GT5G131
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT5G131
Strobe Flash Applications
Unit: mm • • • • • 3-V gate drive voltage: VGE = 3.0 V (min) (@IC = 130 A) Supplied in compact and thin package requires only a small mounting area 5th generation (trench gate structure) IGBT Enhancement-mode Peak collector current: IC = 130 A (max)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms (Note 1) Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 5 130 1.1 150 −55~150 2 Unit V V
Collector current Collector power dissipation Junction temperature Storage temperature range
A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-6J1C
Note 1: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t]
Weight: 0.080 g (typ.)
Equivalent Circuit
8 7 6 5
1
2
3
4
These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/µs.
1
2002-05-17
GT5G131
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = ±6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 130 A, VGE = 3 V VCE = 10 V, VGE = 0, f = 1 MHz 3V 0 2.3 Ω 30 Ω Min 0.5 Typ. 2.2 2800 1.3 1.4 1.5 1.8 Max ±10 10 1.0 7.0 Unit µA µA V V pF
µs
VIN: tr < 100 ns = tf < 100 ns = Duty cycle < 1% =
300 V
114 °C/W
Note 2: Drive operation: Mount on glass epoxy board [1 inch × 1.5 t]
Marking
GT5G131 ※
Type ※ Lot Number Month (Starting from Alphabet A) Year (Last Number of the Christian Era)
2
2002-05-17
GT5G131
IC – VCE
200 3.0 160 160 3.5 200
IC – VCE
3.0
(A)
(A)
3.5
2.5
IC
120
IC
2.5 120
Collector current
Collector current
80
VGE = 2.0 V
80
VGE = 2.0 V
40 Common emitter Tc = −40°C 0 0 1 2 3 4 5
40 Common emitter Tc = 25°C 0 0 1 2 3 4 5
Collector-emitter voltage VCE
(V)
Collector-emitter voltage VCE
(V)
IC – VCE
200 200
IC – VCE
(A)
(A)
160
3.5
3.0
3.5 160 3.0 120
IC
120
Collector current
Collector current
2.5
IC
2.5 80 VGE = 2.0 V 40 Common emitter Tc = 125°C
80
VGE = 2.0 V
40 Common emitter Tc = 70°C 0 0 1 2 3 4 5
0
0
1
2
3
4
5
Collector-emitter voltage VCE
(V)
Collector-emitter voltage VCE
(V)
IC – VGE
200 3
VCE (sat) – Tc
IC = 130 A 2.5 100 70 1.5 40 1 0.5 Common emitter VGE = 3 V 0 −80 −40 0 40 80 120 160
(A)
160
25
70
Collector-emitter saturation voltage VCE (sat) (V)
5
IC
2
120
Collector current
Tc = −40°C
125
80
40 Common emitter VCE = 5 V 0 0 1 2 3 4
Gate-emitter voltage
VGE
(V)
Case temperature Tc
(°C)
3
2002-05-17
GT5G131
VCE – VGE
5 5
VCE – VGE
(V)
Common emitter Tc = −40°C Common emitter Tc = 25°C 4 IC = 130 A 3 70 2 100
(V)
4 IC = 130 A 3 70 2
Collector-emitter voltage VCE
100
1
40
Collector-emitter voltage VCE
1
40
0 0
1
2
3
4
5
0 0
1
2
3
4
5
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
VCE – VGE
5 5
VCE – VGE
(V)
Common emitter Tc = 70°C Common emitter Tc = 125°C 4
(V)
4 IC = 130 A 3 100
Collector-emitter voltage VCE
Collector-emitter voltage VCE
70
3
70
100 IC = 130 A
2
2
1
40
1
40
0
0
1
2
3
4
5
0 0
1
2
3
4
5
Gate-emitter voltage
VGE
(V)
Gate-emitter voltage
VGE
(V)
VGE (OFF) – Tc
Gate-emitter cut-off voltage VGE (OFF) (V)
1.4 Common emitter 1.2 VCE = 5 V IC = 1 mA 10000
C – VCE
Cies
1 0.8 0.6
(pF) Capacitance C
1000
100 Cres
Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 10 100 1000
0.4 0.2 0 −80
−40
0
40
80
120
160
10
1
Case temperature Tc
(°C)
Collector-emitter voltage VCE
(V)
4
2002-05-17
GT5G131
Switching Time – RG
10 500
VCE, VGE – QG
10
(V)
Collector-emitter voltage VCE
tf 1 tr Common emitter VCE = 300 V VGE = 3 V IC = 130 A Tc = 25°C 0.1 1 10 100 1000
Switching time
200 VGE Common emitter 100 VCE 0 0 20 40 VCC = 300 V RL = 2.3 Ω Tc = 25°C 60
4
2
0 80
Gate resistance RG
(Ω)
Gate charge
QG
(nC)
Switching Time – ICP
10 800
Maximum Operating Area
(µF)
(µs)
toff tf 1 ton
600
Main capacitance CM
Switching time
400
Common emitter tr VCC = 300 V VGE = 3 V RG = 30 Ω Tc = 25°C 100 150 200
VCM = 350 V 200 Tc < 70°C = VGE = 4 V 10 Ω < RG < 300 Ω = = 0 0 40 80 120 160 200
0.1
0
50
Collector current
IC
(A)
Peak collector current
ICP
(A)
Minimum Gate Drive Area
200
(A)
160
ICP
Peak collector current
120
Tc = 25°C 70
80
40
0
0
2
4
6
8
Gate-emitter voltage
VGE
(V)
5
2002-05-17
Gate-emitter voltage
300
6
VGE
toff
ton
400
8
(µs)
(V)
GT5G131
RESTRICTIONS ON PRODUCT USE
000707EAA
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. • The information contained herein is subject to change without notice.
6
2002-05-17
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