GB50YF120N

GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design ECONO2 4PACK RoHS COMPLIANT • Speed 8 to 60 kHz • Designed and qualified for industrial market BENEFITS PRODUCT SUMMARY VCES IC at TC = 66 °C VCE(on) (typical) 1200 V 50 A 3.49 V • Benchmark efficiency for SMPS appreciation in particular HF welding • Rugged transient performance • Low EMI, requires less snubbing • Direct mounting to heatsink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current See fig. C.T.5 Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage Maximum power dissipation (IGBT) Maximum operating junction temperature Storage temperature range Isolation voltage SYMBOL VCES IC ICM ILM IF IFM VGE PD TJ TStg VISOL TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 1200 66 44 150 150 40 25 150 ± 20 330 180 150 - 40 to + 125 AC 2500 (MIN) V W A UNITS V °C V Document Number: 93653 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL BV(CES) TEST CONDITIONS VGE = 0 V, IC = 500 µA IC = 50 A, VGE = 15 V Collector to emitter voltage VCE(ON) IC = 75 A, VGE = 15 V IC = 50 A, VGE = 15 V, TJ = 125 °C IC = 75 A, VGE = 15 V, TJ = 125 °C Gate threshold voltage Threshold voltage temperature coefficient Zero gate voltage collector current VGE(th) ΔVGE(th)/ΔTJ ICES VCE = VGE, IC = 250 µA VCE = VGE, IC = 1 mA (25 °C to 125 °C) VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 125 °C IF = 5 0 A Diode forward voltage drop VFM IF = 7 5 A IF = 50 A, TJ = 125 °C IF = 75 A, TJ = 125 °C Gate to emitter leakage current IGES VGE = ± 20 V MIN. 1200 4.0 TYP. 3.49 4.15 4.16 4.97 4.9 - 10 11 600 3.30 3.90 3.6 4.37 MAX. 3.9 4.5 4.5 5.4 6.0 250 1000 4.5 5.0 4.8 5.5 ± 200 nA V mV/°C µA V UNITS SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER Total gate charge (turn-on) Gate to emitter charge (turn-on) Gate to collector charge (turn-on) Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area SYMBOL QG QGE QGC Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf RBSOA TJ = 150 °C, IC = 150 A RG = 10 Ω, VGE = 15 V to 0 V TJ = 150 °C VCC = 900 V, VP = 1200 V RG = 10 Ω, VGE = 15 V to 0 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VCC = 600 V IF = 5 0 A dI/dt = 7 A/µs 10 IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 Ω, L = 500 µH TJ = 125 °C TEST CONDITIONS IC = 5 0 A VCC = 600 V VGE = 15 V IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 Ω, L = 500 µH TJ = 25 °C (1) IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 Ω, L = 500 µH TJ = 125 °C (1) MIN. TYP. 400 43 187 0.93 1.20 2.13 1.68 1.77 3.46 128 56 292 134 Fullsquare MAX. ns mJ nC UNITS Short circuit safe operating area SCSOA 1.3 2.0 0.453 0.74 0.12 0.4 2.3 3 0.49 0.82 0.3 1.5 µs Diode peak reverse recovery current Irr trr A Diode reverse recovery time µs Total reverse recovery charge Qrr µC Note (1) Energy losses include “tail” and diode reverse recovery www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93653 Revision: 01-Sep-08 GB50YF120N IGBT Fourpack Module, 50 A Vishay High Power Products THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case IGBT Junction to case DIODE Case to sink, flat, greased surface Mounting torque (M5) Weight SYMBOL RthJC (IGBT) RthJC (DIODE) RthCS (MODULE) MIN. 2.7 TYP. 0.05 170 MAX. 0.38 1.00 3.3 Nm g °C/W UNITS 160 140 1000 100 120 100 IC (A) 10 80 60 40 IC (A) 1 0.1 0 10 20 30 40 50 60 70 20 0 0.01 1 10 100 1000 10000 TC (°C) VCE (V) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 350 300 250 100 1000 Fig. 3 - Forward SOA TC = 25 °C; TJ ≤ 150 °C PD (W) 150 100 50 0 0 20 40 60 80 100 120 140 160 PD (W) 10 1 10 100 1000 10000 200 TC (°C) TC (°C) Fig. 2 - Power Dissipation vs. Case Temperature Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V Document Number: 93653 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A 160 140 120 100 80 60 40 4 20 18 16 14 ICE = 75A ICE = 50A ICE = 25A VGE = 18V VGE = 15V VGE = 12V VGE = 9V VCE (V) ICE (A) 12 10 8 6 20 0 0 1 2 3 4 5 6 7 2 0 7 9 11 13 15 17 19 VCE (V) VGE (V) Fig. 5 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 500 µs 160 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 20 18 16 14 Fig. 8 - Typical VCE vs. VGE TJ = 25 °C ICE = 75A ICE = 50A ICE = 25A ICE (A) 80 60 40 20 0 0 1 2 3 4 5 6 7 8 VCE (V) 12 10 8 6 4 2 0 7 9 11 13 15 17 19 VCE (V) VGE (V) Fig. 6 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 500 µs 160 140 120 100 25°C 125°C Fig. 9 - Typical VCE vs. VGE TJ = 125 °C 300 250 200 TJ = 25°C TJ = 125°C ICE (A) IF (A) 80 60 40 150 100 50 20 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 4 6 8 10 12 14 VF (V) VGE (V) Fig. 7 - Typical Diode Forward Characteristics tp = 500 µs Fig. 10 - Typical Transfer Characteristics VCE = 20 V; tp = 500 µs www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93653 Revision: 01-Sep-08 GB50YF120N IGBT Fourpack Module, 50 A Vishay High Power Products 1 1 TJ = 125°C 0.1 tdOFF Switching Time (µs) ICES (mA) tF 0.1 tdON 0.01 tR TJ = 25°C 0.001 400 600 800 1000 1200 0.01 0 20 40 60 80 100 VCES (V) IC (A) Fig. 11 - Typical Zero Gate Voltage Collector Current Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 200 µH; VCE = 600 V, RG = 5 Ω; VGE = 15 V 12 5.5 5 4.5 TJ = 25°C 10 8 125°C Vgeth (V) 4 3.5 3 2.5 2 0 0.2 0.4 0.6 0.8 1 IRR (A) TJ = 125°C 6 4 25°C 2 0 0 20 40 60 80 100 IC (mA) dIF/ dt (A/µs) Fig. 12 - Typical Threshold Voltage Fig. 15 - Typical Diode IREC vs. dIF/dt VCC = 600 V; IF = 50 A 800 700 4.5 4 3.5 EON 600 Energy (mJ) tRR (ns) 3 2.5 2 1.5 1 0.5 0 20 40 60 80 100 500 125°C 400 300 200 EOFF 25°C 100 0 0 20 40 60 80 100 IC (A) dIF/ dt (A/µs) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 200 µH; VCE = 600 V, RG= 5 Ω; VGE = 15 V Fig. 16 - Typical Diode trr vs. dIF/dt VCC = 600 V; IF = 50 A Document Number: 93653 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A 16 125°C 1600 1400 1200 14 12 10 typical value QRR (nC) 1000 VGE (V) 25°C 0 20 40 60 80 100 800 600 400 200 0 8 6 4 2 0 0 100 200 300 400 500 dIF/ dt (A/µs) QG, Total Gate Charge (nC) Fig. 17 - Typical Diode Qrr vs. dIF/dt VCC = 600 V; IF = 50 A 1 Fig. 18 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 µH D = 0.50 Thermal Response (ZthJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 0.0001 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) 10 D = 0.50 0.20 Thermal Response (ZthJC ) 1 0.10 0.1 SINGLE PULSE ( THERMAL RESPONSE ) 0.01 0.05 0.02 0.01 0.001 1E-006 1E-005 0.0001 0.001 t1, Rectangular Pulse Duration (sec) Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE) www.vishay.com 6 For technical questions, contact: ind-modules@vishay.com Document Number: 93653 Revision: 01-Sep-08 GB50YF120N IGBT Fourpack Module, 50 A Vishay High Power Products Driver L D.U.T. 0 + VCC D+ CD.U.T. 900 V 1K Fig. C.T.1 - Gate Charge Circuit (Turn-Off) Fig. C.T.3 - S.C. SOA Circuit L Diode clamp/ D.U.T. L + - 80 V + Rg D.U.T. 1000 V -5V D.U.T./ Driver Rg + VCC Fig. C.T.2 - RBSOA Circuit Fig. C.T.4 - Switching Loss Circuit R= VCC ICM D.U.T. Rg + VCC Fig. C.T.5 - Resistive Load Circuit Document Number: 93653 Revision: 01-Sep-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 7 GB50YF120N Vishay High Power Products IGBT Fourpack Module, 50 A ORDERING INFORMATION TABLE Device code G 1 1 2 3 4 5 6 7 - B 2 50 3 Y 4 F 5 120 6 N 7 Insulated gate bipolar transistor (IGBT) B = IGBT Generation 5 NPT Current rating (50 = 50 A) Circuit configuration (Y = Fourpack) Package indicator (F = ECONO2) Voltage rating (120 = 1200 V) Speed/type (N = Ultrafast with reduced diode, speed 8 to 60 kHz) CIRCUIT CONFIGURATION 48, 49 21, 22 40 41 28 29 15, 16, 17 5, 6, 7 36 37 32 33 46, 47 23, 24 LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95252 www.vishay.com 8 For technical questions, contact: ind-modules@vishay.com Document Number: 93653 Revision: 01-Sep-08 Outline Dimensions Vishay Semiconductors ECONO2 4PAK DIMENSIONS in millimeters (inches) ZY 20.5 + 1.0 - 0.5 13.2 ± 0.15 0.8 105 ± 0.1 1.25 - 0.02 - 0.06 X 2:1 0.8 ± 0.03 34.29 30.48 34.29 30.48 26.67 22.86 22.86 19.05 19.05 11.43 11.43 7.62 7.62 3.81 4443 47 46 4140 38 373635 33 32 30 29282726 21 ± 0.03 23 24 11.43 11.43 45.4 ± 0.2 42 ± 0.15 5.5 ± 0.05 2 45678 10 12 15 16 17 19 7.62 7.62 11.43 15.24 19.05 22.86 30.48 39.49 19.05 22.86 26.67 34.29 39.49 7.5 0 -03 93 ± 0.15 107.8 ± 0.2 Detail R3 Z 2:1 1 0.5 21 ± 0.03 49 48 21 22 Y 2:1 0.85 10.5 0.6 0.8 ± 0.03 1.25 - 0.02 - 0.06 83 0 - 0.2 Document Number: 95252 Revision: 29-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 7.62 7.62 10.5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1