VS-90EPF06L-M3

VS-90EPF06L-M3, VS-90APF06L-M3 www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 90 A FEATURES • Glass passivated pellet chip junction • Low forward voltage drop and short reverse recovery time 2 1 1 • Designed and JEDEC®-JESD 47 2 3 3 TO-247AD 2L Base cathode 2 1 Cathode 3 Anode VS-90EPF06L-M3 Base cathode 2 These devices are intended for use in output rectification and freewheeling in inverters, choppers and converters as well as in input rectification where severe restrictions on conducted EMI should be met. DESCRIPTION VS-90APF06L-M3 PRIMARY CHARACTERISTICS IF(AV) VR VF at IF IFSM trr TJ max. Package Circuit configuration Snap factor to APPLICATIONS 3 Anode 1 according • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-247AD 3L Anode qualified 90 A 600 V 1.3 V 1000 A 70 ns 150 °C TO-247AD 2L, TO-247AD 3L Single 0.5 The VS-90EPF006L-M3, VS-90APF006L-M3 soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.      MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VRRM IF(AV) Sinusoidal waveform VALUES UNITS 600 V 90 1000 IFSM trr 1 A, -100 A/μs VF 40 A, TJ = 25 °C TJ Range 70 A ns 1.12 V -40 to +150 °C VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM AT 150 °C mA VOLTAGE RATINGS PART NUMBER VRRM, MAXIMUM PEAK REVERSE VOLTAGE V VS-90EPF06L-M3 600 700 17 VS-90APF06L-M3 600 700 17 Revision: 06-Jul-2018 Document Number: 95694 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF06L-M3, VS-90APF06L-M3 www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t TEST CONDITIONS VALUES TC = 108 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 850 10 ms sine pulse, no voltage reapplied 1000 10 ms sine pulse, rated VRRM applied 3610 10 ms sine pulse, no voltage reapplied 5100 t = 0.1 ms to 10 ms, no voltage reapplied UNITS 90 A A2s A2s 51 000 ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Maximum forward voltage drop Forward slope resistance VFM rt Threshold voltage VF(TO) Maximum reverse leakage current IRM TEST CONDITIONS VALUES 90 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C V 3.5 m 0.85 V 0.1 VR = rated VRRM TJ = 150 °C UNITS 1.3 mA 17 RECOVERY CHARACTERISTICS PARAMETER SYMBOL Reverse recovery time trr Reverse recovery current Irr Reverse recovery charge Qrr Snap factor TEST CONDITIONS IF at 40 Apk 25 A/μs 25 °C S VALUES UNITS 190 ns 3.4 A 0.5 μC IFM trr t di dt 0.5 Qrr IRM(REC) THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance,  case to heatsink RthCS DC operation Marking device UNITS -40 to +150 °C 0.2 °C/W 40 Mounting surface, smooth, and greased 0.25 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf · cm (Ibf · in) Approximate weight Mounting torque VALUES Case style TO-247AD 2L 90EPF06L Case style TO-247AD 3L 90APF06L Revision: 06-Jul-2018 Document Number: 95694 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF06L-M3, VS-90APF06L-M3 Vishay Semiconductors 150 RthJC (DC) = 0.2 °C/W 140 Ø 130 Conduction angle 120 110 30° 100 60° 90° 90 120° 180° 80 0 20 40 60 80 100 Max. Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C) www.vishay.com 200 180° 120° 90° 60° 30° 180 160 140 DC 120 100 RMS limit 80 Ø 60 Conduction angle 40 TJ = 150 °C 20 0 0 30 Average On-State Current (A) 60 90 120 150 Average On-State Current (A) Fig. 1 - Current Rating Characteristics 150 1000 RthJC (DC) = 0.2 °C/W At any rated load condition and with rated VRRM applied following surge. 900 140 Peak Half Sine Wave Forward Current (A) Ø Conduction angle 130 120 110 30° 60° 100 90° 90 DC° 180° 20 40 60 700 600 500 400 200 80 0 Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 800 300 120° 80 100 120 140 1 160 10 100 Average On-State Current (A) Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current 1000 150 180° 120° 90° 60° 30° 120 900 Peak Half Sine Wave Forward Current (A) Max. Average On-State Power Loss (W) Maximum Allowable Case Temperature (°C) Fig. 4 - Forward Power Loss Characteristics 90 RMS limit Ø 60 Conduction angle 30 TJ = 150 °C 20 40 60 Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied 800 700 600 500 400 300 0 0 Maximum non-repetitive surge current versus pulse train duration. 80 100 Average On-State Current (A) Fig. 3 - Forward Power Loss Characteristics 200 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Revision: 06-Jul-2018 Document Number: 95694 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF06L-M3, VS-90APF06L-M3 Instantaneous Forward Current (A) www.vishay.com Vishay Semiconductors 1000 100 TJ = 25 °C TJ = 150 °C 10 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 4.0 0.22 IFM = 125 A 3.5 0.18 IFM = 40 A IFM = 80 A 0.16 IFM = 20 A IFM = 10 A 0.14 0.12 0.10 0.08 0.06 Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (µs) 0.20 0.04 IFM = 40 A 2.5 2.0 IFM = 20 A 1.5 IFM = 10 A 1.0 IFM = 1 A 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.6 14 0.5 12 Qrr - Typical Reverse Recovery Charge (µC) trr - Typical Reverse Recovery Time (µs) IFM = 80 A 3.0 0.5 IFM = 1 A TJ = 25 °C IFM = 125 A TJ = 25 °C IFM = 80 A 0.4 IFM = 40 A 0.3 IFM = 20 A IFM = 10 A 0.2 IFM = 1 A 0.1 IFM = 80 A TJ = 150 °C 10 8 IFM = 40 A 6 IFM = 20 A IFM = 10 A 4 2 TJ = 150 °C IFM = 1 A 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Revision: 06-Jul-2018 Document Number: 95694 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF06L-M3, VS-90APF06L-M3 www.vishay.com Vishay Semiconductors 45 22 IFM = 125 A TJ = 25 °C 18 40 IFM = 80 A Irr - Typical Reverse Recovery Current (A) Irr - Typical Reverse Recovery Current (A) 20 IFM = 40 A 16 14 IFM = 20 A 12 IFM = 10 A 10 8 6 IFM = 1 A 4 TJ = 150 °C 35 IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 1 A 30 25 20 15 10 5 2 0 0 0 40 80 120 160 200 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (°C/W) dI/dt - Rate of Fall of Forward Current (A/µs) 1 0.5 0.1 0.33 0.25 0.17 0.08 Single pulse 0.01 0.0001 0.001 0.01 0.1 1 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Revision: 06-Jul-2018 Document Number: 95694 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-90EPF06L-M3, VS-90APF06L-M3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 90 A P F 06 L -M3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (90 = 90 A) 3 - Circuit configuration: E = single, 2 pins A = single, 3 pins 4 - Package: 5 - Type of silicon: P = TO-247AD F = fast recovery 6 - Voltage code x 100 = VRRM 7 - L = long lead 8 - Environmental digit: 06 = 600 V -M3 = halogen-free, RoHS-compliant, and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBES MINIMUM ORDER QUANTITY VS-90EPF06L-M3 25 500 PACKAGING DESCRIPTION Antistatic plastic tubes VS-90APF06L-M3 25 500 Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions Part marking information TO-247AD 2L www.vishay.com/doc?95536 TO-247AD 3L www.vishay.com/doc?95626 TO-247AD 2L www.vishay.com/doc?95648 TO-247AD 3L www.vishay.com/doc?95007 Revision: 06-Jul-2018 Document Number: 95694 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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