GT8G131

GT8G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT8G131 Strobe Flash Applications Unit: mm · · · · · Supplied in Compact and Thin Package Requires Only a Small Mounting Area 4th generation (trench gate structure) IGBT Enhancement-mode 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 150 A) Peak collector current: IC = 150 A (max) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage DC Pulse DC 1 ms Symbol VCES VGES VGES IC ICP PC Tj Tstg Rating 400 ±6 ±8 8 150 1.1 150 -55~150 2 Unit V V Collector current A W °C °C Collector power dissipation (Note 1) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 2-6J1C Note 1: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t] Weight: 0.080 g (typ.) Equivalent Circuit 8 7 6 5 1 2 3 4 These devices are MOS type. Users should follow proper ESD handling procedures. Operating condition of turn-off dv/dt should be lower than 400 V/ms. 1 2003-03-18 GT8G131 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance (Note 2) tf toff Rth (j-a) 2 Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton Test Condition VGE = ±6 V, VCE = 0 VCE = 400 V, VGE = 0 IC = 1 mA, VCE = 5 V IC = 150 A, VGE = 4 V VCE = 10 V, VGE = 0, f = 1 MHz 4V 0 2.0 9 51 W Min ¾ ¾ 0.6 ¾ ¾ Typ. ¾ ¾ ¾ 3.0 3800 1.5 1.7 1.9 2.4 ¾ Max ±10 10 1.5 7.0 ¾ Unit mA mA V V pF ¾ ¾ ¾ ¾ ¾ ¾ ¾ ms ¾ VIN: tr < 100 ns = tf < 100 ns = Duty cycle < 1% = ¾ 300 V ¾ 114 °C/W Note 2: Drive operation: Mount on glass epoxy board [1 inch ´ 1.5 t] Marking GT8G131 ※ Type Lot No. ● on lower left of the marking indicates Pin 1. ※ Weekly code: (Three digits) Week of manufacture (01 for first week of year, continues up to 52 or 53) Year of manufacture (One low-order digits of calendar year) 2 2003-03-18 GT8G131 IC – VCE 200 Common emitter Tc = -40°C 160 4.5 V VGE = 5 V 200 4.0 V 160 Common emitter Tc = 25°C IC – VCE 4.5 V 4.0 V (A) (A) 3.5 V 3.0 V VGE = 5 V 120 3.5 V IC 120 IC Collector current 80 2.5 V Collector current 3.0 V 80 2.5 V 40 40 0 0 1 2 3 4 5 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – VCE 200 Common emitter Tc = 70°C 4.5 V 200 4.0 V 160 Common emitter Tc = 125°C IC – VCE 4.5 V VGE = 5 V 4.0 V (A) (A) 160 VGE = 5 V 3.5 V 3.5 V IC 120 IC Collector current 3.0 V 120 3.0 V 80 2.5 V 40 80 2.5 V 40 0 0 1 2 3 4 5 0 Collector current 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC – VGE 200 5 Common emitter VCE = 5 V 25°C 70°C Common emitter VGE = 4 V 4 VCE (sat) – Tc (A) 160 Collector-emitter saturation voltage VCE (sat) (V) IC = 150 A 3 120 A 2 90 A 60 A 1 IC 120 -40°C Tc = 125°C Collector current 80 40 0 0 1 2 3 4 5 0 -80 -40 0 40 80 120 160 Gate-emitter voltage VGE (V) Case temperature Tc (°C) 3 2003-03-18 GT8G131 VCE – VGE 5 5 VCE – VGE (V) Common emitter Tc = 25°C 4 IC = 150 A 3 120 A 90 A 2 60 A (V) Common emitter Tc = -40°C 4 VCE Collector-emitter voltage 3 120 A 90 A 2 60 A 1 Collector-emitter voltage 5 IC = 150 A VCE 1 0 0 1 2 3 4 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VCE – VGE 5 5 VCE – VGE (V) Common emitter Tc = 125°C 4 IC = 150 A 3 120 A 90 A 2 60 A (V) Common emitter Tc = 70°C 4 IC = 150 A 3 120 A 90 A 2 60 A VCE Collector-emitter voltage 1 Collector-emitter voltage 4 5 VCE 1 0 0 0 1 2 3 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) VGE (OFF) – Tc (V) 2.0 Common emitter VGE = 5 V IC = 1 mA 5000 3000 C – VCE Cies Gate-emitter cut-off voltage VGE (OFF) 1.6 Capacitance C 1.2 (pF) 0.8 1000 300 100 Cres 30 Coes Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 1 3 10 30 100 300 1000 0.4 0 -80 -40 0 40 80 120 160 10 Case temperature Tc (°C) Collector-emitter voltage VCE (V) 4 2003-03-18 GT8G131 Switching Time – RG 20 Common emitter VCE = 300 V VGE = 4 V 10 IC = 150 A Tc = 25°C 5 toff 500 Common emitter VCE = 300 V 400 RL = 2.0 W Tc = 25°C VCE, VGE – QG 10 (V) 8 VCE Collector-emitter voltage Switching time 300 6 3 200 VGE 4 tf ton 1 10 tr 100 VCE 2 30 50 100 300 0 0 20 40 60 0 80 Gate resistance RG (9) Gate charge QG (nC) Switching Time – IC 10 800 Maximum Operating Area (ms) 3 toff tf (mF) 600 Switching time 1 ton Main capacitance CM 400 tr 0.3 Common emitter VCE = 300 V VGE = 4 V RG = 51 W Tc = 25°C VCM = 350 V 200 Tc < 70°C = VGE = 4 V 20 W < RG < 200 W = = 0 0.1 0 50 100 150 200 0 40 80 120 160 200 Collector current IC (A) Peak collector current ICP (A) Minimum Gate Drive Area 200 (A) 160 ICP Tc = 25°C 120 70°C 80 Peak collector current 40 0 0 2 4 6 8 Gate-emitter voltage VGE (V) 5 2003-03-18 Gate-emitter voltage VGE (ms) (V) GT8G131 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2003-03-18