VS-GB75DA120UP

Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor (Ultrafast IGBT), 75 A FEATURES • NPT Generation V IGBT technology • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Fully isolated package SOT-227 • Speed 8 kHz to 60 kHz • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY BENEFITS VCES 1200 V IC DC 75 A at 95 °C VCE(on) typical at 75 A, 25 °C 3.3 V Package SOT-227 • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 131 TC = 80 °C 89 Pulsed collector current ICM 200 Clamped inductive load current ILM 200 Diode continuous forward current IF Gate to emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode Isolation voltage Revision: 30-Jul-13 PD VISOL A TC = 25 °C TC = 80 °C 59 39 ± 20 TC = 25 °C 658 TC = 80 °C 369 TC = 25 °C 240 TC = 80 °C 135 Any terminal to case, t = 1 min 2500 V W V Document Number: 93011 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage Collector to emitter voltage Gate threshold voltage Temperature coefficient of threshold voltage Collector to emitter leakage current Forward voltage drop Gate to emitter leakage current SYMBOL VBR(CES) VCE(on) VGE(th) VGE(th)/TJ ICES VFM IGES TEST CONDITIONS MIN. TYP. MAX. UNITS VGE = 0 V, IC = 250 μA 1200 - - VGE = 15 V, IC = 75 A - 3.3 3.8 VGE = 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9 VCE = VGE, IC = 250 μA 4 5 6 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C VGE = 0 V, VCE = 1200 V - 3 250 μA VGE = 0 V, VCE = 1200 V, TJ = 150 °C - 4 20 mA IC = 75 A, VGE = 0 V - 3.4 5.0 IC = 75 A, VGE = 0 V, TJ = 125 °C - 3.3 5.2 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 690 - - 65 - - 250 - - 1.53 - - 1.76 - - 3.29 - - 2.49 - - 3.45 - - 5.94 - - 281 - - 45 - - 300 - - 126 - V V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr TEST CONDITIONS IC = 50 A, VCC = 600 V, VGE = 15 V IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5  L = 500 μH, TJ = 25 °C nC mJ IC = 75 A, VCC = 600 V, VGE = 15 V, Rg = 5   L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery (see fig. 18) ns td(off) tf TJ = 150 °C, IC = 200 A, Rg = 22  Reverse bias safe operating area RBSOA Fullsquare VGE = 15 V to 0 V, VCC = 900 V, VP = 1200 V, L = 500 μH Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Revision: 30-Jul-13 IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs,  VR = 200 V, TJ = 125 °C - 142 210 ns - 13 16 A - 923 1680 nC - 202 260 ns - 18 22 A - 1818 2860 nC Document Number: 93011 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction and storage temperature range SYMBOL MIN. TYP. MAX. UNITS TJ, TStg - 40 - 150 °C - - 0.19 IGBT Junction to case RthJC Diode - - 0.52 - 0.05 - Weight - 30 - g Mounting torque - - 1.3 Nm Case to heatsink RthCS Flat, greased surface SOT-227 200 160 140 120 150 TJ = 25 °C 100 IC (A) Allowable Case Temperature (°C) Case style °C/W 80 100 60 TJ = 125 °C 40 50 20 0 0 0 20 40 60 80 100 120 140 0 1 2 3 4 5 6 IC - Continuous Collector Current (A) VCE (V) Fig. 1 - Maximum DC IGBT Collector Current vs. Case Temperature Fig. 3 - Typical IGBT Collector Current Characteristics Allowable Case Temperature (°C) 1000 IC (A) 100 10 1 160 140 120 100 80 60 40 20 0 10 Revision: 30-Jul-13 100 1000 10 000 0 10 20 30 40 50 60 70 VCE (V) IF - Continuous Forward Current (A) Fig. 2 - IGBT Reverse Bias SOA TJ = 150 °C, VGE = 15 V Fig. 4 - Maximum DC Forward Current vs. Case Temperature Document Number: 93011 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors 200 4.5 100 A 4.0 150 VCE (V) IF (A) 75 A 100 3.5 3.0 TJ = 125 °C 50 27 A 2.5 TJ = 25 °C 0 2.0 0 1 2 3 4 5 25 50 75 100 125 150 VFM (V) TJ (°C) Fig. 5 - Typical Diode Forward Characteristics Fig. 8 - Typical IGBT Collector to Emitter Voltage vs. Junction Temperature, VGE = 15 V 4.0 10 3.5 TJ = 125 °C 1 Energy (mJ) ICES (mA) 3.0 0.1 0.01 Eoff 2.0 1.5 Eon 1.0 TJ = 25 °C 0.001 2.5 0.5 0.0001 0 0 200 400 600 800 1000 1200 10 30 40 50 60 70 IC (A) Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 9 - Typical IGBT Energy Loss vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V 6.0 80 1000 5.5 Switching Time (µs) TJ = 25 °C 5.0 Vgeth (V) 20 VCES (V) 4.5 TJ = 125 °C 4.0 td(off) td(on) tf 100 tr 3.5 3.0 0.0002 10 0.0004 0.0006 0.0008 0.001 0 20 40 60 80 IC (mA) IC (A) Fig. 7 - Typical IGBT Threshold Voltage Fig. 10 - Typical IGBT Switching Time vs. IC TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V Revision: 30-Jul-13 Document Number: 93011 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors 14 250 230 12 Eon 190 8 trr (ns) Energy (mJ) TJ = 125 °C 210 10 Eoff 6 170 TJ = 25 °C 150 130 4 110 2 90 0 0 10 20 30 40 70 100 50 RG (Ω) 1000 dIF/dt (A/µs) Fig. 13 - Typical trr diode vs. dIF/dt VRR = 200 V, IF = 50 A Fig. 11 - Typical IGBT Energy Loss vs. Rg TJ = 125 °C, IC = 75 A, L = 500 μH, VCC = 600 V, VGE = 15 V 10 000 40 30 td(on) 1000 TJ = 125 °C 25 td(off) Irr (A) Switching Time (µs) 35 tf 20 TJ = 25 °C 15 100 tr 10 5 10 0 10 20 30 40 0 100 50 RG (Ω) 1000 dIF/dt (A/µs) Fig. 12 - Typical IGBT Switching Time vs. Rg TJ = 125 °C, L = 500 μH, VCC = 600 V, Rg = 5 , VGE = 15 V Fig. 14 - Typical Irr diode vs. dIF/dt VRR = 200 V, IF = 50 A ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.01 0.001 0.0001 0.00001 Single pulse (thermal response) 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1 1 Rectangular Pulse Duration (t1) Fig. 15 - Maximum Thermal Impedance ZthJC Characteristics (IGBT) Revision: 30-Jul-13 Document Number: 93011 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 Single pulse (thermal response) 0.001 0.00001 0.0001 0.001 0.01 0.1 1 Rectangular Pulse Duration (t1) Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (diode) R= L D.U.T. VCC ICM VC * 50 V 1000 V D.U.T. 1 2 + -V CC Rg * Driver same type as D.U.T.; VC = 80 % of Vce(max) * Note: Due to the 50 V power supply, pulse width and inductor will increase to obtain Id Fig. 17a - Clamped Inductive Load Test Circuit Fig. 17b - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + -5V D.U.T./ driver + VCC Rg Fig. 18a - Switching Loss Test Circuit Revision: 30-Jul-13 Document Number: 93011 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Not Available for New Designs, Use VS-GB90DA120U VS-GB75DA120UP www.vishay.com Vishay Semiconductors 1 2 90 % 10 % 3 VC 90 % td(off) 10 % 5% IC tf tr td(on) t = 5 µs Eoff Eon Ets = (Eon + Eoff) Fig. 18b - Switching Loss Waveforms Test Circuit ORDERING INFORMATION TABLE Device code VS- G B 75 D A 120 U P 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated Gate Bipolar Transistor (IGBT) 3 - B = IGBT Generation 5 4 - Current rating (75 = 75 A) 5 - Circuit configuration (D = Single switch with antiparallel diode) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = Ultrafast IGBT) 9 - Totally lead (Pb)-free CIRCUIT CONFIGURATION 3 (C) 2 (G) 1, 4 (E) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95036 Packaging information www.vishay.com/doc?95037 Revision: 30-Jul-13 Document Number: 93011 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors SOT-227 DIMENSIONS in millimeters (inches) 38.30 (1.508) 37.80 (1.488) Chamfer 2.00 (0.079) x 45° 4 x M4 nuts Ø 4.40 (0.173) Ø 4.20 (0.165) -A3 4 6.25 (0.246) 12.50 (0.492) 25.70 (1.012) 25.20 (0.992) -B- 1 2 R full 7.50 (0.295) 15.00 (0.590) 30.20 (1.189) 29.80 (1.173) 8.10 (0.319) 4x 7.70 (0.303) 2.10 (0.082) 1.90 (0.075) 0.25 (0.010) M C A M B M 2.10 (0.082) 1.90 (0.075) -C- 12.30 (0.484) 11.80 (0.464) 0.12 (0.005) Notes • Dimensioning and tolerancing per ANSI Y14.5M-1982 • Controlling dimension: millimeter Document Number: 95036 Revision: 28-Aug-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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