VS-40TTS12HM3
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Vishay Semiconductors
Thyristor High Voltage, Phase Control SCR, 40 A
FEATURES
• Easy control peak current at charger power
up to reduce passive / electromechanical
components
2
(A)
• Flexible solution for reliable AC power
rectification
TO-220AB
1
2
• Meets JESD 201 class 1A whisker test
3
1 (K) (G) 3
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
PRIMARY CHARACTERISTICS
• On-board and off-board EV/HEV battery chargers
IT(AV)
25 A
VDRM/VRRM
1200 V
VTM
1.6 V
IGT
35 mA
TJ
-40 °C to 140 °C
Package
TO-220AB
Circuit configuration
Single SCR
• Renewable energy inverters
DESCRIPTION
The VS-40TTS12HM3 high voltage series of silicon
controlled rectifiers are specifically designed for medium
power switching and phase control applications.
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
IT(AV)
TEST CONDITIONS
Sinusoidal waveform
VALUES
UNITS
25
A
IRMS
40
VRRM/VDRM
1200
V
ITSM
350
A
1.6
V
500
V/µs
VT
TJ = 25 °C
dV/dt
dI/dt
TJ
150
A/µs
-40 to +140
°C
VOLTAGE RATINGS
PART NUMBER
VRRM, MAXIMUM PEAK
REVERSE VOLTAGE
V
VDRM, MAXIMUM
PEAK DIRECT VOLTAGE
V
TJ
°C
VS-40TTS12HM3
1200
1200
-25 to +140
Revision: 06-Jul-2018
Document Number: 96127
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VS-40TTS12HM3
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Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average on-state current
IT(AV)
Maximum RMS on-state current
IRMS
Maximum peak, one-cycle
non-repetitive surge current
ITSM
25
40
10 ms sine pulse, rated VRRM applied
300
10 ms sine pulse, no voltage reapplied
350
A
450
630
I2t
t = 0.1 to 10 ms, no voltage reapplied
6300
A2s
VTM
80 A, TJ = 25 °C
1.6
V
11.4
m
0.96
V
Maximum I2t for fusing
Maximum on-state voltage
Maximum reverse and direct leakage
current
UNITS
10 ms sine pulse, rated VRRM applied
I2t
Low level value of threshold voltage
TC = 93 °C, 180° conduction half sine wave
VALUES
10 ms sine pulse, no voltage reapplied
Maximum I2t for fusing
Low level value of on-state slope resistance
TEST CONDITIONS
rt
VT(TO)
IRRM/IDRM
TJ = 140 °C
TJ = 25 °C
TJ = 140 °C
VR = Rated VRRM/VDRM
Holding current
IH
Anode supply = 6 V, resistive load, initial IT = 1 A,
TJ = 25 °C
Maximum latching current
IL
Anode supply = 6 V, resistive load, TJ = 25 °C
Maximum rate of rise of off-state voltage
dV/dt
Maximum rate of rise of turned-on current
dI/dt
TJ = TJ max., linear to 80 °C, VDRM = Rg - k = Open
A2s
0.5
12
100
200
mA
500
V/μs
150
A/μs
VALUES
UNITS
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
PGM
8.0
PG(AV)
2.0
Maximum peak positive gate current
+ IGM
1.5
A
Maximum peak negative gate voltage
- VGM
10
V
Maximum required DC gate current to
trigger
IGT
Anode supply = 6 V, resistive load, TJ = 25 °C
35
mA
Maximum required DC gate
voltage to trigger
VGT
Anode supply = 6 V, resistive load, TJ = 25 °C
1.3
Maximum DC gate voltage not to trigger
VGD
Maximum DC gate current not to trigger
IGD
Maximum peak gate power
Maximum average gate power
TJ = 140 °C, VDRM = Rated value
W
V
0.2
1.5
mA
VALUES
UNITS
SWITCHING
PARAMETER
SYMBOL
Typical turn-on time
tgt
Typical reverse recovery time
trr
Typical turn-off time
tq
TEST CONDITIONS
TJ = 25 °C
TJ = 140 °C
0.9
4
μs
110
Revision: 06-Jul-2018
Document Number: 96127
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-40TTS12HM3
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Vishay Semiconductors
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction and storage
temperature range
TJ, TStg
Maximum thermal resistance,
junction to case
RthJC
Maximum thermal resistance,
junction to ambient
RthJA
Typical thermal resistance,
case to heatsink
RthCS
TEST CONDITIONS
VALUES
UNITS
-40 to 140
°C
DC operation
0.8
Mounting surface, smooth, and greased
0.5
Approximate weight
Mounting torque
g
0.07
oz.
6 (5)
maximum
12 (10)
kgf · cm
(lbf · in)
140
RthJC (DC) = 0.8 ˚C/W
130
120
Conduction Angle
110
30˚
100
60˚
90˚
90
120˚
80
180˚
70
0
5
10
15
20
25
30
40TTS12H
Maximum Average On-state Power Loss (W)
Case style TO-220AB
60
180˚
120˚
90˚
60˚
30˚
50
40
30
RMS Limit
20
Conduction Angle
10
Tj = 125˚C
0
0
5
10
15
20
25
30
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
Fig. 3 - On-State Power Loss Characteristics
140
RthJC (DC) = 0.8 ˚C/W
130
120
Conduction Period
110
100
30˚
90
60˚
80
90˚
120˚
180˚
70
0
5
DC
10 15 20 25 30 35 40 45
Maximum Average On-state Power Loss (W)
Maximum Allowable Case Temperature (°C
2
minimum
Marking device
Maximum Allowable Case Temperature (°C)
°C/W
60
70
DC
180˚
120˚
90˚
60˚
30˚
60
50
40
30 RMS Limit
20
Conduction Period
10
Tj = 125˚C
0
0
10
20
30
40
Average On-state Current (A)
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 4 - On-State Power Loss Characteristics
Revision: 06-Jul-2018
Document Number: 96127
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VS-40TTS12HM3
280
Vishay Semiconductors
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
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At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
260
240
220
200
180
160
140
120
1
10
400
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
350 Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
No Voltage Reapplied
300
Rated Vrrm Reapplied
250
200
150
100
0.01
100
0.1
1
10
Pulse Train Duration (s)
Number of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
Tj = 25˚C
Tj = 125˚C
100
10
1
0
1
2
3
4
5
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
Rectangular gate pulse
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
= 6 µs
(1) PGM = 40 W, tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
(a)
(b)
(4)
(3)
(2)
(1)
Frequency Limited by PG(AV)
IGD
0.1
0.001
TJ = -10 ˚C
TJ = 140 ˚C
1 VGD
TJ = 25 ˚C
Instantaneous Gate Voltage (V)
100
0.01
0.1
1
Instantaneous Gate Current (A)
10
100
Fig. 8 - Gate Characteristics
Revision: 06-Jul-2018
Document Number: 96127
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VS-40TTS12HM3
Transient Thermal Impedance ZthJC (°C/W)
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Vishay Semiconductors
1
Steady State Value
(DC Operation)
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 9 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
Device code
VS-
40
T
T
S
12
H
M3
1
2
3
4
5
6
7
8
1
-
Vishay Semiconductors product
2
-
Current rating, RMS value
3
-
Circuit configuration:
4
-
T = single thyristor
Package:
T = TO-220
5
-
Type of silicon:
S = standard recovery rectifier
6
-
Voltage rating (12 = 1200 V)
7
-
H = AEC-Q101 qualified
8
-
Environmental digit:
M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-40TTS12HM3
50
1000
Antistatic plastic tubes
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
www.vishay.com/doc?95222
TO-220AB
www.vishay.com/doc?95028
Revision: 06-Jul-2018
Document Number: 96127
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
(b, b2)
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead tip
Conforms to JEDEC® outline TO-220AB
SYMBOL
MILLIMETERS
INCHES
MIN.
MAX.
MIN.
MAX.
A
4.25
4.65
0.167
0.183
A1
1.14
1.40
0.045
0.055
NOTES
SYMBOL
MILLIMETERS
INCHES
NOTES
MIN.
MAX.
MIN.
MAX.
D2
11.68
12.88
0.460
0.507
6
E
10.11
10.51
0.398
0.414
3, 6
A2
2.56
2.92
0.101
0.115
E1
6.86
8.89
0.270
0.350
6
b
0.69
1.01
0.027
0.040
E2
-
0.76
-
0.030
7
b1
0.38
0.97
0.015
0.038
4
e
2.41
2.67
0.095
0.105
b2
1.20
1.73
0.047
0.068
e1
4.88
5.28
0.192
0.208
b3
1.14
1.73
0.045
0.068
4
H1
5.84
6.86
0.230
0.270
c
0.36
0.61
0.014
0.024
L
13.52
14.02
0.532
0.552
c1
0.36
0.56
0.014
0.022
4
L1
3.32
3.82
0.131
0.150
D
14.85
15.25
0.585
0.600
3
ØP
3.54
3.73
0.139
0.147
D1
8.38
9.02
0.330
0.355
Q
2.60
3.00
0.102
0.118
6, 7
2
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and E1
(7) Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8) Outline conforms to JEDEC® TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package
outline
Revision: 06-Mar-2020
Document Number: 95222
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Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical
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about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product
with the properties described in the product specification is suitable for use in a particular application. Parameters provided in
datasheets and / or specifications may vary in different applications and performance may vary over time. All operating
parameters, including typical parameters, must be validated for each customer application by the customer's technical experts.
Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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