VS-80APS12-M3

VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors High Voltage, Input Rectifier Diode, 80 A FEATURES Base cathode • Very low forward voltage drop 2 • 150 °C max. operating junction temperature • Glass passivated pellet chip junction 1 • Designed and qualified JEDEC®-JESD 47 2 3 TO-247AC 3L 1 Anode according to Available • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 Anode APPLICATIONS PRIMARY CHARACTERISTICS • Input rectification IF(AV) 80 A VR 800 V to 1200 V • Vishay Semiconductors switches and output rectifiers which are available in identical package outlines VF at IF 1.17 V DESCRIPTION IFSM 1500 A TJ max. 150 °C High voltage rectifiers optimized for very low forward voltage drop with moderate leakage. Package TO-247AC 3L Circuit configuration Single These devices are intended for use in main rectification (single or three phase bridge). MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Sinusoidal waveform VRRM Range VALUES UNITS 80 A 800/1200 V 1500 A 1.17 V -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA IFSM VF 80 A, TJ = 25 °C TJ VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-80APS08-M3 800 900 VS-80APS12-M3 1200 1300 1.5 ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle  non-repetitive surge current SYMBOL TEST CONDITIONS IF(AV) TC = 100 °C, 180° conduction half sine wave IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t VALUES UNITS 80 10 ms sine pulse, rated VRRM applied 1450 10 ms sine pulse, no voltage reapplied 1500 10 ms sine pulse, rated VRRM applied 10 500 10 ms sine pulse, no voltage reapplied 14 000 t = 0.1 ms to 10 ms, no voltage reapplied 140 000 A A2s A2s Revision: 27-Feb-2019 Document Number: 93794 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop VFM Forward slope resistance rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 80 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C 1.17 V 3.17 m 0.73 V 0.1 VR = Rated VRRM TJ = 150 °C UNITS mA 1.5 THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage  temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance,  junction to case RthJC Maximum thermal resistance,  junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS VALUES UNITS -40 to 150 °C DC operation 0.35 40 Mounting surface, flat, smooth and greased 0.2 Approximate weight Mounting torque 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (lbf · in) Marking device 80APS08 Case style TO-247AC 3L 150 80APS12 150 VS-80APS.. Series RthJC (DC) = 0.35 K/W 140 130 Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperture (°C) °C/W Ø Conduction angle 120 110 30° 60° 100 90° 120° 90 VS-80APS.. Series RthJC (DC) = 0.35 K/W 140 130 Ø Conduction period 120 30° 60° 90° 110 120° 180° 100 DC 180° 90 80 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 Average Forward Current (A) Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics 140 Revision: 27-Feb-2019 Document Number: 93794 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors 1600 180° 120° 90° 60° 30° 100 80 RMS limit 60 Ø 40 Conduction angle 20 VS-80APS.. Series TJ = 150 °C Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1200 1000 800 VS-80APS.. Series 600 400 0 0 10 20 30 40 50 60 80 70 1 90 Fig. 3 - Forward Power Loss Characteristics 160 100 80 RMS limit Ø 60 Conduction period 40 VS-80APS.. Series TJ = 150 °C 20 1200 1000 800 600 400 VS-80APS.. Series 200 0.01 0 0 20 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150°C No voltage reapplied Rated Vrrm reapplied 1400 Peak Half Sine Wave Forward Current (A) 120 100 1600 DC 180° 120° 90° 60° 30° 140 10 Number of Equal Amplitude Half Cycle Current Pulse (N) Fig. 5 - Maximum Non-Repetitive Surge Current Average Forward Current (A) Maximum Average Forward Power Loss (W) At any rated load condition and with rated VRRM applied following surge. 1400 Peak Half Sine Wave Forward Current (A) Maximum Average Forward Power Loss (W) 120 40 60 80 100 120 140 0.1 1 10 Pulse Train Duration (s) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous Forward Current (A) Average Forward Current (A) 1000 100 TJ = 25 °C 10 TJ = 150 °C VS-80APS.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics Revision: 27-Feb-2019 Document Number: 93794 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80APS..-M3 Series www.vishay.com Vishay Semiconductors 1 ZthJC - Transient Thermal Impedance (°C/W) Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 0.01 0.0001 0.001 VS-80APS.. Series 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance ZthJC Characteristics ORDERING INFORMATION TABLE Device code VS- 80 A P S 12 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (80 = 80 A) 3 - Circuit configuration: 4 - Package: -M3 A = single diode, 3 pins P = TO-247AC 3L 5 - Type of silicon: 6 - Voltage ratings S = standard recovery rectifier 7 08 = 800 V 12 = 1200 V Environmental digit: -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-80APS08-M3 25 500 Antistatic plastic tubes VS-80APS12-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?96138 Part marking information www.vishay.com/doc?95007 SPICE model www.vishay.com/doc?95550 Revision: 27-Feb-2019 Document Number: 93794 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-247AC 3L DIMENSIONS in millimeters and inches A A E (3) B A2 S R/2 (2) (Datum B) Ø P (6) Ø P1 Ø K M DBM A Q D2 2 x R (2) D1 (4) D Thermal pad 2 1 4 D 3 L1 (5) C L A See view B 2 x b2 3xb 0.10 M C A M C 2x e A1 b4 E1 (4) 0.01 M D B M (b1, b3, b5) Plating View A - A Base metal D DE (c) c1 (b, b2, b4) C A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.17 1.37 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.34 2.59 3.43 2.59 3.38 0.38 0.89 0.38 0.84 19.71 20.70 13.08 - C (4) View B Section C - C, D - D, E - E SYMBOL E INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.046 0.054 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.092 0.102 0.135 0.102 0.133 0.015 0.035 0.015 0.033 0.776 0.815 0.515 - NOTES 3 4 SYMBOL D2 E E1 e ØK L L1 ØP Ø P1 Q R S MILLIMETERS MIN. MAX. 0.51 1.35 15.29 15.87 13.46 5.46 BSC 0.254 14.20 16.10 3.71 4.29 3.56 3.66 7.39 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.053 0.602 0.625 0.53 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.14 0.144 0.291 0.209 0.224 0.178 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC® outline TO-247 with exception of dimension Q Revision: 20-Jun-17 Document Number: 96138 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2019 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 01-Jan-2019 1 Document Number: 91000