VS-GT75YF120NT

VS-GT75YF120NT www.vishay.com Vishay Semiconductors IGBT 4 Pack Module, 75 A FEATURES • Trench gate field stop IGBT • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • Designed and qualified for industrial market ECONO 2 (Package example) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 BENEFITS • Benchmark efficiency for SMPS appreciation in particular HF welding PRIMARY CHARACTERISTICS VCES 1200 V IC at TC = 87 °C 75 A VCE(on) (typical) 2.20 V Speed 8 kHz to 30 kHz Package ECONO 2 Circuit configuration 4 pack • Rugged transient performance • Low EMI, requires less snubbing • Direct mounting to heatsink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER Collector to emitter voltage Continuous collector current SYMBOL IC Pulsed collector current, see fig. C.T.5 ICM Clamped inductive load current ILM Diode continuous forward current IF Diode maximum forward current IFM Gate to emitter voltage VGE Maximum power dissipation (IGBT) Isolation voltage TEST CONDITIONS VCES PD VISOL MAX. UNITS 1200 V TC = 25 °C 118 TC = 80 °C 81 TJ = 150 °C, tp = 6 ms, VGE = 15 V 270 250 TC = 25 °C TC = 80 °C A 40 25 150 ± 20 TC = 25 °C 431 TC = 80 °C 241 AC 2500 (min) V W V Revision: 26-Jul-2021 Document Number: 96843 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75YF120NT www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL Collector to emitter breakdown voltage VBR(CES) Collector to emitter voltage VCE(ON) Gate threshold voltage Threshold voltage temperature coefficient VGE(th) ΔVGE(th)/ΔTJ Zero gate voltage collector current ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES MIN. TYP. MAX. VGE = 0 V, IC = 4 mA TEST CONDITIONS 1200 - - IC = 75 A, VGE = 15 V - 2.20 2.60 IC = 75 A, VGE = 15 V, TJ = 125 °C - 2.44 7.6 VCE = VGE, IC = 4 mA UNITS V 4.6 5.9 VCE = VGE, IC = 4 mA (25 °C to 125 °C) - -13 - VGE = 0 V, VCE = 1200 V - 1.4 100 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 1130 - IF = 75 A - 3.9 5 IF = 75 A, TJ = 125 °C - 4.37 - VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS IC = 75 A VCC = 960 V VGE = 15 V - 333 - mV/°C μA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Total gate charge (turn-on) QG Gate to emitter charge (turn-on) QGE Gate to collector charge (turn-on) QGC Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) TEST CONDITIONS - 36 - - 173 - IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 4.7 Ω, L = 500 μH TJ = 25 °C (1) - 2.08 - - 2.56 - - 4.64 - IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 4.7 Ω, L = 500 μH TJ = 125 °C (1) - 3.35 - - 4.28 - - 7.63 - - 94 - - 21 - - 157 - - 179 - IC = 75 A, VCC = 600 V VGE = 15 V, Rg = 4.7 Ω, L = 500 μH TJ = 125 °C tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 250 A, VCC = 700 V, VP = 1200 V, Rg = 10 Ω, VGE = 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C VCC = 600 V, VP = 1200 V Rg = 10 Ω, VGE = 15 V to 0 V Diode peak reverse recovery current Irr Diode reverse recovery time trr Total reverse recovery charge Qrr - - TJ = 25 °C - 1.45 - TJ = 125 °C - 2.35 - - 0.401 - - 0.655 - TJ = 25 °C - 0.181 - TJ = 125 °C - 0.54 - TJ = 125 °C VCC = 600 V IF = 75 A dI/dt = 10 A/μs mJ ns Fullsquare 10 TJ = 25 °C nC μs A μs μC Note (1) Energy losses include “tail” and diode reverse recovery INTERNAL NTC - THERMISTOR SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS TYP. R25 TC= 25 °C 5000 R100 TC= 100 °C 493 ± 5 % B25/50 R2 = R25 exp. [B25/50 (1/T2 - 1/(298.15K))] 3375 ± 5 % K 220 °C Dissipation constant 2 mW/°C Thermal time constant 8 s Resistance B-value Maximum operating temperature UNITS Ω Revision: 26-Jul-2021 Document Number: 96843 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75YF120NT www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS TJ, TStg -40 - 150 °C Junction to case IGBT RthJC - - 0.29 Junction to case DIODE RthJC - - 1 Case to sink per module RthCS Junction and storage temperature range TEST CONDITIONS Mounting torque (M5) Weight - 0.05 - 2.7 - 3.3 Nm - 170 - g 180 Allowable Case Temperature (°C) 200 175 150 TJ = 125 °C 125 IC (A) °C/W 100 TJ = 25 °C 75 TJ = 150 °C 50 25 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 160 140 120 DC 100 80 60 40 20 0 0 4.0 20 40 60 80 100 120 VCE (V) IC - Continuous Collector Current (A) Fig. 1 - Typical Trench IGBT Output Characteristics, VGE = 15 V Fig. 3 - Maximum Trench IGBT Continuous Collector Current vs. Case Temperature 200 100 180 160 140 80 70 120 60 IC (A) IC (A) VCE = 20 V 90 VGE = 12 V VGE = 15 V VGE = 18 V 100 80 50 40 60 VGE = 9 V 30 40 20 20 10 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE (V) Fig. 2 - Typical Trench IGBT Output Characteristics, TJ = 125 °C TJ = 125 °C TJ = 25 °C 5 5.5 6 6.5 7 7.5 8 8.5 9 VGE (V) Fig. 4 - Typical Trench IGBT Transfer Characteristics Revision: 26-Jul-2021 Document Number: 96843 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75YF120NT www.vishay.com Vishay Semiconductors 1000 6.5 TJ = 25 °C tf Switching Time (ns) 6.0 VGEth (V) 5.5 5.0 4.5 TJ = 125 °C 4.0 td(off) td(on) 100 10 tr 3.5 3.0 1 0 0.5 1 1.5 2 2.5 3 3.5 4 20 30 40 50 IC (mA) 60 70 80 IC (A) Fig. 5 - Typical Trench IGBT Gate Threshold Voltage Fig. 8 - Typical Trench IGBT Switching Time vs. IC (with Antiparallel Diode) TJ = 125 °C, VCC = 600 V, Rg = 4.7 Ω, VGE = +15 V/-15 V, L = 500 μH 16 10 TJ = 150 °C 12 0.1 Energy (mJ) ICES (mA) 14 TJ = 125 °C 1 0.01 8 Eon 6 4 TJ = 25 °C 0.001 10 Eoff 2 0.0001 0 200 400 600 800 1000 1200 0 5 10 15 20 VCES (V) Fig. 6 - Typical Trench IGBT Zero Gate Voltage Collector Current 25 30 35 40 45 50 Rg (:) Fig. 9 - Typical Trench IGBT Energy Loss vs. Rg (with Antiparallel Diode) TJ = 125 °C, VCC = 600 V, IC = 75 A, VGE = +15 V/-15 V, L = 500 μH 1000 5 4.5 Switching Time (ns) 4 Energy (mJ) 3.5 3 2.5 Eoff 2 1.5 Eon 1 tf 100 td(off) td(on) tr 0.5 10 0 20 25 30 35 40 45 50 55 60 65 70 75 80 IC (A) Fig. 7 - Typical Trench IGBT Energy Loss vs. IC (with Antiparallel Diode) TJ = 125 °C, VCC = 600 V, Rg = 4.7 Ω, VGE = +15 V/-15 V, L = 500 μH 0 5 10 15 20 25 30 35 40 45 50 Rg (Ω) Fig. 10 - Typical Trench IGBT Switching Time vs. Rg (with Antiparallel Diode) TJ = 125 °C, VCC = 600 V, IC = 75 A, VGE = +15 V/-15 V, L = 500 μH Revision: 26-Jul-2021 Document Number: 96843 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75YF120NT www.vishay.com Vishay Semiconductors 12 18 16 10 14 TJ =125 °C 8 10 Irr (A) VGE (V) 12 8 4 6 TJ = 25 °C 4 TJ = 25 °C VCE= 960 V IC = 75 A 2 2 0 0 0 50 100 150 200 250 300 350 0 400 20 40 60 80 100 QG (nC) dIF/dt (A/μs) Fig. 11 - Typical Trench IGBT Gate Charge vs. Gate to Emitter Voltage Fig. 14 - Typical Diode Reverse Recovery Current vs. dIF/dt 1600 150 140 130 120 110 100 90 80 70 60 50 40 30 20 10 0 TJ = 125 °C 1400 1200 1000 Qrr (nC) IF (A) 6 TJ = 125 °C TJ = 25 °C 800 600 400 TJ = 25 °C 200 0 0 1.0 2.0 3.0 4.0 5.0 6.0 0 7.0 20 40 60 80 100 VFM (V) dIF/dt (A/μs) Fig. 12 - Typical Diode Forward Characteristics Fig. 15 - Typical Diode Reverse Recovery Charge vs. dIF/dt 1000 800 700 100 600 400 IC (A) trr (ns) 500 TJ = 125 °C 10 300 1 200 TJ = 25 °C 100 0 0.1 0 20 40 60 80 100 dIF/dt (A/μs) Fig. 13 - Typical Diode Reverse Recovery Time vs. dIF/dt 1 10 100 1000 VCE (V) Fig. 16 - Trench IGBT Reverse BIAS SOA TJ = 150 °C, IC = 250 A, Rg = 10 Ω, VGE = +15 V / 0 V, VCC = 700 V, Vp = 1200 V Revision: 26-Jul-2021 Document Number: 96843 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75YF120NT ICE - Collector-Emitter Current (A) www.vishay.com Vishay Semiconductors tp = 100 μs TA = 25 °C TJ = 150 °C Single pulse tp = 500 μs tp = 1 ms tp = 6 ms 100 10 BVCES limited 1 0.1 1 10 100 1000 VCE - Collector-Emitter Voltage (V) Fig. 17 - Trench IGBT Safe Operating Area ZthJC - Thermal Impedance Junction to Case (°C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.0001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 18 - Maximum Trench IGBT Thermal Impedance ZthJC Characteristics ZthJC - Thermal Impedance Junction to Case (°C/W) 10 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.000001 0.00001 0.0001 0.001 t1 - Rectangular Pulse Duration (s) Fig. 19 - Maximum Diode Thermal Impedance ZthJC Characteristics Revision: 26-Jul-2021 Document Number: 96843 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75YF120NT www.vishay.com Vishay Semiconductors Driver L + VCC - D.U.T. 0 D + C - 900 V 1K D.U.T. Fig. 20 - Gate Charge Circuit (Turn-Off) Fig. 22 - S.C. SOA Circuit L Diode clamp/ D.U.T. + - + - 80 V L D.U.T. -5V 1000 V D.U.T./ Driver Rg + VCC Rg Fig. 21 - RBSOA Circuit Fig. 23 - Switching Loss Circuit R= VCC ICM D.U.T. + VCC Rg Fig. 24 - Resistive Load Circuit Revision: 26-Jul-2021 Document Number: 96843 7 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75YF120NT www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G T 75 Y F 120 N T 1 2 3 4 5 6 7 8 9 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - T = Trench gate field stop IGBT 4 - Current rating (75 = 75 A) 5 - Circuit configuration (Y = 4 pack) 6 - Package indicator (F = ECONO 2) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (N = ultrafast with reduced diode, speed 8 kHz to 60 kHz) 9 - NTC Thermistor CIRCUIT CONFIGURATION 21 20 50 49 QB1 QB3 41 28 29 42 QB2 8 6 7 QB4 37 32 38 33 18 12 13 14 19 46 45 25 24 NTC Revision: 26-Jul-2021 Document Number: 96843 8 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT75YF120NT www.vishay.com Vishay Semiconductors 7.4 17 15.9 20.5 3.5 DIMENSIONS in millimeters Ø 6.1 69.36 73.17 54.12 57.93 35.07 38.88 0.8 19.83 23.64 4.3 0.85 1.25 A 45 46 5.5 20.95 38 37 33 32 29 28 25 24 15.24 11.43 0 11 49 21 20 80.79 18 19 76.98 61.74 38.88 57.93 12 13 14 54.12 6 7 8 31.26 35.07 6.8 0 50 11.43 15.24 20.95 86.2 32 38.4 45 Ø 42 41 6.5 Ø 2.1 1.5 Ø 2.5 0.8 A 2:1 72.7 75.7 82.1 93 107.5 Revision: 26-Jul-2021 Document Number: 96843 9 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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