GB100DA60UP

GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A FEATURES • NPT warp 2 speed IGBT technology with positive temperature coefficient • Square RBSOA • HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC PRODUCT SUMMARY VCES IC DC VCE(on) typical at 100 A, 25 °C IF DC 600 V 100 A at 61 °C 2.4 V 100 A at 85 °C BENEFITS • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting to heatsink • Plug-in compatible with other SOT-227 packages • Higher switching frequency up to 150 kHz • Lower conduction losses and switching losses • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current Clamped inductive load current Diode continuous forward current Peak diode forward current Gate to emitter voltage Power dissipation, IGBT SYMBOL VCES IC ICM ILM IF IFM VGE PD TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C Any terminal to case, t = 1 min TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 600 125 85 300 300 160 105 200 ± 20 447 250 W 313 175 2500 V V A UNITS V Power dissipation, diode Isolation voltage PD VISOL Document Number: 93001 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 GB100DA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES TEST CONDITIONS VGE = 0 V, IC = 250 μA VGE = 15 V, IC = 100 A VGE = 15 V, IC = 100 A, TJ = 125 °C VCE = VGE, IC = 250 μA VCE = VGE, IC = 1 mA (25 °C to 125 °C) VGE = 0 V, VCE = 600 V VGE = 0 V, VCE = 600 V, TJ = 150 °C IC = 100 A, VGE = 0 V IC = 100 A, VGE = 0 V, TJ = 125 °C VGE = ± 20 V MIN. 600 3 TYP. 2.4 3 3.9 - 10 7 4 1.6 1.7 MAX. 2.8 3.4 5 100 10 2.1 V 2 ± 200 nA mV/°C μA mA V UNITS Forward voltage drop Gate to emitter leakage current VFM IGES SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Total gate charge (turn-on) Gate to emitter charge (turn-on) Gate to collector charge (turn-on) Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area Diode reverse recovery time Diode peak reverse current Diode recovery charge Diode reverse recovery time Diode peak reverse current Diode recovery charge SYMBOL Qg Qge Qgc Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf TJ = 150 °C, IC = 300 A, Rg = 22  RBSOA trr Irr Qrr trr Irr Qrr IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V VGE = 15 V to 0 V, VCC = 400 V, VP = 600 V, L = 500 μH 95 10 480 144 16 1136 120 13 780 185 19 1758 ns A nC ns A nC Fullsquare IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 125 °C IC = 100 A, VCC = 360 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C Energy losses include tail and diode recovery (see fig. 18) IC = 100 A, VCC = 480 V, VGE = 15 V TEST CONDITIONS MIN. TYP. 460 160 70 0.36 1.42 1.78 0.52 1.6 2.12 264 54 257 80 MAX. 690 250 130 mJ ns nC UNITS www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93001 Revision: 22-Jul-10 GB100DA60UP Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range IGBT Junction to case Diode Case to sink per module Mounting torque, 6-32 or M3 screw Weight RthJC RthCS SYMBOL TJ, TStg MIN. - 40 TYP. 0.05 30 MAX. 150 0.28 0.4 1.3 Nm g °C/W UNITS °C Vishay Semiconductors 160 200 Allowable case temperature (°C) 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 0 0 1 2 3 4 5 50 150 Tj = 25°C IC (A) 100 Tj = 125°C Continuous collector current, IC (A) VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature 1000 Fig. 3 - Typical IGBT Collector Current Characteristics 160 Allowable case temperature (°C) 140 120 100 80 60 40 20 0 100 IC (A) 10 1 0 1 10 VCE (V) 100 1000 0 20 40 60 80 100 120 140 160 180 Continuous forward current, IF (A) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Fig. 4 - Maximum DC Forward Current vs. Case Temperature Document Number: 93001 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 GB100DA60UP Vishay Semiconductors 200 Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A 4 3.5 150 3 2.5 100 A 75 A VCE (V) IF (A) 100 2 27 A 1.5 50 Tj = 125°C Tj = 25°C 1 0.5 0 0 0 0.5 1 1.5 2 2.5 20 40 60 80 100 120 140 160 VFM (V) TJ (°C) Fig. 5 - Typical Diode Forward Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 1.8 10 TJ = 125°C 1.6 1.4 1.2 EOFF 1 ICES (mA) 0.1 Energy (mJ) 1 0.8 0.6 0.4 0.2 EON 0.01 TJ = 25°C 0.001 0.0001 100 200 300 400 500 600 0 10 30 50 70 90 110 VCES (V) IC (A) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V 1000 4.5 TJ = 25°C 4 tdOFF Switching time (μs) Vgeth (V) 3.5 tdON tF 100 3 TJ = 125°C 2.5 tR 2 0.0002 10 0.0004 0.0006 0.0008 0.001 0 20 40 60 80 100 120 IC (mA) IC (A) Fig. 7 - Typical IGBT Threshold Voltage Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 360 V, Rg = 5 , VGE = 15 V www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93001 Revision: 22-Jul-10 GB100DA60UP Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0 Vishay Semiconductors 210 190 170 EOFF Energy (mJ) 150 trr (ns) TJ = 125°C 130 110 90 70 50 TJ = 25°C EON 10 20 30 40 50 100 1000 RG (Ω ) dIF/dt (A/μs) Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 100 A, L = 500 μH, VCC = 360 V, VGE = 15 V 1000 Fig. 13 - Typical trr diode vs. dIF/dt VRR = 200 V, IF = 50 A 40 tdON tdOFF 35 30 25 Switching time (μs) Irr (A) tF 100 20 15 TJ = 125°C TJ = 25°C tR 10 5 10 0 10 20 30 40 50 0 100 1000 RG (Ω ) dIF/dt (A/μs) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 360 V, IC = 100 A, VGE = 15 V ZthJC - Thermal impedance junction to case (°C/W ) 1 Fig. 14 - Typical Irr diode vs. dIF/dt VRR = 200 V, IF = 50 A D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.0001 1E-005 0.0001 0.001 0.01 0.1 1 Rectangular pulse duration (t1) Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Document Number: 93001 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 GB100DA60UP Vishay Semiconductors ZthJC - Thermal impedance junction to case (°C/W ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( THERMAL RESPONSE ) Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A 0.001 1E-005 0.0001 0.001 0.01 0.1 1 Rectangular pulse duration (t1) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (diode) R= L VC * 50 V 1000 V 1 2 VCC D.U.T. ICM D.U.T. Rg + -V CC * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 17a - Clamped Inductive Load Test Circuit Fig. 17b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L -+ -5V D.U.T./ driver Rg + VCC Fig. 18a - Switching Loss Test Circuit www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93001 Revision: 22-Jul-10 GB100DA60UP Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A Vishay Semiconductors 1 2 90 % 3 VC 90 % 10 % td(off) 10 % IC 5% tr td(on) Eon Ets = (Eon + Eoff) Eoff tf t = 5 µs Fig. 18b - Switching Loss Waveforms Test Circuit ORDERING INFORMATION TABLE Device code G 1 1 2 3 4 5 6 7 8 - B 2 100 3 D 4 A 5 60 6 U 7 P 8 Insulated Gate Bipolar Transistor (IGBT) B = IGBT Generation 5 Current rating (100 = 100 A) Circuit configuration (D = Single switch with antiparallel diode) Package indicator (A = SOT-227) Voltage rating (60 = 600 V) Speed/type (U = Ultrafast IGBT) Totally lead (Pb)-free Document Number: 93001 Revision: 22-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 7 GB100DA60UP Vishay Semiconductors CIRCUIT CONFIGURATION 3 (C) Insulated Gate Bipolar Transistor (Warp 2 Speed IGBT), 100 A 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions Packaging information www.vishay.com/doc?95036 www.vishay.com/doc?95037 www.vishay.com 8 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93001 Revision: 22-Jul-10 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Ø 4.40 (0.173) Ø 4.20 (0.165) 4 4 x M4 nuts -A3 6.25 (0.246) 12.50 (0.492) 1 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 2 R full 25.70 (1.012) 25.20 (0.992) -BChamfer 2.00 (0.079) x 45° 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C0.12 (0.005) 12.30 (0.484) 11.80 (0.464) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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