GT100DA60U

GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC 600 V 100 A at 117 °C 1.72 V 100 A at 25 °C PRODUCT SUMMARY VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Speed 4 kHz to 30 kHz • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Peak diode forward current Gate to emitter voltage Power dissipation, IGBT SYMBOL VCES IC (1) ICM ILM IF IFSM VGE PD PD VISOL TC = 25 °C TC = 117 °C TC = 25 °C TC = 117 °C Any terminal to case, t = 1 min TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 600 184 137 350 350 100 71 200 ± 20 577 223 205 79 2500 V W V A UNITS V Power dissipation, diode Isolation voltage Note (1) Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals Document Number: 93185 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES TEST CONDITIONS VGE = 0 V, IC = 250 μA VGE = 15 V, IC = 100 A VGE = 15 V, IC = 100 A, TJ = 125 °C VCE = VGE, IC = 250 μA VCE = VGE, IC = 1 mA (25 °C to 125 °C) VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 125 °C IF = 40 A, VGE = 0 V IF = 40 A, VGE = 0 V, TJ = 125 °C VGE = ± 20 V MIN. 600 3.5 TYP. 1.72 2.0 4.6 - 16.8 0.6 0.15 1.78 1.39 MAX. 2.0 V 2.2 6.5 100 3 2.21 V 1.74 ± 200 nA mV/°C μA mA UNITS Forward voltage drop Gate to emitter leakage current VFM IGES SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area Diode reverse recovery time Diode peak reverse current Diode recovery charge Diode reverse recovery time Diode peak reverse current Diode recovery charge Short circuit safe operating area SYMBOL Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf RBSOA trr Irr Qrr trr Irr Qrr SCSOA TJ = 175 °C, Rg = 22 , VGE = 15 V to 0 V, VCC = 400 V, Vp = 600 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V TJ = 175 °C, IC = 350 A, Rg = 22  VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V, L = 500 μH IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 125 °C TEST CONDITIONS IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C Energy losses include tail and diode recovery (see fig. 18) MIN. TYP. 0.35 2.08 2.43 0.41 2.83 3.24 162 55 150 129 Fullsquare 61 4 120 133 12 750 3 85 7 297 154 15 1150 ns A nC ns A nC μs MAX. mJ ns UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93185 Revision: 22-Jul-10 GT100DA60U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range IGBT Junction to case Diode Case to sink per module Mounting torque, 6-32 or M3 screw Weight RthJC RthCS SYMBOL TJ, TStg MIN. - 40 TYP. 0.05 30 MAX. 175 0.26 0.73 1.3 Nm g °C/W UNITS °C Vishay Semiconductors Allowable Case Temperature (°C) 180 160 140 120 300 275 250 225 200 175 150 125 100 75 50 25 0 0 20 40 60 80 100 120 140 160 180 200 93185_02 TJ = 125 °C IC (A) 100 80 60 40 20 0 TJ = 25 °C TJ = 175 °C 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 93185_01 IC - Continuous Collector Current (A) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature VCE (V) Fig. 3 - Typical IGBT Collector Current Characteristics VGE = 15 V Allowable Case Temperature (°C) 1000 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 100 IC (A) 10 1 0.1 0.01 1 93185_02 10 100 1000 93185_04 VCE (V) Fig. 2 - IGBT Reverse Bias SOA TJ = 175 °C, VGE = 15 V IF - Continuous Forward Current (A) Fig. 4 - Maximum DC Forward Current vs. Case Temperature Document Number: 93185 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 GT100DA60U Vishay Semiconductors 200 175 150 125 100 75 50 25 0 0 93185_05 Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 2.5 TJ = 175 °C 2.0 100 A TJ = 125 °C VCE (V) IF (A) 1.5 TJ = 25 °C 50 A 27 A 1.0 0.5 1.0 1.5 2.0 2.5 3.0 93185_08 20 60 100 140 180 VFM (V) Fig. 5 - Typical Diode Forward Characteristics TJ (°C) Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 10 1 0.1 TJ = 175 °C 3.0 2.5 2.0 Eoff 1.5 1.0 0.5 0 200 300 400 500 600 93185_09 10 30 50 70 90 110 TJ = 125 °C 0.01 0.001 0.0001 0.00001 100 TJ = 25 °C Energy (mJ) ICES (mA) Eon 93185_06 VCES (V) IC (A) Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current 5.0 TJ = 25 °C 1000 tf Switching Time (ns) 4.5 td(off) 100 td(on) Vgeth (V) 4.0 3.5 3.0 TJ = 125 °C 2.5 0.2 93185_07 tr 10 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 93185_10 0 20 40 60 80 100 120 IC (mA) Fig. 7 - Typical IGBT Threshold Voltage IC (A) Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93185 Revision: 22-Jul-10 GT100DA60U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A 6 5 4 3 2 1 0 0 93185_11 10 20 30 40 50 Eon 190 170 150 Vishay Semiconductors Energy (mJ) trr (ns) Eoff 130 110 90 70 50 30 100 93185_13 TJ = 125 °C TJ = 25 °C 1000 Rg (Ω) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 360 V, VGE = 15 V dIF/dt (A/μs) Fig. 13 - Typical trr Diode vs. dIF/dt Vrr = 200 V, IF = 50 A 1000 td(on) 30 25 Switching Time (ns) td(off) 20 TJ = 125 °C 100 tf tr Irr (A) 15 10 5 TJ = 25 °C 10 0 93185_12 10 20 30 40 50 93185_14 0 100 1000 Rg (Ω) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 360 V, IC = 100 A, VGE = 15 V 1400 1200 1000 TJ = 125 °C dIF/dt (A/μs) Fig. 14 - Typical Irr Diode vs. dIF/dt Vrr = 200 V, IF = 50 A Qrr (nC) 800 600 400 TJ = 25 °C 200 0 100 1000 93185_15 dIF/dt (A/μs) Fig. 15 - Typical Qrr Diode vs. dIF/dt Vrr = 200 V, IF = 50 A Document Number: 93185 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 GT100DA60U Vishay Semiconductors 1 Insulated Gate Bipolar Transistor (Trench IGBT), 100 A ZthJC - Thermal Impedance Junction to Case (°C/W) 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.01 0.001 0.00001 93185_16 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) 1 ZthJC - Thermal Impedance Junction to Case (°C/W) 0.1 0.01 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 DC 0.001 0.00001 93185_17 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode) www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93185 Revision: 22-Jul-10 GT100DA60U Insulated Gate Bipolar Transistor (Trench IGBT), 100 A Vishay Semiconductors R= L VC * 50 V 1000 V 1 2 VCC D.U.T. ICM D.U.T. Rg + -V CC * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 18a - Clamped Inductive Load Test Circuit Fig. 18b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L -+ -5V D.U.T./ driver Rg + VCC Fig. 19a - Switching Loss Test Circuit 1 2 90 % 3 VC 90 % 10 % td(off) 10 % IC 5% tr td(on) tf t = 5 µs Eon Ets = (Eon + Eoff) Eoff Fig. 19b - Switching Loss Waveforms Test Circuit Document Number: 93185 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 GT100DA60U Vishay Semiconductors ORDERING INFORMATION TABLE Device code Insulated Gate Bipolar Transistor (Trench IGBT), 100 A G 1 1 2 3 4 5 6 7 - T 2 100 3 D 4 A 5 60 6 U 7 Insulated Gate Bipolar Transistor (IGBT) T = Trench IGBT technology Current rating (100 = 100 A) Circuit configuration (D = Single switch with antiparallel diode) Package indicator (A = SOT-227) Voltage rating (60 = 600 V) Speed/type (U = Ultrafast) CIRCUIT CONFIGURATION 3 (C) 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93185 Revision: 22-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45° 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005) 12.30 (0.484) 11.80 (0.464) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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