VS-GB100DA60UP

Not Available for New Designs, Use VS-GB90DA60U VS-GB100DA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery • Fully isolated package SOT-227 • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY VCES 600 V IC DC 100 A at 61 °C VCE(on) typical at 100 A, 25 °C 2.4 V IF DC 100 A at 85 °C Package SOT-227 Circuit Single Switch Diode BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Higher switching frequency up to 150 kHz • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 600 V TC = 25 °C 125 TC = 80 °C 85 Pulsed collector current ICM 300 Clamped inductive load current ILM 300 Diode continuous forward current IF TC = 25 °C TC = 80 °C 160 105 Peak diode forward current IFM 200 Gate to emitter voltage VGE ± 20 Power dissipation, IGBT PD Power dissipation, diode Isolation voltage Revision: 13-Sep-13 PD VISOL A TC = 25 °C 447 TC = 80 °C 250 TC = 25 °C 313 TC = 80 °C 175 Any terminal to case, t = 1 min 2500 V W V Document Number: 93001 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA60U VS-GB100DA60UP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current Forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 250 μA 600 - - VGE = 15 V, IC = 100 A - 2.4 2.8 VGE = 15 V, IC = 100 A, TJ = 125 °C - 3 3.4 VCE = VGE, IC = 250 μA 3 3.9 5 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -10 - mV/°C VGE = 0 V, VCE = 600 V - 7 100 μA VGE = 0 V, VCE = 600 V, TJ = 150 °C - 4 10 mA IC = 100 A, VGE = 0 V - 1.6 2.1 IC = 100 A, VGE = 0 V, TJ = 125 °C - 1.7 2 VGE = ± 20 V - - ± 200 nA UNITS V V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL MIN. TYP. MAX. - 460 690 - 160 250 - 70 130 - 0.36 - - 1.42 - - 1.78 - - 0.52 - - 1.6 - - 2.12 - - 264 - - 54 - td(off) - 257 - tf - 80 - Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr TEST CONDITIONS IC = 100 A, VCC = 480 V, VGE = 15 V IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C nC mJ IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5   L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery (see fig. 18) ns TJ = 150 °C, IC = 300 A, Rg = 22  Reverse bias safe operating area RBSOA Fullsquare VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V, L = 500 μH Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Revision: 13-Sep-13 IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs,  VR = 200 V, TJ = 125 °C - 95 120 ns - 10 13 A - 480 780 nC - 144 185 ns - 16 19 A - 1136 1758 nC Document Number: 93001 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA60U VS-GB100DA60UP www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction and storage temperature range IGBT Junction to case Diode Case to heatsink SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - 150 °C - - 0.28 - - 0.4 - 0.05 - - 30 - g - - 1.3 Nm RthJC RthCS Flat, greased surface Weight Mounting torque Case style SOT-227 200 160 Allowable case temperature (°C) °C/W 140 120 Tj = 25°C 150 IC (A) 100 80 100 60 Tj = 125°C 40 50 20 0 0 0 20 40 60 80 100 120 140 0 1 2 Continuous collector current, IC (A) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature 4 5 Fig. 3 - Typical IGBT Collector Current Characteristics 160 Allowable case temperature (°C) 1000 100 IC (A) 3 VCE (V) 10 1 0 140 120 100 80 60 40 20 0 1 Revision: 13-Sep-13 10 100 1000 0 20 40 60 80 100 120 140 160 180 VCE (V) Continuous forward current, IF (A) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Fig. 4 - Maximum DC Forward Current vs. Case Temperature Document Number: 93001 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA60U VS-GB100DA60UP www.vishay.com Vishay Semiconductors 200 4 3.5 150 3 100 A VCE (V) IF (A) 2.5 100 75 A 2 27 A 1.5 50 1 Tj = 125°C 0.5 Tj = 25°C 0 0 0 0.5 1 1.5 2 2.5 20 40 60 80 100 120 140 160 VFM (V) TJ (°C) Fig. 5 - Typical Diode Forward Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 1.8 10 1.6 TJ = 125°C 1 EOFF 1.4 Energy (mJ) 1.2 ICES (mA) 0.1 0.01 1 0.8 0.6 TJ = 25°C EON 0.4 0.001 0.2 0 0.0001 100 200 300 400 500 10 600 30 50 90 110 IC (A) VCES (V) Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 4.5 1000 TJ = 25°C tdOFF Switching time (μs) 4 Vgeth (V) 70 3.5 TJ = 125°C 3 tdON tF 100 tR 2.5 2 0.0002 10 0.0004 0.0006 0.0008 0.001 IC (mA) Fig. 7 - Typical IGBT Threshold Voltage Revision: 13-Sep-13 0 20 40 60 80 100 120 IC (A) Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V Document Number: 93001 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA60U VS-GB100DA60UP 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 Vishay Semiconductors 210 190 170 150 EOFF trr (ns) Energy (mJ) www.vishay.com TJ = 125°C 130 TJ = 25°C 110 EON 90 70 50 0 10 20 30 40 100 50 1000 dIF/dt (A/μs) RG (Ω) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 360 V, VGE = 15 V Fig. 13 - Typical trr diode vs. dIF/dt VRR = 200 V, IF = 50 A 1000 40 tdON 35 30 25 tF Irr (A) Switching time (μs) tdOFF 100 TJ = 125°C 20 TJ = 25°C 15 tR 10 5 0 10 0 10 20 30 40 100 50 1000 dIF/dt (A/μs) RG (Ω) ZthJC - Thermal impedance junction to case (°C/W ) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 360 V, IC = 100 A, VGE = 15 V Fig. 14 - Typical Irr diode vs. dIF/dt VRR = 200 V, IF = 50 A 1 D = 0.50 0.1 0.20 0.01 0.10 0.05 0.02 0.01 0.001 0.0001 1E-005 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 0.001 0.01 0.1 1 Rectangular pulse duration (t1) Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Revision: 13-Sep-13 Document Number: 93001 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA60U VS-GB100DA60UP ZthJC - Thermal impedance junction to case (°C/W ) www.vishay.com Vishay Semiconductors 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-005 0.0001 0.001 0.01 0.1 1 Rectangular pulse duration (t1) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (diode) R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 17a - Clamped Inductive Load Test Circuit Fig. 17b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V D.U.T./ driver + VCC Rg Fig. 18a - Switching Loss Test Circuit Revision: 13-Sep-13 Document Number: 93001 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA60U VS-GB100DA60UP www.vishay.com Vishay Semiconductors 1 2 90 % 10 % 3 VC 90 % td(off) 10 % IC 5% tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 18b - Switching Loss Waveforms Test Circuit ORDERING INFORMATION TABLE Device code VS- G B 100 D A 60 U P 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (100 = 100 A) 5 - Circuit configuration (D = Single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (60 = 600 V) 8 - Speed/type (U = Ultrafast IGBT) 9 - Totally lead (Pb)-free CIRCUIT CONFIGURATION 3 (C) 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Revision: 13-Sep-13 Document Number: 93001 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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