GT10G131(TE12L,Q)

GT10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT10G131 Strobe Flash Applications Unit: mm • 5th generation (trench gate structure) IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max) • Built-in zener diode between gate and emitter • SOP-8 package Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation(t=10 s) DC Pulse Pulse (Note 1) (Note 2a) (Note 2b) Junction temperature Storage temperature range Symbol Rating Unit VCES VGES VGES 400 ±6 ±8 V ICP 200 A PC (1) PC (2) Tj Tstg 1.9 1.0 150 −55~150 W W °C °C V 1.2.3 Emitter 4 Gate 5.6.7.8 Collector Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). JEDEC ⎯ JEITA ⎯ TOSHIBA 2-6J1C Weight: 0.08 g (typ.) Circuit Configuration 8 7 6 5 1 2 3 4 Thermal Characteristics Characteristics Thermal resistance , junction to ambient (t = 10 s) (Note2a) Thermal resistance , junction to ambient (t = 10 s) (Note2b) Marking Symbol Rating Unit Rth (j-a) (1) 65.8 °C/W Rth (j-a) (2) 125 °C/W (Note 4) Note 3: A line under a Lot No. identifies the indication of product Labels. Not underlined : [[Pb]]/INCLUDES > MCV 10G131 Part No. (or abbreviation code) Lot No. Underlined : [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Note 3 The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Note : For (Note 1) , (Note 2a) , (Note 2b) and (Note 4) Please refer to the next page. Start of commercial production 2003-06 1 2013-11-01 GT10G131 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGES VGE = ± 6 V, VCE = 0 V ⎯ ⎯ ± 10 μA Collector cut-off current ICES VCE = 400 V, VGE = 0 V ⎯ ⎯ 10 μA VGE (OFF) IC = 1 mA, VCE = 5 V 0.6 0.9 1.2 V VCE (sat) IC = 200 A, VGE = 4 V ⎯ 2.3 ⎯ V VCE = 10 V, VGE = 0 V, f = 1 MHz ⎯ 2800 ⎯ pF ⎯ 2.8 ⎯ ⎯ 3.1 ⎯ ⎯ 1.8 ⎯ ⎯ 2.0 ⎯ Collector-emitter saturation voltage Input capacitance Cies Rise time tr 4V ton Turn-on time Switching time Fall time tf Turn-off time toff 0 51 Ω VIN: tr < = 100 ns tf < = 100 ns < 1% Duty cycle = 1.5Ω Gate-emitter cut-off voltage μs Vcc ≈ 300V Note Note 1: Please use devices on condition that the junction temperature is below 150°C. Repetitive rating: pulse width limited by maximum junction temperature. Note 2a : Device mounted on a glass-epoxy board (a) Note 2b : Device mounted on a glass-epoxy board (b) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) FR-4 25.4 × 25.4 × 0.8 (Unit: mm) for GATE for COLLECTOR for EMITTER for COLLECTOR for EMITTER for GATE Note 4: ○ on lower right of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) ※ [[G]]/RoHS [[Pb]] : It is marking about an underline to a week of manufacture mark. 2 2013-11-01 GT10G131 Caution on handling This device is MOS gate type. Therefore , please care of a protection from ESD in your handling . Caution in design The slope of the collector-emitter voltage, dv/dt, during turn-off should be kept below 400 V/μs. There is no limit to the slope of the collector-emitter voltage during turn-on. If there is a gate resistor, RG(ON), that controls the gate current, ensure that it will not exceed the gate driver's current capability. In cases where both gate turn-on and turn-off are controlled with a single gate resistor, use of a resistor of 51 Ω or greater is recommended. ●definition of dv/dt The slope of vce from 30v to 90v (attached figure.1) dv/dt = (90V-30V) / (⊿t) = 60V / ⊿t ●waveform (Expanded View of the dv/dt Period) ●waveform IC IC(begin) VCE IC(end) VCE 90V 30V 0V, 0A dv/dt period 3 ⊿t 2013-11-01 GT10G131 IC – VCE IC – VCE 200 200 3.0 4.0 160 (A) (A) 2.5 160 VGE = 5.0 V IC 2.0 120 Collector current Collector current 4.0 IC 3.0 VGE = 5.0 V 2.5 80 40 2.0 120 80 40 Common emitter Common emitter Tc = 25°C Tc = −10°C 0 0 1 2 3 4 Coleector-emitter voltage 0 0 5 VCE (V) 1 2 3 Collector-emitter voltage IC – VCE 3.0 2.5 (A) 160 2.5 VGE = 5.0 V 120 Collector current IC IC VGE = 5.0 V 160 2.0 80 40 120 2.0 80 40 Common emitter Common emitter Tc = 70°C 0 0 1 2 3 Collector-emitter voltage 4 VCE Tc = 125°C 0 0 5 1 (V) IC – VCE 3 5 (V) IC – VGE (A) 160 25 Tc = −10°C 160 Tc = −10°C IC 70 Collector current 120 125 80 40 25 70 120 125 80 40 Common emitter Common emitter 0 0 4 VCE 200 IC (A) 2 Collector-emitter voltage 200 Collector current (V) 4.0 3.0 4.0 (A) VCE 5 IC – VCE 200 200 Collector current 4 VCE = 5 V VGE = 4 V 1 2 3 Collector-emitter voltage 4 VCE 0 0 5 (V) 1 2 3 Gate-emitter voltage 4 4 VGE 5 (V) 2013-11-01 GT10G131 VCE (sat) – Tc VGE (OFF) – Tc 1.6 Common emitter Common emitter VCE = 5 V VGE = 4 V Gate-emitter cut-off voltage VGE (OFF) (V) IC = 200 A 3 170 150 2 120 90 60 1 50 Case temperature 100 Tc 0.4 0 −50 150 (°C) 0 50 Case temperature (V) VCE Collector-emitter voltage Capacitance C (pF) 1000 100 Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25°C Cres 10 VCE 500 6 Common emitter VCC = 300 V RL = 1.5 Ω Tc = 25°C 4 300 3 200 2 VCE 100 1 10 20 30 Gate charge (V) Switching time – RG 0 50 40 QG (nC) Switching time – IC 10 10 Common emitter VCE = 300 V VGE = 4 V IC = 200 A Tc = 25°C ton toff tf 3 10 Gate resistance 100 RG toff (μs) tr Swithching time (μs) 5 VGE 400 0 0 1000 100 Collector-emitter voltage Switching time (°C) 600 Cies 1 1 Tc 150 VCE, VGE – QG C – VCE 10000 10 1 100 (V) 0 0.8 VGE 0 −50 IC = 1 mA 1.2 Gate-emitter voltage Collector-emitter saturation voltage VCE (sat) (V) 4 tf 1 (Ω) Common emitter tr 0.1 0 1000 ton 50 VCC = 300 V VGE = 4 V RG = 51 Ω Tc = 25°C 100 Collector current 5 150 IC 200 (A) 2013-11-01 GT10G131 Maximum operating area Minimum gate drive area (μF) 800 Tc = 25°C 70 Main capacitance Peak collector current 160 120 80 40 0 0 2 4 Gate-emitter voltage 600 CM 200 ICP (A) 240 6 VGE 400 200 0 0 8 VCM = 350 V Tc < = 70°C VGE = 4.0 V < RG = < 300 Ω 10 Ω = 40 80 120 Peak collector current (V) 6 160 ICP 200 240 (A) 2013-11-01 GT10G131 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. 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