VS-HFA08TB60HN3

VS-HFA08TB60HN3 www.vishay.com Vishay Semiconductors HEXFRED® Ultrafast Soft Recovery Diode, 8 A FEATURES • Ultrafast and ultrasoft recovery • Very low IRRM and Qrr • AEC-Q101 qualified meets JESD 201 class 2 whisker test 2 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3 TO-220AC 1 BENEFITS Base cathode 2 • Reduced RFI and EMI • Reduced power loss in diode and switching transistor • Higher frequency operation • Reduced snubbing 1 Cathode • Reduced parts count 3 Anode DESCRIPTION VS-HFA08TB60... is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 600 V and 8 A continuous current, the VS-HFA08TB60... is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED® product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off” during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA08TB60... is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. PRODUCT SUMMARY Package TO-220AC IF(AV) 8A VR 600 V VF at IF 1.4 V trr typ. 18 ns TJ max. 150 °C Diode variation Single die ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Maximum continuous forward current IF TEST CONDITIONS TC = 100 °C VALUES UNITS 600 V 8 Single pulse forward current IFSM 60 Maximum repetitive forward current IFRM 24 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 °C 36 TC = 100 °C 14 -55 to +150 A W °C Revision: 15-Jul-15 Document Number: 94970 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08TB60HN3 www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS MIN. TYP. MAX. 600 - - - 1.4 1.7 - 1.7 2.1 IF = 8.0 A, TJ = 125 °C - 1.4 1.7 - 0.3 5.0 - 100 500 - 10 25 pF - 8.0 - nH MIN. TYP. MAX. UNITS IR = 100 μA IF = 8.0 A Maximum forward voltage VFM IF = 16 A See fig. 1 Maximum reverse leakage current IRM VR = VR rated TJ = 125 °C, VR = 0.8 x VR rated See fig. 2 Junction capacitance CT VR = 200 V See fig. 3 Series inductance LS Measured lead to lead 5 mm from package body UNITS V μA DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER Reverse recovery time Peak recovery current Reverse recovery charge Peak rate of fall of recovery current during tb SYMBOL TEST CONDITIONS trr IF = 1.0 A, dIF/dt = 200 A/μs, VR = 30 V - 18 - trr1 TJ = 25 °C - 37 - trr2 TJ = 125 °C - 55 - IRRM1 TJ = 25 °C - 3.5 - IRRM2 TJ = 125 °C - 4.5 - IF = 8.0 A dIF/dt = 200 A/μs VR = 200 V ns A Qrr1 TJ = 25 °C - 65 - Qrr2 TJ = 125 °C - 124 - dI(rec)M/dt1 TJ = 25 °C - 240 - dI(rec)M/dt2 TJ = 125 °C - 210 - MIN. TYP. MAX. UNITS - - 300 °C - - 3.5 nC A/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA Typical socket mount - - 80 Thermal resistance, case to heatsink RthCS Mounting surface, flat, smooth and greased - 0.5 - - 2.0 - - 0.07 - oz. - 12 (10) kgf · cm (lbf · in) 0.063" from case (1.6 mm) for 10 s Weight 6.0 (5.0) Mounting torque Marking device Case style TO-220AC K/W g HFA08TB60H Revision: 15-Jul-15 Document Number: 94970 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08TB60HN3 Vishay Semiconductors 1000 100 TJ = 150 °C 10 1 TJ = 150 °C TJ = 125 °C TJ = 25 °C 0.1 0.4 100 IR - Reverse Current (µA) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 125 °C 10 1 0.1 TJ = 25 °C 0.01 0.001 0.8 1.2 1.6 2.0 2.4 2.8 0 3.2 100 200 400 300 500 600 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current Fig. 2 - Typical Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 1 1 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Response 10 1 PDM Single pulse (thermal response) 0.01 0.00001 t1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 0.0001 0.001 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Jul-15 Document Number: 94970 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08TB60HN3 www.vishay.com Vishay Semiconductors 80 500 IF = 16 A IF = 8 A IF = 4 A 400 Qrr (nC) trr (ns) 60 VR = 200 V TJ = 125 °C TJ = 25 °C 40 20 300 IF = 16 A IF = 8 A IF = 4 A 200 100 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 0 100 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt Fig. 7 - Typical Stored Charge vs. dIF/dt 20 10 000 VR = 200 V TJ = 125 °C TJ = 25 °C dI(rec)M/dt (A/µs) 15 Irr (A) 1000 IF = 16 A IF = 8 A IF = 4 A 10 IF = 16 A IF = 8 A IF = 4 A 1000 5 VR = 200 V TJ = 125 °C TJ = 25 °C 0 100 100 100 1000 1000 dIF/dt (A/µs) dIF/dt (A/µs) Fig. 6 - Typical Recovery Current vs. dIF/dt Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Revision: 15-Jul-15 Document Number: 94970 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA08TB60HN3 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 08 TB 60 H N3 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - HEXFRED® family 3 - Electron irradiated 4 - Current rating (08 = 8 A) 4 5 - Package: TB = TO-220AC 4 6 - Voltage rating (60 = 600 V) 7 - H = AEC-Q101 qualified 8 - Environmental digit: N3 = halogen-free, RoHS-compliant, and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-HFA08TB60HN3 QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION 50 1000 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking information www.vishay.com/doc?95221 TO-220AC-N3 www.vishay.com/doc?95068 Revision: 15-Jul-15 Document Number: 94970 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches (6) B Seating plane A E A ØP 0.014 M B A M E2 (7) Q 2 3 D D A L1 E A1 (6) H1 (7) (6) D 1 C Thermal pad C H1 D2 Detail B (6) 2 x b2 2xb Detail B D1 1 2 3 Lead tip L3 C E1 (6) L4 L c e1 A Conforms to JEDEC® outline TO-220AC View A - A A2 0.015 M B A M SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. INCHES MAX. MIN. MAX. NOTES A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6 A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7 A2 2.56 2.92 0.101 0.115 e1 4.88 5.28 0.192 0.208 b 0.69 1.01 0.027 0.040 H1 5.84 6.86 0.230 0.270 b1 0.38 0.97 0.015 0.038 b2 1.20 1.73 0.047 0.068 b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552 L1 3.32 3.82 0.131 0.150 4 L3 1.78 2.13 0.070 0.084 c 0.36 0.61 0.014 0.024 L4 0.76 1.27 0.030 0.050 c1 0.36 0.56 0.014 0.022 4 ØP 3.54 3.73 0.139 0.147 3 Q 2.60 3.00 0.102 0.118 D 14.85 15.25 0.585 0.600 D1 8.38 9.02 0.330 0.355 D2 11.68 12.88 0.460 0.507 6 E 10.11 10.51 0.398 0.414 3, 6 6, 7 2 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Revision: 09-Sep-2019 Document Number: 95221 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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