VS-20MQ100-M3/5AT

VS-20MQ100-M3 www.vishay.com Vishay Semiconductors High Performance Schottky Rectifier, 2 A FEATURES • Low forward voltage drop Cathode Anode • Guard ring for enhanced ruggedness and long term reliability • Small foot print, surface mountable • High frequency operation SMA (DO-214AC) • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C PRODUCT SUMMARY • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Package DO-214AC (SMA) IF(AV) 2A VR 100 V VF at IF 0.72 V IRM 1 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 1.0 mJ DESCRIPTION The VS-20MQ100-M3 surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection.   MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) CHARACTERISTICS VALUES UNITS 2 A Rectangular waveform VRRM 100 V IFSM tp = 5 μs sine 120 A VF 2 Apk, TJ = 125 °C 0.72 V TJ Range -55 to +150 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-20MQ100-M3 UNITS 100 V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current See fig. 4 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 6 IFSM Non-repetitive avalanche energy EAS Repetitive avalanche current IAR TEST CONDITIONS VALUES 50 % duty cycle at TL = 113 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 2.1 50 % duty cycle at TL = 116 °C, rectangular waveform On PC board 9 mm2 island (0.013 mm thick copper pad area) 2 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse TJ = 25 °C, IAS = 0.5 A, L = 8 mH Following any rated load condition and with rated VRRM applied UNITS A 120 A 30 1.0 mJ 0.5 A Revision: 12-Oct-11 Document Number: 93361 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MQ100-M3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 2A VFM (1) 0.78 2A 0.72 TJ = 125 °C 1A Threshold voltage IRM VF(TO) Forward slope resistance rt Typical junction capacitance CT Typical series inductance Maximum voltage rate of change LS dV/dt 0.85 1A 1.5 A Maximum reverse leakage current See fig. 2 UNITS 0.91 TJ = 25 °C 1.5 A Maximum forward voltage drop See fig. 1 VALUES V 0.68 0.63 TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz Measured lead to lead 5 mm from package body Rated VR 0.1 mA 1 0.52 V 78.4 m 38 pF 2.0 nH 10 000 V/μs VALUES UNITS -55 to +150 °C 80 °C/W 0.07 g Note (1) Pulse width = 300 μs, duty cycle = 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and  storage temperature range TJ (1), TStg Maximum thermal resistance,  junction to ambient RthJA TEST CONDITIONS DC operation Approximate weight Marking device 0.002 Case style SMA (similar D-64) oz. 2J Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Revision: 12-Oct-11 Document Number: 93361 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MQ100-M3 Vishay Semiconductors 10 Allowable Case Temperature (°C) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 °C TJ = 125 °C TJ = 25 °C 1 0.1 0.4 0.6 0.8 1 1.2 1.4 160 150 140 130 DC 120 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Square wave (D = 0.50) rated VR applied 110 100 90 80 70 see note (1) 60 0.0 1.6 1.0 1.5 2.0 2.5 3.0 3.5 IF(AV) - Average Forward Current (A) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 4 - Maximum Average Forward Current vs. Allowable Lead Temperature 3 1 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 Average Power Loss (W) TJ = 150 °C IR - Reverse Current (mA) 0.5 VFM - Forward Voltage Drop (V) 125 °C 0.1 100 °C 0.01 75 °C 0.001 50 °C 0.0001 25 °C 2.5 2 1.5 DC RMS Limit 1 0.5 0 0 0 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 2 - Typical Peak Reverse Current vs. Reverse Voltage 0 0.5 1 1.5 2 2.5 3 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Dissipation vs. Average Forward Current CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 0 20 40 60 80 100 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);  PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 12-Oct-11 Document Number: 93361 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-20MQ100-M3 www.vishay.com IFSM - Non-Repetitive Surge Current (A) Vishay Semiconductors 100 TJ = 25 ˚C At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (μs) Fig. 6 - Maximum Peak Surge Forward Current vs. Pulse Duration ORDERING INFORMATION TABLE Device code VS- 20 M Q 100 -M3 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating 3 - M = SMA 4 - Q = Schottky “Q” series 5 - Voltage rating (100 = 100 V) 6 - Environmental digit: -M3 = Halogen-free, RoHS-compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-20MQ100-M3/5AT PREFERRED PACKAGE CODE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 5AT 7500 13" diameter plastic tape and reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95400 Part marking information www.vishay.com/doc?95403 Packaging information www.vishay.com/doc?95404 Revision: 12-Oct-11 Document Number: 93361 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000