VS-GT50YF120NT

VS-GT55LA120UX www.vishay.com Vishay Semiconductors “Low Side Chopper” IGBT SOT-227 (Trench IGBT), 47 A FEATURES • Trench IGBT technology • Square RBSOA • HEXFRED® clamping diode • Positive VCE(on) temperature coefficient • Fully isolated package • Speed 8 kHz to 60 kHz • Very low internal inductance (≤ 5 nH typical) SOT-227 • Industry standard outline • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VCES 1200 V BENEFITS IC DC 50 A at 73 °C VCE(on) typical at 50 A, 25 °C 2.39 V Package SOT-227 Circuit configuration Low side chopper • Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating • Easy to assemble and parallel • Direct mounting on heatsink • Plug-in compatible with other SOT-227 packages • Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC Pulsed collector current ICM Clamped inductive load current ILM Diode continuous forward current IF Single pulse forward current IFSM Gate to emitter voltage VGE Power dissipation, IGBT PD Power dissipation, diode RMS isolation voltage PD VISOL TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 68 TC = 80 °C 47 TJ = 150 °C, Tp = 6 ms, VGE = 15 V 150 250 TC = 25 °C A 87 TC = 80 °C 59 10 ms sine or 6 ms rectangular pulse, TJ = 25 °C 310 ± 20 TC = 25 °C 291 TC = 80 °C 163 TC = 25 °C 338 TC = 80 °C 190 Any terminal to case, t = 1 min 2500 V W V Revision: 26-Jul-2021 Document Number: 96778 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT55LA120UX www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) Collector to emitter voltage VCE(on) Gate threshold voltage VGE(th) TEST CONDITIONS VGE = 0 V, IC = 2 mA VGE(th)/ΔTJ Collector to emitter leakage current ICES Diode reverse breakdown voltage VBR Diode forward voltage drop VFM Diode reverse leakage current IRM Gate to emitter leakage current IGES TYP. MAX. 1200 - - VGE = 15 V, IC = 25 A - 1.95 - VGE = 15 V, IC = 50 A - 2.39 2.8 VGE = 15 V, IC = 25 A, TJ = 125 °C - 2.13 - VGE = 15 V, IC = 50 A, TJ = 125 °C Temperature coefficient of threshold voltage MIN. VCE = VGE, IC = 2 mA VCE = VGE, IC = 2 mA (25 °C to 125 °C) - 2.76 - 4.6 5.8 7.6 - -13 - VGE = 0 V, VCE = 1200 V - 1.7 50 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 26.2 - IR = 1 mA 1200 - - IF = 25 A, VGE = 0 V - 2.11 2.42 IF = 50 A, VGE = 0 V - 2.72 - IF = 25 A, VGE = 0 V, TJ = 125 °C - 2.04 - UNITS V mV/°C μA V V IF = 50 A, VGE = 0 V, TJ = 125 °C - 2.83 - VR = 1200 V - 4 50 μA TJ = 125 °C, VR = 1200 V - 0.8 - mA VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 171 - - 22 - - 86 - - 2.7 - - 1.4 - - 4.1 - - 4.1 - - 2.3 - - 6.4 - - 8 - - 11 - - 81 - - 179 - SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Total gate charge (turn-on) Qg Gate to emitter charge (turn-on) Qge Gate to collector charge (turn-on) Qgc Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time Reverse bias safe operating area tr TEST CONDITIONS IC = 40 A, VCC = 960 V, VGE = 15 V IC = 50 A, VCC = 600 V, VGE = 15 V, Rg = 4.7 Ω, L = 500 μH, TJ = 25 °C IC = 50 A, VCC = 600 V, VGE = 15 V, Rg = 4.7 Ω, L = 500 μH, TJ = 125 °C Energy losses include tail and diode recovery td(off) tf RBSOA Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr Diode reverse recovery time trr Diode peak reverse current Irr Diode recovery charge Qrr TJ = 150 °C, IC = 250 A, Rg = 4.7 Ω, VGE = 15 V to 0 V, VCC = 700 V, VP = 1200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V, TJ = 125 °C nC mJ ns Fullsquare - 129 - - 11 - ns A - 710 - nC ns - 208 - - 17 - A - 1768 - nC Revision: 26-Jul-2021 Document Number: 96778 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT55LA120UX www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range IGBT Junction to case TEST CONDITIONS MIN. TYP. MAX. UNITS -40 - 150 °C - - 0.43 - - 0.37 - 0.05 - - 30 - g - - 1.1 (9.7) Nm (lbf.in) - - 1.8 (15.9) Nm (lbf.in) TJ, TStg RthJC Diode Case to heatsink RthCS Flat, greased surface Weight Torque to terminal Mounting torque Torque to heatsink Case style SOT-227 150 Allowable Case Temperature (°C) 180 120 TJ = 125 °C 90 IC (A) °C/W 60 TJ = 150 °C TJ = 25 °C 30 0 0 1.0 2.0 3.0 4.0 5.0 6.0 160 140 120 DC 100 80 60 40 20 0 7.0 0 10 20 30 40 50 60 70 80 VCE (V) IC - Continuous Collector Current (A) Fig. 1 - Typical Trench IGBT Output Characteristics, VGE = 15 V Fig. 3 - Maximum Trench IGBT Continuous Collector Current vs. Case Temperature 60 140 VCE = 20 V VGE = 12 V VGE = 15 V VGE = 18 V 120 40 80 IC (A) IC (A) 100 50 60 30 TJ = 125 °C 20 40 20 10 VGE = 9 V 0 0 1.0 2.0 3.0 4.0 5.0 6.0 VCE (V) Fig. 2 - Typical Trench IGBT Output Characteristics, TJ = 125 °C TJ = 25 °C 0 5 6 7 8 9 10 VGE (V) Fig. 4 - Typical Trench IGBT Transfer Characteristic Revision: 26-Jul-2021 Document Number: 96778 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT55LA120UX www.vishay.com Vishay Semiconductors 6.0 1000 tf 5.5 Switching Time (ns) TJ = 25 °C VGEth (V) 5.0 4.5 4.0 TJ = 125 °C 3.5 3.0 0 0.5 1 1.5 100 td(off) tr 10 td(on) 1 2 0 10 20 30 IC (mA) 40 50 60 70 80 IC (A) Fig. 5 - Typical Trench IGBT Gate Threshold Voltage Fig. 8 - Typical Trench IGBT Switching Time vs. IC TJ = 125 °C, VCC = 600 V, Rg = 4.7 Ω, VGE = +15 V/-15 V, L = 500 μH 10 10 TJ = 150 °C 1 8 0.1 Energy (mJ) ICES (mA) Eon TJ = 125 °C 0.01 TJ = 25 °C 0.001 400 600 4 Eoff 2 0.0001 200 6 800 1000 0 1200 0 10 20 VCES (V) Fig. 6 - Typical Trench IGBT Zero Gate Voltage Collector Current 40 50 Fig. 9 - Typical Trench IGBT Energy Losses vs. Rg TJ = 125 °C, VCC = 600 V, IC = 50 A, VGE = +15 V/-15 V, L = 500 μH 1000 7 6 tf Switching Time (ns) Eon 5 Energy (mJ) 30 Rg (:) 4 Eoff 3 2 100 td(off) tr 10 td(on) 1 1 0 0 10 20 30 40 50 60 70 80 IC (A) Fig. 7 - Typical Trench IGBT Energy Loss vs. IC TJ = 125 °C, VCC = 600 V, Rg = 4.7 Ω, VGE = +15 V/-15 V, L = 500 μH 0 5 10 15 20 25 30 35 40 45 50 Rg (Ω) Fig. 10 - Typical Trench IGBT Switching Time vs. Rg TJ = 125 °C, VCC = 600 V, IC = 50 A, VGE = +15 V/-15 V, L = 500 μH Revision: 26-Jul-2021 Document Number: 96778 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT55LA120UX www.vishay.com Vishay Semiconductors 18 270 16 250 230 210 12 trr (ns) VGE (V) 14 10 8 6 190 TJ = 125 °C 170 150 130 4 2 90 70 0 0 50 100 150 TJ = 25 °C 110 TJ = 25 °C VCE = 960 V IC = 40 A 200 100 QG (nC) Fig. 14 - Typical Diode Reverse Recovery Time vs. dIF/dt Fig. 11 - Typical Trench IGBT Gate Charge vs. Gate to Emitter Voltage 200 40 175 35 150 30 Allowable Case Temperature (°C) Irr (A) TJ = 25 °C 75 20 15 50 10 25 5 0 0 1.0 2.0 3.0 4.0 5.0 6.0 0 7.0 TJ = 25 °C 100 1000 VFM (V) dIF/dt (A/µs) Fig. 12 - Typical Diode Forward Characteristic Fig. 15 - Typical Diode Reverse Recovery Current vs. dIF/dt 160 2650 140 2400 120 2150 100 1900 DC 80 60 TJ = 125 °C 1650 1400 1150 40 900 20 0 TJ = 125 °C 25 TJ = 125 °C Qrr (nC) IF (A) 125 100 1000 dIF/dt (A/µs) TJ = 25 °C 650 0 20 40 60 80 100 400 100 1000 IF - Continuous Forward Current (A) dIF/dt (A/µs) Fig. 13 - Maximum Diode Continuous Forward Current vs. Case Temperature Fig. 16 - Typical Diode Reverse Recovery Charge vs. dIF/dt Revision: 26-Jul-2021 Document Number: 96778 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT55LA120UX www.vishay.com Vishay Semiconductors 1000 ICE - Collector-Emitter Current (A) 1000 IC (A) 100 10 1 0.1 10 100 1000 10000 TA = 25 °C TJ = 150 °C Single pulse tp = 100 µs tp = 500 µs tp = 1 ms 100 tp = 6 ms 10 BVCES limited 1 0.1 1 10 100 1000 VCE (V) VCE - Collector-Emitter Voltage (V) Fig. 17 - Trench IGBT Reverse BIAS SOA TJ = 150 °C, IC = 250 A, Rg = 4.7 Ω, VGE = +15 V/0 V, VCC = 700 V, Vp = 1200 V Fig. 18 - Trench IGBT Safe Operating Area ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Trench IGBT Thermal Impedance ZthJC Characteristics ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 20 - Maximum Diode Thermal Impedance ZthJC Characteristics Revision: 26-Jul-2021 Document Number: 96778 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT55LA120UX www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 55 L A 120 U X 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - T = trench IGBT 4 - Current rating (55 = 55 A) 5 - Circuit configuration (L = low side chopper) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (U = ultrafast IGBT) 9 - Diode (X = HEXFRED® diode) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 1 Low side chopper Lead Assignment 4 3 1 2 4 L 3 2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 26-Jul-2021 Document Number: 96778 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) Ø 4.10 (0.161) Ø 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note • Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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