GB75YF120UT

GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design ECONO2 4PACK • Speed 8 kHz to 60 kHz • Compliant to RoHS directive 2002/95/EC BENEFITS PRODUCT SUMMARY VCES IC at TC = 67 °C VCE(on) (typical) 1200 V 75 A 3.4 V • Benchmark efficiency for SMPS appreciation in particular HF welding • Rugged transient performance • Low EMI, requires less snubbing • Direct mounting to heatsink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current Pulsed collector current See fig. C.T.5 Clamped inductive load current Diode continuous forward current Diode maximum forward current Gate to emitter voltage Maximum power dissipation (IGBT) Maximum operating junction temperature Storage temperature range Isolation voltage SYMBOL VCES IC ICM ILM IF IFM VGE PD TJ TStg VISOL TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TC = 25 °C TC = 80 °C TEST CONDITIONS MAX. 1200 100 67 200 200 60 40 150 ± 20 480 270 150 - 40 to + 125 AC 2500 (MIN) V W A UNITS V °C V Document Number: 93172 Revision: 13-Jan-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) TEST CONDITIONS VGE = 0 V, IC = 500 μA IC = 75 A, VGE = 15 V Collector to emitter voltage VCE(ON) IC = 100 A, VGE = 15 V IC = 75 A, VGE = 15 V, TJ = 125 °C IC = 100 A, VGE = 15 V, TJ = 125 °C Gate threshold voltage Threshold voltage temperature coefficient Zero gate voltage collector current VGE(th) ΔVGE(th)/ΔTJ ICES VCE = VGE, IC = 250 μA VCE = VGE, IC = 1 mA (25 °C to 125 °C) VGE = 0 V, VCE = 1200 V VGE = 0 V, VCE = 1200 V, TJ = 125 °C I F = 75 A Diode forward voltage drop VFM IF = 100 A IF = 75 A, TJ = 125 °C IF = 100 A, TJ = 125 °C Gate to emitter leakage current IGES VGE = ± 20 V MIN. 1200 4.0 TYP. 3.4 3.8 4.0 4.53 5.0 - 11 7 580 3.7 4.1 3.7 4.2 MAX. 4.0 4.5 4.5 5.1 6.0 250 2000 4.9 5.5 5.1 5.7 ± 200 nA V mV/°C μA V UNITS SWITCHING CHARACTERISTICS (T = 25 °C unless otherwise noted) PARAMETER Total gate charge (turn-on) Gate to emitter charge (turn-on) Gate to collector charge (turn-on) Turn-on switching loss Turn-off switching loss Total switching loss Turn-on switching loss Turn-off switching loss Total switching loss Turn-on delay time Rise time Turn-off delay time Fall time Reverse bias safe operating area SYMBOL QG QGE QGC Eon Eoff Etot Eon Eoff Etot td(on) tr td(off) tf RBSOA TJ = 150 °C, IC = 200 A Rg = 10 Ω, VGE = 15 V to 0 V TJ = 150 °C VCC = 900 V, VP = 1200 V Rg = 10 Ω, VGE = 15 V to 0 V TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C VCC = 200 V I F = 50 A dI/dt = 10 A/μs 10 IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 5 Ω, L = 500 μH TJ = 125 °C TEST CONDITIONS IC = 75 A VCC = 600 V VGE = 15 V IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 5 Ω, L = 500 μH TJ = 25 °C (1) IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 5 Ω, L = 500 μH TJ = 125 °C (1) MIN. TYP. 630 65 250 1.74 1.46 3.20 2.44 2.35 4.79 268 43 308 127 Fullsquare MAX. ns mJ nC UNITS Short circuit safe operating area SCSOA 13 19 132 200 858 1900 18 23 189 270 1700 3105 μs Diode peak reverse recovery current Irr trr Qrr A Diode reverse recovery time ns Total reverse recovery charge nC Note (1) Energy losses include “tail” and diode reverse recovery www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 93172 Revision: 13-Jan-10 GB75YF120UT IGBT Fourpack Module, 75 A Vishay High Power Products THERMISTOR ELECTRICAL SPECIFICATIONS (T = 25 °C unless otherwise specified) PARAMETER Resistance B value SYMBOL R25 B TJ = 100 °C TJ = 25 °C/50 °C TEST CONDITIONS MIN. 4538 468.6 3307 TYP. 5000 493.3 3375 MAX. 5495 518 3443 UNITS Ω °K THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case IGBT Junction to case DIODE Case to sink, flat, greased surface Mounting torque (M5) Weight SYMBOL RthJC (IGBT) RthJC (DIODE) RthCS (MODULE) MIN. 2.7 TYP. 0.02 170 MAX. 0.26 0.56 3.3 Nm g °C/W UNITS 160 140 1000 100 120 TC (°C) 100 80 60 40 10 IC (A) 0 20 40 60 80 100 120 1 0.1 20 0 0.01 1 10 100 1000 10000 IC (A) VCE (V) Fig. 1 - Maximum DC Collector Current vs. Case Temperature 500 1000 Fig. 3 - Forward SOA TC = 25 °C; TJ ≤ 150 °C 400 100 PD (W) 300 200 10 100 0 0 20 40 60 80 100 120 140 160 IC (A) 1 10 100 1000 10000 TC (°C) VCE (V) Fig. 2 - Power Dissipation vs. Case Temperature Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V Document Number: 93172 Revision: 13-Jan-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A 160 140 120 100 20 18 16 14 ICE = 75A ICE = 50A ICE = 25A VGE = 18V VGE = 15V VGE = 12V VGE = 9V ICE (A) VCE (V) 12 10 8 6 80 60 40 20 0 0 1 2 3 4 5 6 4 2 0 7 9 11 13 15 17 19 VCE (V) VGE (V) Fig. 5 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 500 μs 160 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 20 18 16 14 Fig. 8 - Typical VCE vs. VGE TJ = 25 °C ICE = 75A ICE = 50A ICE = 25A VCE (V) ICE (A) 12 10 8 6 80 60 40 20 0 0 1 2 3 4 5 6 7 8 4 2 0 7 9 11 13 15 17 19 VCE (V) VGE (V) Fig. 6 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 500 μs 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 0.0 Fig. 9 - Typical VCE vs. VGE TJ = 125 °C 300 250 200 TJ = 25°C TJ = 125°C ICE (A) Tj = 25°C Tj = 125°C 1.0 2.0 3.0 4.0 5.0 IF (A) 150 100 50 0 5 6 7 8 9 10 11 12 VF (V) VGE (V) Fig. 7 - Typical Diode Forward Characteristics tp = 500 μs Fig. 10 - Typical Transfer Characteristics VCE = 20 V; tp = 500 μs www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 93172 Revision: 13-Jan-10 GB75YF120UT IGBT Fourpack Module, 75 A Vishay High Power Products 1 1000 tdOFF TJ = 125°C 0.1 Switching Time (ns) ICES (mA) tdON 100 tF 0.01 tR TJ = 25°C 0.001 400 600 800 1000 1200 10 20 30 40 50 60 70 80 VCES (V) IC (A) Fig. 11 - Typical Zero Gate Voltage Collector Current Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 500 μH; VCC = 600 V, Rg = 5 Ω; VGE = 15 V 14000 12000 5.5 5 4.5 TJ = 25°C 10000 4 3.5 3 2.5 2 0 0.2 0.4 0.6 0.8 1 TJ = 125°C Energy (μJ) Vgeth (V) 8000 6000 4000 2000 0 0 10 EON EOFF 20 30 40 50 IC (mA) RG (Ω ) Fig. 12 - Typical Threshold Voltage Fig. 15 - Typical Energy Loss vs. Rg TJ = 125 °C; L = 500 μH; VCC = 600 V, IC = 75 A; VGE = 15 V 10000 2500 2000 Switching Time (ns) Energy (μJ) 1000 EON EOFF 1500 tdOFF tdON tF 100 tR 1000 30 40 50 60 70 80 10 0 10 20 30 40 50 IC (A) RG (Ω ) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 500 μH; VCC = 600 V, Rg = 5 Ω; VGE = 15 V Fig. 16 - Typical Switching Time vs. Rg TJ = 125 °C; L = 500 μH; VCC = 600 V, IC = 75 A; VGE = 15 V Document Number: 93172 Revision: 13-Jan-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A 120 100 100 5 ohm 80 80 IRR (A) 60 60 27 ohm 40 IRR (A) 40 20 47 ohm 20 0 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0 0 10 20 30 40 50 IF (A) RG (Ω ) Fig. 17 - Typical Diode IRR vs. IF TJ = 125 °C 100 Fig. 19 - Typical Diode IRR vs. Rg TJ = 125 °C; IF = 75 A 16 14 80 12 IRR (A) 60 10 VGE (V) typical value 8 6 40 20 4 2 0 400 800 1200 1600 2000 0 0 100 200 300 400 500 600 700 dIF / dt (A/ μs) QG, Total Gate Charge (nC) Fig. 18 - Typical Diode IRR vs. dIF/dt VCC = 600 V; IF = 75 A Fig. 20 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 μH 1 D = 0.50 Thermal Response (ZthJC ) 0.1 0.20 0.10 0.05 0.01 0.02 0.01 0.001 0.0001 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 93172 Revision: 13-Jan-10 GB75YF120UT IGBT Fourpack Module, 75 A Vishay High Power Products Driver L D.U.T. 0 + VCC D+ CD.U.T. 900 V 1K Fig. C.T.1 - Gate Charge Circuit (Turn-Off) Fig. C.T.3 - S.C. SOA Circuit L Diode clamp/ D.U.T. L + - 80 V + Rg D.U.T. 1000 V -5V D.U.T./ Driver Rg + VCC Fig. C.T.2 - RBSOA Circuit Fig. C.T.4 - Switching Loss Circuit R= VCC ICM D.U.T. Rg + VCC Fig. C.T.5 - Resistive Load Circuit Document Number: 93172 Revision: 13-Jan-10 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 GB75YF120UT Vishay High Power Products IGBT Fourpack Module, 75 A ORDERING INFORMATION TABLE Device code G 1 1 2 3 4 5 6 7 8 - B 2 75 3 Y 4 F 5 120 6 U 7 T 8 Insulated gate bipolar transistor (IGBT) B = IGBT Generation 5 Current rating (75 = 75 A) Circuit configuration (Y = Fourpack) Package indicator (F = ECONO2) Voltage rating (120 = 1200 V) Speed/type (U = Ultrafast IGBT) T = Thermistor CIRCUIT CONFIGURATION C1 48 49 C2 21 22 QB1 G1 Aux1 41 43 QB2 5 6 C/E1 7 G4 Aux4 10 46 47 E1 RT1 12 32 33 G3 Aux3 28 29 QB3 QB4 15 16 C/E2 17 G2 Aux2 37 38 23 24 E2 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95252 www.vishay.com 8 For technical questions, contact: indmodules@vishay.com Document Number: 93172 Revision: 13-Jan-10 Outline Dimensions Vishay Semiconductors ECONO2 4PAK DIMENSIONS in millimeters (inches) ZY 20.5 + 1.0 - 0.5 13.2 ± 0.15 0.8 105 ± 0.1 1.25 - 0.02 - 0.06 X 2:1 0.8 ± 0.03 34.29 30.48 34.29 30.48 26.67 22.86 22.86 19.05 19.05 11.43 11.43 7.62 7.62 3.81 4443 47 46 4140 38 373635 33 32 30 29282726 21 ± 0.03 23 24 11.43 11.43 45.4 ± 0.2 42 ± 0.15 5.5 ± 0.05 2 45678 10 12 15 16 17 19 7.62 7.62 11.43 15.24 19.05 22.86 30.48 39.49 19.05 22.86 26.67 34.29 39.49 7.5 0 -03 93 ± 0.15 107.8 ± 0.2 Detail R3 Z 2:1 1 0.5 21 ± 0.03 49 48 21 22 Y 2:1 0.85 10.5 0.6 0.8 ± 0.03 1.25 - 0.02 - 0.06 83 0 - 0.2 Document Number: 95252 Revision: 29-Nov-07 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 7.62 7.62 10.5 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1