VS-3EYH02HM3/I

VS-3EYH01HM3, VS-3EYH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 3 A FRED Pt® FEATURES eSMP® Series • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • Low leakage current • Meets MSL level 1, per LF maximum peak of 260 °C Top View Bottom View • AEC-Q101 qualified, class 2 whisker test • Compatible to SOD-128 package case outline SlimSMAW (DO-221AD) Cathode J-STD-020, • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial, and automotive applications. 3D 3D 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 3A VR 100 V, 200 V VF at IF 0.71 V Case: SlimSMAW (DO-221AD) Molding compound meets UL 94 V-0 flammability rating Halogen-free, RoHS-compliant matte tin plated leads, IFSM 70 A Terminals: J-STD-002 trr (typ.) 16 ns Polarity: color band denotes cathode end TJ max. 175 °C Package SlimSMAW (DO-221AD) Circuit configuration Single solderable per ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage SYMBOL VS-3EYH01HM3 VS-3EYH02HM3 VALUES IF(AV) (1) Non-repetitive peak surge current IFSM UNITS 100 VRRM Average rectified forward current Operating junction and storage temperatures TEST CONDITIONS V 200 TC = 137 °C 3 TJ = 25 °C, 10 ms sine pulse wave 70 TJ, TStg A -55 to +175 °C Note (1) Mounted on infinite heatsink ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VS-3EYH01HM3 VBR, VR VS-3EYH02HM3 Forward voltage, per diode VF Reverse leakage current, per diode IR Junction capacitance CT TEST CONDITIONS IR = 100 μA MIN. TYP. MAX. 100 - - 200 - - IF = 3 A - 0.86 0.95 0.79 IF = 3 A, TJ = 150 °C - 0.71 VR = VR rated - - 2 TJ = 150 °C, VR = VR rated - - 20 VR = 200 V - 16 - UNITS V μA pF Revision: 28-Jan-2021 Document Number: 96384 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EYH01HM3, VS-3EYH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Reverse recovery time trr TEST CONDITIONS MIN. TYP. MAX. IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - 22 - IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V - 16 - IF = 0.5 A, IR = 1A, Irr = 0.25 A - - 30 TJ = 25 °C - 18 - TJ = 125 °C Peak recovery current IRRM Reverse recovery charge Qrr UNITS ns - 30 - - 2.5 - - 4 - TJ = 25 °C - 23 - TJ = 125 °C - 60 - MIN. TYP. MAX. UNITS -55 - 175 °C Infinite heatsink - 12 15 Device mounted on FR4 PCB, 2 oz. standard footprint - 120 150 TJ = 25 °C TJ = 125 °C IF = 3 A, dIF/dt = 200 A/μs, VR = 100 V A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, junction to mount Thermal resistance, junction to ambient Marking device VS-3EYH01HM3 VS-3EYH02HM3 TEST CONDITIONS TJ, TStg RthJM (1) RthJA Case style SlimSMAW (DO-221AD) °C/W 3H1 3H2 Note (1) Thermal resistance junction to mount follows JEDEC® 51-14 transient dual interface test method (TDIM) Revision: 28-Jan-2021 Document Number: 96384 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EYH01HM3, VS-3EYH02HM3 Vishay Semiconductors 100 100 175 °C IR - Reverse Current (μA) IF - Instantaneous Forward Current (A) www.vishay.com 10 TJ = 175 °C 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 150 °C 1 125 °C 0.1 25 °C 0.01 0.001 TJ = -40 °C 0.1 0.0001 0.4 0.6 0.8 1.0 1.2 1.4 50 100 VF - Forward Voltage Drop (V) 150 200 VR - Reverse Voltage (V) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 10 1 0 25 50 75 100 125 150 175 200 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1000 Junction to Ambient 100 Junction to Mount 10 1 0.1 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 28-Jan-2021 Document Number: 96384 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EYH01HM3, VS-3EYH02HM3 Vishay Semiconductors 180 40 170 35 160 30 trr (ns) Allowable Case Temperature (°C) www.vishay.com DC 150 140 125 °C 25 25 °C 20 Square wave (D = 0.50) rated VR applied 130 15 See note (1) 120 10 0 0.5 1 1.5 2 2.5 3 3.5 100 200 300 400 500 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 3.5 80 125 °C 70 3 60 2.5 2 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 DC 1.5 1 0.5 0 Qrr (nC) Average Power Loss (W) RMS limit 50 40 25 °C 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 100 200 300 400 500 IF(AV) - Average Forward Current (A) dIF/dt (A/μs) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 5); PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR (1) Revision: 28-Jan-2021 Document Number: 96384 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-3EYH01HM3, VS-3EYH02HM3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 3 E Y H 02 H M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (3 = 3 A) 3 - Circuit configuration: E = single diode 4 - Y = SlimSMAW (DO-221AD) 5 - Process type, 6 - Voltage code (02 = 200 V) 7 - H = AEC-Q101 qualified 8 - M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free H = hyperfast recovery ORDERING INFORMATION (Example) UNIT WEIGHT (g) PREFERRED PACKAGE CODE VS-3EYH01HM3/H 0.033 H 3500 7"diameter plastic tape and reel VS-3EYH01HM3/I 0.033 I 14 000 13"diameter plastic tape and reel VS-3EYH02HM3/H 0.033 H 3500 7"diameter plastic tape and reel VS-3EYH02HM3/I 0.033 I 14 000 13"diameter plastic tape and reel PREFERRED P/N BASE QUANTITY PACKAGING DESCRIPTION LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96582 Part marking information www.vishay.com/doc?95562 Packaging information www.vishay.com/doc?88869 SPICE model www.vishay.com/doc?96586 Revision: 28-Jan-2021 Document Number: 96384 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SlimSMAW (DO-221AD) DIMENSIONS in inches (millimeters) SlimSMAW (DO-221AD) Cathode band 0.106 (2.70) 0.091 (2.30) 0.075 (1.90) 0.063 (1.60) 0.032 (0.81) 0.014 (0.36) 0.158 (4.00) 0.142 (3.60) 0.024 (0.60) 0.012 (0.30) 0.197 (5.00) 0.173 (4.40) 0.043 (1.10) 0.035 (0.90) 0.009 (0.22) 0.004 (0.10) 0.083 (2.10) min. 0.055 (1.40) min. 0.118 (3.00) max. 0.055 (1.40) min. 0.228 (5.80) ref. Mounting pad layout Revision: 11-Dec-2018 Document Number: 96582 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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