determined at datum plane H
(6) Controlling dimension: inch
(7) Outline conforms to JEDEC® outline TO-263AB
Revision: 08-Jul-15
Document Number: 95046
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
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